1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDS 25 Vdc
Drain–Gate Voltage VDG 25 Vdc
Gate–Source Voltage VGS –25 Vdc
Gate Current IG10 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Junction Temperature Range TJ125 °C
Storage Temperature Range Tstg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –10 µAdc, VDS = 0) V(BR)GSS –25 — Vdc
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
IGSS —
—–2.0
–2.0 nAdc
µAdc
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 2.0 nAdc) VGS(off) —–8.0 Vdc
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.2 mAdc) VGS –0.5 –7.5 Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0 Vdc) IDSS 2.0 20 mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
yfs2000
1600 7500
—
m
mhos
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yis) — 800
m
mhos
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yos) — 200
m
mhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss —7.0 pF
Reverse T ransfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss —3.0 pF
1. Pulse Test; Pulse Width
v
630 ms, Duty Cycle
v
10%.
Order this document
by MPF102/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
123
Motorola, Inc. 1997
1 DRAIN
2 SOURCE
3
GATE
MPF102
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PG, POWER GAIN (dB)
POWER GAIN
2.0 ID, DRAIN CURRENT (mA)
Figure 1. Effects of Drain Current
4.0
24
8.0
12
16
20
0 4.0 6.0 8.0 10 12 14
f = 100 MHz
400 MHz
Tchannel = 25
°
C
VDS = 15 Vdc
VGS = 0 V
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
*L1 17 turns, (approx. — depends upon circuit layout) A WG #28
enameled copper wire, close wound on 9/32″ ceramic coil
form. T uning provided by a powdered iron slug.
*L2 4–1/2 turns, A WG #18 enameled copper wire, 5/16″ long,
3/8″ I.D. (AIR CORE).
*L3 3–1/2 turns, A WG #18 enameled copper wire, 1/4″ long,
3/8″ I.D. (AIR CORE).
**L1 6 turns, (approx. — depends upon circuit layout) A WG #24
enameled copper wire, close wound on 7/32″ ceramic coil
form. T uning provided by an aluminum slug.
**L2 1 turn, AWG #16 enameled copper wire, 3/8″ I.D.
(AIR CORE).
**L3 1/2 turn, A WG #16 enameled copper wire, 1/4″ I.D.
(AIR CORE).
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
NOTE: The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Reference
Designation VALUE
100 MHz 400 MHz
C1 7.0 pF 1.8 pF
C2 1000 pF 17 pF
C3 3.0 pF 1.0 pF
C4 1–12 pF 0.8–8.0 pF
C5 1–12 pF 0.8–8.0 pF
C6 0.0015 µF 0.001 µF
C7 0.0015 µF 0.001 µF
L1 3.0 µH* 0.2 µH**
L2 0.15 µH* 0.03 µH**
L3 0.14 µH* 0.022 µH**
INPUT
TO 50
Ω
SOURCE
NEUTRALIZING
COIL L1
C5
L3Rg
′
C1
C6
C4 L2
C3
TO 500
Ω
LOAD
CASE
C7
COMMON ID = 5.0 mA
VGS VDS
+15 V
C2
MPF102
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NF, NOISE FIGURE (dB)
2.0 VDS, DRAIN–SOURCE VOLT AGE (VOLTS)
0
10
2.0
4.0
6.0
8.0
0 4.0 6.0 8.0 10 12 14
ID = 5.0 mA
100 MHz
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
NF, NOISE FIGURE (dB)
2.0 ID, DRAIN CURRENT (mA)
1.5
6.5
2.5
3.5
4.5
5.5
0 4.0 6.0 8.0 10 12 14
Figure 3. Effects of Drain–Source Voltage Figure 4. Effects of Drain Current
NOISE FIGURE
(Tchannel = 25°C)
Pin, INPUT POWER PER TONE (dB)
+40
Figure 5. Third Order Intermodulation Distortion
P , OUTPUT POWER PER TONE (dB)
out
16 18 20
f = 400 MHz f = 400 MHz
100 MHz
VDS = 15 V
VGS = 0 V
+20
0
–20
–40
–60
–80
–100
–120
–140
–160
–120 –100 –80 –60 –40 –20 0 +20
3RD ORDER INTERCEPT
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
3RD ORDER IMD
OUTPUT @ IDSS,
0.25 IDSS
INTERMODULATION CHARACTERISTICS
MPF102
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
f, FREQUENCY (MHz)
30
10
bis @ IDSS
f, FREQUENCY (MHz)
5.0
Figure 6. Input Admittance (yis) Figure 7. Reverse Transfer Admittance (yrs)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 8. Forward Transadmittance (yfs) Figure 9. Output Admittance (yos)
gis, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
bis, INPUT SUSCEPTANCE (mmhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|bfs|, FORWARD SUSCEPTANCE (mmhos)
grs, REVERSE TRANSADMITTANCE (mmhos)
brs, REVERSE SUSCEPTANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
3.0
0.05
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000 0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10 20 30 50 70 100 200 300 500 700 1000
bis @ 0.25 IDSS
gis @ IDSS
gis @ 0.25 IDSS
brs @ IDSS
0.25 IDSS
grs @ IDSS, 0.25 IDSS
gfs @ IDSS
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
gfs @ 0.25 IDSS
MPF102
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 10. S11s Figure 11. S12s
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900 900
800
700
600
500
400
300
200
100
800 700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100
200
300
400
600 700
800 900
500
ID = IDSS, 0.25 IDSS
900
500
800
700
600
500
400 300 200
100
ID = 0.25 IDSS
ID = IDSS 100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100 ID = 0.25 IDSS
ID = IDSS 900
100 500
700
300
400
500
600
700
800
Figure 12. S21s Figure 13. S22s
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
MPF102
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
f, FREQUENCY (MHz)
10
gig @ IDSS
f, FREQUENCY (MHz)
0.5
Figure 14. Input Admittance (yig) Figure 15. Reverse Transfer Admittance (yrg)
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 16. Forward Transfer Admittance (yfg) Figure 17. Output Admittance (yog)
gig, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
big, INPUT SUSCEPTANCE (mmhos)
gfg, FORWARD TRANSCONDUCTANCE (mmhos)
bfg, FORWARD SUSCEPTANCE (mmhos)
grg, REVERSE TRANSADMITTANCE (mmhos)
brg, REVERSE SUSCEPT ANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
0.3
0.01
0.1
0.2
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000 0.01
0.02
0.03
0.3
10 20 30 50 70 100 200 300 500 700 1000
big @ 0.25 IDSS
big @ IDSS
grg @ 0.25 IDSS
gfg @ IDSS
gfg @ 0.25 IDSS
brg @ 0.25 IDSS
bog @ IDSS, 0.25 IDSS
gog @ IDSS
gog @ 0.25 IDSS
0.2 0.005
0.007
0.02
0.03
0.05
0.07
0.1
0.05
0.07
0.1
0.2
0.5
0.7
1.0
brg @ IDSS
0.25 IDSS
gig @ IDSS, 0.25 IDSS
bfg @ IDSS
MPF102
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
0
°
350
°
340
°
330
°
10
°
20
°
30
°
180
°
190
°
200
°
210
°
170
°
160
°
150
°
320
°
310
°
300
°
290
°
280
°
270
°
260
°
250
°
240
°
230
°
220
°
40
°
50
°
60
°
70
°
80
°
90
°
100
°
110
°
120
°
130
°
140
°
Figure 18. S11g Figure 19. S12g
Figure 20. S21g Figure 21. S22g
0.7
0.6
0.5
0.4
0.3
0.04
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.03
0.02
0.01
0.0
0.01
0.02
0.03
0.04
0.1
900
900
800
700
600
500
300
200
100
800
700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100 200 300 400500600
700
800
900
900
600
700
800
ID = 0.25 IDSS
ID = IDSS
100
900
100
900
ID = 0.25 IDSS
ID = IDSS
1.5
100 400 500
600 700
800 900
ID = IDSS, 0.25 IDSS
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
MPF102
8 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
ISSUE AD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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MPF102/D
◊
