Order this document by MPF102/D SEMICONDUCTOR TECHNICAL DATA N-Channel -- Depletion 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain - Source Voltage Rating VDS 25 Vdc Drain - Gate Voltage VDG 25 Vdc Gate - Source Voltage VGS - 25 Vdc Gate Current IG 10 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 350 2.8 mW mW/C Junction Temperature Range TJ 125 C Storage Temperature Range Tstg - 65 to +150 C 1 2 3 CASE 29-04, STYLE 5 TO-92 (TO-226AA) ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)GSS - 25 -- Vdc -- -- -2.0 - 2.0 nAdc Adc OFF CHARACTERISTICS Gate - Source Breakdown Voltage (IG = -10 Adc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc, VDS = 0) (VGS = -15 Vdc, VDS = 0, TA = 100C) IGSS Gate - Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nAdc) VGS(off) -- - 8.0 Vdc Gate - Source Voltage (VDS = 15 Vdc, ID = 0.2 mAdc) VGS -0.5 -7.5 Vdc IDSS 2.0 20 mAdc 2000 1600 7500 -- ON CHARACTERISTICS Zero - Gate -Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0 Vdc) SMALL- SIGNAL CHARACTERISTICS Forward Transfer Admittance(1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) yfs Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yis) -- 800 mmhos Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yos) -- 200 mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 7.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 3.0 pF 1. Pulse Test; Pulse Width mmhos v 630 ms, Duty Cycle v 10%. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 MPF102 POWER GAIN 24 f = 100 MHz PG , POWER GAIN (dB) 20 16 12 400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 8.0 4.0 2.0 0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14 Figure 1. Effects of Drain Current Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C2 L1 C4 C5 Rg Adjust VGS for ID = 50 mA VGS < 0 Volts *L2 *L3 TO 500 LOAD L2 CASE L3 C6 C7 VGS *L1 C3 C1 NOTE: COMMON VDS +15 V ID = 5.0 mA The noise source is a hot-cold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). 17 turns, (approx. -- depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 4-1/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 3-1/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE). **L1 **L2 **L3 VALUE 100 MHz 400 MHz C1 7.0 pF 1.8 pF C2 1000 pF 17 pF C3 3.0 pF 1.0 pF C4 1-12 pF 0.8-8.0 pF C5 1-12 pF 0.8-8.0 pF C6 0.0015 F 0.001 F C7 0.0015 F 0.001 F L1 3.0 H* 0.2 H** L2 0.15 H* 0.03 H** L3 0.14 H* 0.022 H** 6 turns, (approx. -- depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE). Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPF102 NOISE FIGURE (Tchannel = 25C) 10 6.5 ID = 5.0 mA VDS = 15 V VGS = 0 V 5.5 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8.0 6.0 f = 400 MHz 4.0 2.0 4.5 f = 400 MHz 3.5 2.5 100 MHz 0 100 MHz 1.5 0 2.0 4.0 6.0 8.0 10 12 14 16 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 18 0 20 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 2.0 Figure 3. Effects of Drain-Source Voltage 12 14 Figure 4. Effects of Drain Current INTERMODULATION CHARACTERISTICS Pout , OUTPUT POWER PER TONE (dB) + 40 3RD ORDER INTERCEPT + 20 VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 0 - 20 - 40 - 60 - 80 - 100 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS - 120 - 140 - 160 - 120 - 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS - 80 - 60 - 40 - 20 Pin, INPUT POWER PER TONE (dB) 0 + 20 Figure 5. Third Order Intermodulation Distortion Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MPF102 COMMON SOURCE CHARACTERISTICS 30 20 grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) bis @ IDSS 10 7.0 5.0 3.0 gis @ IDSS 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 bis @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 gfs @ IDSS gfs @ 0.25 IDSS 3.0 2.0 1.0 0.7 0.5 |bfs| @ IDSS |bfs| @ 0.25 IDSS 500 700 1000 5.0 bos @ IDSS and 0.25 IDSS 2.0 1.0 0.5 0.2 gos @ IDSS 0.1 0.05 gos @ 0.25 IDSS 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 8. Forward Transadmittance (yfs) 4 50 70 100 200 300 f, FREQUENCY (MHz) 10 10 7.0 5.0 0.3 0.2 10 30 Figure 7. Reverse Transfer Admittance (yrs) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) Figure 6. Input Admittance (yis) 20 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 9. Output Admittance (yos) Motorola Small-Signal Transistors, FETs and Diodes Device Data MPF102 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 1.0 40 350 100 340 330 320 40 310 50 20 10 330 0.4 320 310 ID = IDSS, 0.25 IDSS 300 0.8 900 500 ID = IDSS 60 800 300 400 60 500 0.7 600 0.6 300 0.1 500 70 290 400 700 800 700 800 290 0.2 700 600 600 90 340 0.3 400 80 350 300 200 50 70 0 200 100 0.9 30 ID = 0.25 IDSS 280 80 300 280 0.0 200 900 270 90 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 900 150 160 170 180 190 200 210 150 160 Figure 10. S11s 30 20 10 0 350 170 340 330 30 20 10 80 90 700 110 0.4 800 600 100 210 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 310 50 300 60 290 70 280 80 270 90 270 260 100 260 250 110 250 240 120 240 230 130 230 220 140 220 320 310 300 0.7 290 900 700 600 200 40 0.5 60 900 190 320 0.6 50 800 180 Figure 11. S12s 40 70 270 100 500 0.3 ID = 0.25 IDSS 500 0.3 100 400 400 280 0.6 300 200 0.4 100 0.5 300 120 ID = IDSS 200 130 0.6 140 150 160 170 180 190 200 210 Figure 12. S21s Motorola Small-Signal Transistors, FETs and Diodes Device Data 150 160 170 180 190 200 210 Figure 13. S22s 5 MPF102 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 10 7.0 5.0 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 20 gig @ IDSS 3.0 grg @ 0.25 IDSS 2.0 1.0 0.7 0.5 big @ IDSS big @ 0.25 IDSS 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.5 0.3 brg @ IDSS 0.2 0.1 0.07 0.05 0.25 IDSS 0.03 0.02 0.01 0.007 0.005 gig @ IDSS, 0.25 IDSS 10 10 7.0 5.0 gfg @ IDSS 3.0 gfg @ 0.25 IDSS 2.0 1.0 0.7 0.5 bfg @ IDSS 0.3 brg @ 0.25 IDSS 0.2 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 1.0 0.7 0.5 bog @ IDSS, 0.25 IDSS 0.3 0.2 0.1 0.07 0.05 gog @ IDSS 0.03 0.02 gog @ 0.25 IDSS 0.1 0.01 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 16. Forward Transfer Admittance (yfg) 6 30 Figure 15. Reverse Transfer Admittance (yrg) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) Figure 14. Input Admittance (yig) 20 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 17. Output Admittance (yog) Motorola Small-Signal Transistors, FETs and Diodes Device Data MPF102 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 20 10 0 350 340 330 30 0.7 40 100 310 50 300 60 290 70 280 80 0 350 340 330 320 0.04 200 300 0.03 400 100 500 200 0.5 ID = IDSS 0.4 310 600 300 60 70 40 10 ID = 0.25 IDSS 0.6 50 320 20 0.02 700 400 500 300 800 600 900 0.01 290 700 80 800 0.3 900 90 270 100 260 90 250 270 500 600 100 ID = IDSS 110 280 0.0 100 110 700 600 700 260 ID = 0.25 IDSS 250 0.01 800 120 240 120 240 800 0.02 900 130 230 130 230 900 140 220 150 160 170 180 190 200 140 210 20 10 0 350 150 160 170 340 330 30 320 20 10 40 0 1.5 1.0 100 100 0.4 50 180 190 200 210 340 330 Figure 19. S12g 0.5 40 220 0.04 Figure 18. S11g 30 0.03 ID = IDSS 350 300 200 500 320 400 700 600 800 0.9 900 310 50 300 60 290 70 280 80 270 90 270 100 260 100 260 110 250 110 250 120 240 120 240 130 230 130 230 140 220 140 220 100 ID = IDSS, 0.25 IDSS 0.3 0.8 60 0.2 70 310 ID = 0.25 IDSS 80 0.1 300 0.7 290 280 0.6 900 90 900 150 160 170 180 190 200 210 Figure 20. S21g Motorola Small-Signal Transistors, FETs and Diodes Device Data 150 160 170 180 190 200 210 Figure 21. S22g 7 MPF102 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D X X G J H V C SECTION X-X 1 N N CASE 029-04 (TO-226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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