MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series Zener Voltage Regulators 500 mW SOD-123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless 34-package style. http://onsemi.com Features * * * * * * * * * 500 mW Rating on FR-4 or FR-5 Board Wide Zener Reverse Voltage Range - 1.8 V to 43 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power - 225 W (8 x 20 ms) AEC-Q101 Qualified and PPAP Capable SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available 1 Cathode 2 1 1 xxx M G G xxx = Device Code (Refer to page 2) M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V-0 ORDERING INFORMATION MAXIMUM RATINGS Rating SOD-123 CASE 425 STYLE 1 MARKING DIAGRAM Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260C for 10 Seconds 2 Anode Symbol Max Unit Peak Power Dissipation @ 20 ms (Note 1) @ TL 25C Ppk 225 W Total Power Dissipation on FR-5 Board, (Note 2) @ TL = 75C Derated above 75C PD 500 6.7 mW mW/C Package Shipping MMSZ4xxxET1 SOD-123 3000 / Tape & Reel MMSZ4xxxET1G SOD-123 (Pb-Free) 3000 / Tape & Reel Device Thermal Resistance, (Note 3) Junction-to-Ambient RqJA 340 C/W SZMMSZ4xxxET1G SOD-123 (Pb-Free) 3000 / Tape & Reel Thermal Resistance, (Note 3) Junction-to-Lead RqJL 150 C/W MMSZ4xxxET3 SOD-123 10000 / Tape & Reel TJ, Tstg -55 to +150 C MMSZ4xxxET3G SOD-123 (Pb-Free) 10000 / Tape & Reel Junction and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Nonrepetitive current pulse per Figure 11. 2. FR-5 = 3.5 x 1.5 inches, using the minimum recommended footprint. 3. Thermal Resistance measurement obtained via infrared Scan Method. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 5 1 Publication Order Number: MMSZ4678ET1/D MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless I otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ VR V IR VF IZT Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Zener Voltage (Note 1) VZ (V) Leakage Current @ IZT IR @ VR Device Marking Min Nom Max mA mA V SZ/MMSZ4680ET1, G CF8 2.09 2.2 2.31 50 4 1 MMSZ4684ET1 CG3 3.13 3.3 3.47 50 7.5 1.5 MMSZ4688ET1, G CG7 4.47 4.7 4.94 50 10 3 SZ/MMSZ4689ET1, G CG8 4.85 5.1 5.36 50 10 3 MMSZ4690ET1 CG9 5.32 5.6 5.88 50 10 4 MMSZ4691ET1 CH1 5.89 6.2 6.51 50 10 5 MMSZ4692ET1 CH2 6.46 6.8 7.14 50 10 5.1 MMSZ4693ET1 CH3 7.13 7.5 7.88 50 10 5.7 MMSZ4697ET1 CH7 9.50 10 10.50 50 1 7.6 MMSZ4699ET1 CH9 11.40 12 12.60 50 0.05 9.1 SZ/MMSZ4701ET1, G CJ2 13.3 14 14.7 50 0.05 10.6 MMSZ4702ET1, G CJ3 14.25 15 15.75 50 0.05 11.4 MMSZ4703ET1 CJ4 15.20 16 16.80 50 0.05 12.1 MMSZ4705ET1 CJ6 17.10 18 18.90 50 0.05 13.6 MMSZ4709ET1 CK1 22.80 24 25.20 50 0.01 18.2 MMSZ4711ET1 CK3 25.65 27 28.35 50 0.01 20.4 MMSZ4717ET1 CK9 40.85 43 45.15 50 0.01 32.6 Device* 1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C. *The "G'' suffix indicates Pb-Free package available. http://onsemi.com 2 MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series 8 100 7 VZ, TEMPERATURE COEFFICIENT (mV/C) VZ, TEMPERATURE COEFFICIENT (mV/C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 11 10 10 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range - 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range - 55C to +150C) 1000 1.0 PD versus TL 0.8 0.6 100 PD versus TA 0.4 0.2 0 25 50 75 100 T, TEMPERATURE (C) RECTANGULAR WAVEFORM, TA = 25C 125 10 1 150 0.1 Figure 3. Steady State Power Derating 1 1000 1000 TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) IZ = 1 mA 100 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) 100 5 mA 20 mA 10 10 150C 1 10 100 PW, PULSE WIDTH (ms) Figure 4. Maximum Nonrepetitive Surge Power 1000 Z ZT, DYNAMIC IMPEDANCE ( ) 100 VZ, NOMINAL ZENER VOLTAGE (V) Ppk , PEAK SURGE POWER (WATTS) PD, POWER DISSIPATION (WATTS) VZ @ IZT 1 12 1.2 0 TYPICAL TC VALUES 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 5. Effect of Zener Voltage on Zener Impedance 0.5 75C 25C 0C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 6. Typical Forward Voltage http://onsemi.com 3 1.1 1.2 MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT ( m A) TA = 25C 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150C 0.1 0.01 0.001 + 25C 0.0001 -55C 0.00001 0 10 Figure 7. Typical Capacitance Figure 8. Typical Leakage Current I Z, ZENER CURRENT (mA) TA = 25C 10 1 0.1 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 TA = 25C 10 1 0.1 0.01 12 100 30 50 70 VZ, ZENER VOLTAGE (V) PEAK VALUE IRSM @ 8 ms tr 90 10 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 50 HALF VALUE IRSM/2 @ 20 ms 40 30 tP 20 10 0 0 90 Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) % OF PEAK PULSE CURRENT I Z, ZENER CURRENT (mA) 80 100 100 0.01 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 20 40 60 t, TIME (ms) Figure 11. 8 x 20 ms Pulse Waveform http://onsemi.com 4 80 90 MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE G D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 AAAA AAAA 1 HE DIM A A1 b c D E HE L q E 2 MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0 INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 STYLE 1: PIN 1. CATHODE 2. ANODE q L b MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 0 C SOLDERING FOOTPRINT* EE EE EE 0.91 0.036 2.36 0.093 4.19 0.165 EE EE EE SCALE 10:1 1.22 0.048 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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