© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 5
1Publication Order Number:
MMSZ4678ET1/D
MMSZ4xxxET1 Series,
SZMMSZ4xxxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
•500 mW Rating on FR−4 or FR−5 Board
•Wide Zener Reverse Voltage Range − 1.8 V to 43 V
•Package Designed for Optimal Automated Board Assembly
•Small Package Size for High Density Applications
•ESD Rating of Class 3 (>16 kV) per Human Body Model
•Peak Power − 225 W (8 x 20 ms)
•AEC−Q101 Qualified and PPAP Capable
•SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ≤ 25°C
Ppk 225 W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TL = 75°C
Derated above 75°C
PD
500
6.7
mW
mW/°C
Thermal Resistance, (Note 3)
Junction−to−Ambient
RqJA 340 °C/W
Thermal Resistance, (Note 3)
Junction−to−Lead
RqJL 150 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
1
2
http://onsemi.com
MARKING DIAGRAM
xxx = Device Code (Refer to page 2)
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
xxx M G
G
1
Device Package Shipping†
ORDERING INFORMATION
MMSZ4xxxET1 SOD−123 3000 / Tape &
Reel
MMSZ4xxxET3 SOD−123 10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMSZ4xxxET1G SOD−123
(Pb−Free)
3000 / Tape &
Reel
MMSZ4xxxET3G SOD−123
(Pb−Free)
10000 / Tape &
Reel
SZMMSZ4xxxET1G SOD−123
(Pb−Free)
3000 / Tape &
Reel
MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IF
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Device*
Device
Marking
Zener Voltage (Note 1) Leakage Current
VZ (V) @ IZT IR @ VR
Min Nom Max mAmAV
SZ/MMSZ4680ET1, G CF8 2.09 2.2 2.31 50 4 1
MMSZ4684ET1 CG3 3.13 3.3 3.47 50 7.5 1.5
MMSZ4688ET1, G CG7 4.47 4.7 4.94 50 10 3
SZ/MMSZ4689ET1, G CG8 4.85 5.1 5.36 50 10 3
MMSZ4690ET1 CG9 5.32 5.6 5.88 50 10 4
MMSZ4691ET1 CH1 5.89 6.2 6.51 50 10 5
MMSZ4692ET1 CH2 6.46 6.8 7.14 50 10 5.1
MMSZ4693ET1 CH3 7.13 7.5 7.88 50 10 5.7
MMSZ4697ET1 CH7 9.50 10 10.50 50 1 7.6
MMSZ4699ET1 CH9 11.40 12 12.60 50 0.05 9.1
SZ/MMSZ4701ET1, G CJ2 13.3 14 14.7 50 0.05 10.6
MMSZ4702ET1, G CJ3 14.25 15 15.75 50 0.05 11.4
MMSZ4703ET1 CJ4 15.20 16 16.80 50 0.05 12.1
MMSZ4705ET1 CJ6 17.10 18 18.90 50 0.05 13.6
MMSZ4709ET1 CK1 22.80 24 25.20 50 0.01 18.2
MMSZ4711ET1 CK3 25.65 27 28.35 50 0.01 20.4
MMSZ4717ET1 CK9 40.85 43 45.15 50 0.01 32.6
1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C.
*The “G’’ suffix indicates Pb−Free package available.
MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
VZ, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
VZ @ IZT
VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
VZ @ IZT
1.2
1.0
0.8
0.6
0.4
0.2
01501251007550250
T, TEMPERATURE (°C)
Figure 3. Steady State Power Derating
PD versus TA
PD versus TL
Ppk, PEAK SURGE POWER (WATTS)
0.1
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1 10 100 1000
1000
100
10
1
RECTANGULAR
WAVEFORM, TA = 25°C
100
VZ, NOMINAL ZENER VOLTAGE
Figure 5. Effect of Zener Voltage on
Zener Impedance
101
ZZT, DYNAMIC IMPEDANCE ( )Ω
1000
100
10
1
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF
, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
IF, FORWARD CURRENT (mA)
1000
100
10
1
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
150°C75°C 25°C 0°C
TYPICAL TC VALUES
PD, POWER DISSIPATION (WATTS)
MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
IZ, ZENER CURRENT (mA)
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.0110 30 50 70 90
TA = 25°C
IR, LEAKAGE CURRENT ( A)m
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150°C
+25°C
−55°C
IZ, ZENER CURRENT (mA)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
100
Figure 11. 8 × 20 ms Pulse Waveform
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
% OF PEAK PULSE CURRENT
PEAK VALUE IRSM @ 8 ms
MMSZ4xxxET1 Series, SZMMSZ4xxxET1G Series
http://onsemi.com
5
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
q
--- ---
q00
10 10
°°° °
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MMSZ4678ET1/D
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