BUL146G - ON Semiconductor

April, 2010 − Rev. 9

1Publication Order Number:

BUL146/D

BUL146G, BUL146FG

SWITCHMODEt NPN

Bipolar Power Transistor

For Switching Power Supply Applications

The BUL146G / BUL146FG have an applications specific

state−of−the−art die designed for use in fluorescent electric lamp

ballasts to 130 W and in Switchmode Power supplies for all types of

electronic equipment.

Features

•Improved Efficiency Due to Low Base Drive Requirements:

♦High and Flat DC Current Gain

♦Fast Switching

♦No Coil Required in Base Circuit for Turn−Off (No Current Tail)

•Full Characterization at 125°C

•Two Packages Choices: Standard TO−220 or Isolated TO−220

•Parametric Distributions are Tight and Consistent Lot−to−Lot

•BUL146F, Case 221D, is UL Recognized to 3500 VRMS: File # E69369

•These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage VCEO 400 Vdc

Collector−Base Breakdown Voltage VCES 700 Vdc

Emitter−Base Voltage VEBO 9.0 Vdc

Collector Current − Continuous

− Peak (Note 1)

ICM

6.0

Adc

Base Current − Continuous

− Peak (Note 1)

IBM

4.0

8.0

Adc

RMS Isolation Voltage (Note 2)

(for 1 sec, R.H. < 30%, TC = 25_C) VISOL1

VISOL2

VISOL3

BUL146F

4500

3500

1500

Total Device Dissipation @ TC = 25_C

BUL146

BUL146F

Derate above 25°C BUL146

BUL146F

PD100

0.8

0.32

W/_C

Operating and Storage Temperature TJ, Tstg −65 to 150 _C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

BUL146

BUL146F

RqJC 1.25

3.125

_C/W

Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W

Maximum Lead Temperature for Soldering

Purposes 1/8″ from Case for 5 Seconds

TL260 _C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

2. Proper strike and creepage distance must be provided.

POWER TRANSISTOR

8.0 AMPERES

1000 VOLTS

45 and 125 WATTS

TO−220AB

CASE 221A−09

STYLE 1

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MARKING

DIAGRAMS

G = Pb−Free Package

A = Assembly Location

Y = Year

WW = Work Week

BUL146G

AYWW

See detailed ordering and shipping information in the package

dimensions section on page 8 of this data sheet.

ORDERING INFORMATION

TO−220 FULLPACK

CASE 221D

STYLE 2

UL RECOGNIZED

BUL146FG

AYWW

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

BUL146G, BUL146FG

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 − − Vdc

Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO − − 100 mAdc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

(TC = 125°C)

Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C)

ICES −

−

100

500

100

mAdc

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) IEBO − − 100 mAdc

ON CHARACTERISTICS

Base−Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)

Base−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)

VBE(sat) −

−

0.82

0.93

1.1

1.25

Vdc

Collector−Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)

(TC = 125°C)

Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)

(TC = 125°C)

VCE(sat) −

−

0.22

0.20

0.30

0.5

0.7

Vdc

DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc)

(TC = 125°C)

DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc)

(TC = 125°C)

DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc)

(TC = 125°C)

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

hFE 14

−

8.0

7.0

−

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT−14 −MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) COB −95 150 pF

Input Capacitance (VEB = 8.0 V) CIB −1000 1500 pF

Dynamic Saturation Voltage:

Determined 1.0 ms and

3.0 ms respectively after

rising IB1 reaches 90% of

final IB1

(see Figure 18)

(IC = 1.3 Adc

IB1 = 300 mAdc

VCC = 300 V)

1.0 ms(TC = 125°C)

VCE(dsat)

−

2.5

6.5

−

3.0 ms(TC = 125°C)

−

0.6

2.5

−

(IC = 3.0 Adc

IB1 = 0.6 Adc

VCC = 300 V)

1.0 ms(TC = 125°C)

−

3.0

7.0

−

3.0 ms(TC = 125°C)

−

0.75

1.4

−

BUL146G, BUL146FG

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (continued)

Characteristic Symbol Min Typ Max Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)

Turn−On Time (IC = 1.3 Adc, IB1 = 0.13 Adc

IB2 = 0.65 Adc, VCC = 300 V) (TC = 125°C)

ton −

−

100

200

−

Turn−Off Time

(TC = 125°C)

toff −

−

1.35

1.90

2.5

−

Turn−On Time (IC = 3.0 Adc, IB1 = 0.6 Adc

IB1 = 1.5 Adc, VCC = 300 V) (TC = 125°C)

ton −

−

100

150

−

Turn−Off Time

(TC = 125°C)

toff −

−

1.7

2.1

2.5

−

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)

Fall Time (IC = 1.3 Adc, IB1 = 0.13 Adc

IB2 = 0.65 Adc) (TC = 125°C)

tfi −

−

115

120

200

−

Storage Time

(TC = 125°C)

tsi −

−

1.35

1.75

2.5

−

Crossover Time

(TC = 125°C)

tc−

−

200

210

350

−

Fall Time (IC = 3.0 Adc, IB1 = 0.6 Adc

IB2 = 1.5 Adc) (TC = 125°C)

tfi −

−

100

150

−

Storage Time

(TC = 125°C)

tsi −

−

1.75

2.25

2.5

−

Crossover Time

(TC = 125°C)

tc−

−

175

200

300

−

Fall Time (IC = 3.0 Adc, IB1 = 0.6 Adc

IB2 = 0.6 Adc) (TC = 125°C)

tfi 80

−

210

180

−

Storage Time

(TC = 125°C)

tsi 2.6

−

4.5

3.8

−

Crossover Time

(TC = 125°C)

tc−

−

230

400

350

−

BUL146G, BUL146FG

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hFE , DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

C, CAPACITANCE (pF)

0.01

100

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

hFE , DC CURRENT GAIN

Figure 2. DC Current Gain @ 5 Volts

VCE, VOLTAGE (V)

Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage

Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance

110

100

0.01 0.1 1 10

0.01

IB, BASE CURRENT (mA)

0.01

IC COLLECTOR CURRENT (AMPS)

0.1

1.2

0.8

0.4

0.01

IC, COLLECTOR CURRENT (AMPS)

0.1 1 10

1000

100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1 1000

0.1

110

10000

0.1

0.1 1 10

10 100

TJ = 25°C

TJ = -20°C

VCE = 1 V TJ = 125°C

TJ = 25°C

TJ = -20°C

VCE = 5 V

IC = 1 A 2 A 3 A

VCE, VOLTAGE (V)

IC/IB = 10

IC/IB = 5 TJ = 25°C

TJ = 125°C

VBE, VOLTAGE (V)

1.1

0.9

0.7

0.6

TJ = 25°C

TJ = 125°CIC/IB = 5

IC/IB = 10

5 A 6 A

TJ = 25°C

0.5

TYPICAL STATIC CHARACTERISTICS

TJ = 25°C

f = 1 MHz

Cob

Cib

BUL146G, BUL146FG

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IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, ton

IC COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

1000

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Resistive Switching, toff

t, TIME (ns)

Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE)

Figure 11. Inductive Switching, tc and tfi

IC/IB = 5

Figure 12. Inductive Switching, tc and tfi

IC/IB = 10

800

4000

2000

2500

hFE, FORCED GAIN

250

IC, COLLECTOR CURRENT (AMPS)

478

200

150

1500

067

250

100

258

TJ = 25°C

IB(off) = IC/2

VCC = 300 V

PW = 20 msIC/IB = 5

tsi, STORAGE TIME (ns)

IC = 3 A

IC = 1.3 A

200

150

100

600

400

200

IC/IB = 5

IC/IB = 10

IB(off) = IC/2

VCC = 300 V

PW = 20 ms

IC/IB = 10

04826

500

1000

1500

2500

3000

3500

t, TIME (ns)

13467

500

1000

2000

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 mH

TJ = 25°C

TJ = 125°C

4000

2000

500

1000

1500

2500

3000

3500

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 mH

123 56

t, TIME (ns)

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 mH

TJ = 25°C

TJ = 125°C

tfi

047812 3 56

t, TIME (ns)

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 mH

tfi

TJ = 25°C

TJ = 125°C

IC/IB = 10

IC/IB = 5

TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = 125°C

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

BUL146G, BUL146FG

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IC, COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

hFE, FORCED GAIN

TC, CROSS-OVER TIME (ns)

130

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

Tfi , FALL TIME (ns)

Figure 14. Inductive Cross−Over Time

IC, COLLECTOR CURRENT (AMPS)

Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area

Figure 17. Forward Bias Power Derating

110

515

250

150

100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0 200

1,0

0,8

0,2

0,0

TC, CASE TEMPERATURE (°C)

80 140 160

0.01

600 800

100 1000

DC (BUL146)

5 ms

VBE(off)

TC ≤ 125°C

IC/IB ≥ 4

LC = 500 mH

POWER DERATING FACTOR

0,6

0,4

67891011121314

100

120

IC = 3 A

IC = 1.3 A

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 mH

TJ = 25°C

TJ = 125°C

35 154 67891011121314

200

100

IC = 3 A

IC = 1.3 A

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 mH

TJ = 25°C

TJ = 125°C

0.1

1 ms 10 ms1 ms

400

0 V -1, 5 V

-5 V

40 60 100 120

SECOND BREAKDOWN

DERATING

THERMAL DERATING

GUARANTEED SAFE OPERATING AREA INFORMATION

There are two limitations on the power handling ability of a tran-

sistor: average junction temperature and second breakdown. Safe

operating area curves indicate IC−VCE limits of the transistor that

must be observed for reliable operation; i.e., the transistor must not

be subjected to greater dissipation than the curves indicate. The data

of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on

power level. Second breakdown pulse limits are valid for duty

cycles to 10% but must be derated when TC > 25°C. Second break-

down limitations do not derate the same as thermal limitations. Al-

lowable current at the voltages shown in Figure 15 may be found at

any case temperature by using the appropriate curve on Figure 17.

TJ(pk) may be calculated from the data in Figure 20. At any case tem-

peratures, thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by second break-

down. For inductive loads, high voltage and current must be sus-

tained simultaneously during turn−off with the base−to−emitter

junction reverse−biased. The safe level is specified as a reverse−

biased safe operating area (Figure 16). This rating is verified under

clamped conditions so that the device is never subjected to an ava-

lanche mode.

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

EXTENDED

SOA

BUL146G, BUL146FG

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-5

-4

-3

-2

-1

012345678

Figure 18. Dynamic Saturation Voltage Measurements

TIME

VCE

VOLTS

Figure 19. Inductive Switching Measurements

1 ms

3 ms

90% IB

dyn 1 ms

dyn 3 ms

012 34567 8

TIME

tsi

VCLAMP 10% VCLAMP

90% IB1

10% IC

90% IC

tfi

Table 1. Inductive Load Switching Drive Circuit

+15 V

1 mF

150 W

3 W

100 W

3 W

MPF930

+10 V

50 W

COMMON

-Voff

500 mF

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150 W

3 W

100 mF

Iout

1 mF

IC PEAK

VCE PEAK

VCE

IB1

IB2

V(BR)CEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 VOLTS

IC(pk) = 100 mA

INDUCTIVE SWITCHING

L = 200 mH

RB2 = 0

VCC = 15 VOLTS

RB1 SELECTED FOR

DESIRED IB1

RBSOA

L = 500 mH

RB2 = 0

VCC = 15 VOLTS

RB1 SELECTED

FOR DESIRED IB1

RB2

RB1

BUL146G, BUL146FG

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0.01

t, TIME (ms)

Figure 20. Typical Thermal Response (ZqJC(t)) for BUL146

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.2

0.02

0.1

D = 0.5

SINGLE PULSE

0.01 0.1 1 10 100 1000

0.1

0.05

TYPICAL THERMAL RESPONSE

RqJC(t) = r(t) RqJC

RqJC = 3.125°C/W MAX

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.01

t, TIME (ms)

Figure 21. Typical Thermal Response for BUL146F

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.2

0.1

0.01 0.10 1.00 10.00 100.00 1000

0.10

1.00

0.02

0.05

SINGLE PULSE

D = 0.5

ORDERING INFORMATION

Device Package Shipping

BUL146G TO−220AB

(Pb−Free)

50 Units / Rail

BUL146FG TO−220 (Fullpack)

(Pb−Free)

50 Units / Rail

BUL146G, BUL146FG

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MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110″ MIN

Figure 22a. Screw or Clip Mounting

Position for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

CLIP

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

CLIP 0.099″MIN

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.099″ MIN

Figure 22b. Clip Mounting Position

for Isolation Test Number 2

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

TEST CONDITIONS FOR ISOLATION TESTS*

4-40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a

screw torque of 6 to 8 in .lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain

a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in .lbs will

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in .lbs without adversely affecting the

package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recom-

mend exceeding 10 in .lbs of mounting torque under any mounting conditions.

Figure 23. Typical Mounting Techniques

for Isolated Package

Figure 23a. Screw−Mounted Figure 23b. Clip−Mounted

MOUNTING INFORMATION**

** For more information about mounting power semiconductors see Application Note AN1040.

BUL146G, BUL146FG

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PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AF

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

TO−220 FULLPAK

CASE 221D−03

ISSUE G

DIM

MIN MAX MIN MAX

MILLIMETERS

0.625 0.635 15.88 16.12

INCHES

B0.408 0.418 10.37 10.63

C0.180 0.190 4.57 4.83

D0.026 0.031 0.65 0.78

F0.116 0.119 2.95 3.02

G0.100 BSC 2.54 BSC

H0.125 0.135 3.18 3.43

J0.018 0.025 0.45 0.63

K0.530 0.540 13.47 13.73

L0.048 0.053 1.23 1.36

N0.200 BSC 5.08 BSC

Q0.124 0.128 3.15 3.25

R0.099 0.103 2.51 2.62

S0.101 0.113 2.57 2.87

U0.238 0.258 6.06 6.56

−B−

−Y−

3 PL

123

0.25 (0.010) Y

SEATING

PLANE

−T−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW

STANDARD 221D-03.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

BUL146/D

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

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