TLP621-1, TLP621-2, TLP621-4 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS z UL recognised, File No. E91231 Dimensions in mm 1 2 7.0 6.0 4 3 1.2 DESCRIPTION The TLP621-1 , TLP621-2 , TLP621-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Current Transfer Ratio ( 50% min) z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z High BVCEO ( 55Vmin ) z All electrical parameters 100% tested z Custom electrical selections available 2.54 TLP621-1 5.08 4.08 0.5 3.0 0.5 TLP621-2 7.62 4.0 3.0 0.26 3.35 2.54 APPLICATIONS z Computer terminals z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances 10.16 9.16 1 8 4 6 5 7.62 4.0 3.0 0.5 0.26 3.35 1 3 4 OPTION G 0.6 0.1 10.46 9.86 1.25 0.75 1.2 20.32 19.32 10.16 5 12 7 8 10 9 11 7.62 4.0 3.0 0.26 13 6 7.0 6.0 7.62 16 15 14 2 2.54 OPTION SM 13 Max 0.5 3.0 TLP621-4 SURFACE MOUNT 7 2 3 7.0 6.0 1.2 13 Max 13 Max 0.5 3.0 0.5 3.35 0.26 ISOCOMCOMPONENTSLTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 1/12/09 DB92652 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 5V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 55V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Output Coupled Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) MIN TYP MAX UNITS 1.0 5 1/12/09 1.3 10 Collector-emitter Breakdown (BVCEO) 55 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) 100 Current Transfer Ratio (CTR) (Note 2) TLP621-1, TLP621-2, TLP621-4 50 CTR selection available GB 100 BL 200 GR 30 Collector-emitter Saturation VoltageVCE (SAT) GB Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Rise Time tr Fall Time tf Turn-on Time ton Turn-off Time toff Note 1 Note 2 1.15 600 300 600 0.4 0.4 2 3 3 3 TEST CONDITION V V A IF = 10mA IR = 10A VR = 5V V IC = 0.5mA V nA IE = 100A VCE = 24V % % % % 5mA IF , 5V VCE V V VRMS VPK s s s s 8mA IF , 2.4mA IC 1mA IF , 0.2mA IC See note 1 See note 1 VIO = 500V (note 1) VCC =10V , IC = 2mA, RL = 100 1mA IF , 0.4V VCE Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92652 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Low Collector-emitter Voltage TA = 25C 25 Collector current IC (mA) Collector power dissipation PC (mW) 200 150 100 50 0 15 50 40 30 20 10 10 5 20 5 IF = 2mA 0 -30 0 25 50 75 100 0 125 Ambient temperature TA ( C ) 0.2 50 50 1.0 TA = 25C 30 Collector current IC (mA) 50 Forward current IF (mA) 0.8 Collector Current vs. Collector-emitter Voltage 60 40 30 20 10 0 20 40 15 30 10 20 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Current Transfer Ratio vs. Forward Current 320 0.28 0.24 Current transfer ratio CTR (%) Collector-emitter saturation voltage VCE(SAT) (V) 0.6 Collector-emitter voltage VCE ( V ) Forward Current vs. Ambient Temperature IF = 5mA IC = 1mA 0.20 0.16 0.12 0.08 0.04 280 240 200 160 120 80 VCE = 5V TA = 25C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( C ) 1/12/09 0.4 100 1 2 5 10 20 Forward current IF (mA) DB92652 50