MPSA 42
MPSA 43
Semiconductor Group 2
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Limit Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 MPSA 42
MPSA 43
V(BR)CE0 300
200 –
––
–
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0 MPSA 42
MPSA 43
V(BR)CB0 300
200 –
––
–
Emitter-base breakdown voltage
IE = 100 µA, IC = 0 V(BR)EB0 6––
Collector-base cutoff current
VCB = 200 V MPSA 42
VCB = 160 V MPSA 43
VCB = 200 V, TA = 150 °C MPSA 42
VCB = 160 V, TA = 150 °C MPSA 43
ICB0 –
–
–
–
–
–
–
–
100
100
20
20
nA
nA
µA
µA
Emitter-base cutoff current
VBE = 3 V, IC = 0 IEB0 – – 100 nA
DC current gain 1)
IC =1 mA, VCE = 10 V
IC =10 mA, VCE = 10 V
IC =30 mA, VCE = 10 V
hFE 25
40
40
–
–
–
–
–
–
–
Collector-emitter saturation voltage 1)
IC = 20 mA, IC = 2 mA MPSA 42
MPSA 43
VCEsat –
––
–0.5
0.4
V
Base-emitter saturation voltage
IC = 20 mA, IB = 2 mA VBEsat – – 0.9
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz fT– 70 – MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz MPSA 42
MPSA 43
Cobo –
––
–3
4
pF
1) Pulse test conditions: t≤ 300 µs, D≤ 2%.