HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M 600 600 V V VGS VGSM Continuous Transient 20 30 V V ID25 IDM IAR TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 26 104 26 A A A EAR EAS TC = 25C TC = 25C 45 1.5 mJ J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 10 V/ns Maximum Ratings 360 TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque (TAB) TO-268 (D3) ( IXFT) G C C C 1.13/10 Nm/lb.in. TO-247 TO-268 6 4 g g Features z z z VDSS VGS(th) Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250A Temperature Coefficient 600 VDS = VGS, ID = 4 mA Temperature Coefficient 2.5 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved TJ = 25C TJ = 125C z z Advantages V %/K z 200 nA z 25 1 A mA 0.25 4.5 - 0.24 VGS = 20 VDC, VDS = 0 z Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier V %/K 0.095 IGSS D = Drain TAB = Drain C 300 TO-247 G = Gate S = Source z Symbol (TAB) W -55 ... +150 150 -55 ... +150 TJ TJM Tstg TO-247 AD (IXFH) S TC = 25C Weight = 600 V = 26 A = 0.25 trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg PD VDSS ID25 RDS(on) z Easy to mount Space savings High power density DS98635E(04/02) IXFH 26N60Q IXFT 26N60Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 * ID25, pulse test 14 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 22 S 4700 pF 580 pF 230 pF td(on) 30 ns tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 32 ns td(off) RG = 2.0 (External), 80 ns 16 ns tf 165 Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 76 nC 0.35 TO-247 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM nC nC RthJC RthCK 200 28 0.25 K/W K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 26 A Repetitive; pulse width limited by TJM 104 A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V 250 ns C A IF = IS -di/dt = 100 A/s, VR = 100 V 1 10 TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 Outline Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFH 26N60Q IXFT 26N60Q Fig. 2. Extended Output Characteristics @ 25 deg. C Fig. 1. Output Characteristics @ 25 Deg. C 27 70 VG S = 10V 9V 8V 7V 6V I D - Amperes 21 18 VG S = 10V 9V 8V 7V 60 I D - Amperes 24 15 12 9 5V 50 40 6V 30 20 6 5V 10 3 0 0 0 1 2 3 4 5 6 V DS - Volts 7 8 0 4 16 20 24 Fig. 4. RDS(on) Normalized to ID25 Value vs. @ 125 Deg. C Junction Temperature 27 2.8 VG S = 10V 9V 8V 7V 6V 21 18 5V 15 12 9 6 2.2 1.9 1.3 0 0.4 4 6 8 10 12 14 I D = 13A 1 0.7 2 I D = 26 A 1.6 3 0 VG S = 10V 2.5 R D S (on) - Normalized 24 I D - Amperes 12 V DS - Volts Fig. 3. Output Characteristics -50 16 -25 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to I D25 Value vs. I D 30 3.1 VG S = 10V 2.8 25 2.5 T J = 125C I D - Amperes R D S (on) - Normalized 8 2.2 1.9 1.6 20 15 10 1.3 5 T J = 25C 1 0 0.7 0 10 20 30 40 I D - Amperes (c) 2003 IXYS All rights reserved 50 60 70 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFH 26N60Q IXFT 26N60Q Fig. 8. Transconductance 60 60 50 50 G f s - Siemens I D - Amperes Fig. 7. Input Admittance 40 30 T J = -40C 25C 125C 20 T J = -40C 25C 125C 40 30 20 10 10 0 0 3 3.5 4 4.5 5 5.5 6 6.5 7 0 10 20 V GS - Volts 40 50 60 70 80 90 I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 80 VD S = 300V I D = 13A I G = 10mA 70 8 60 VG S - Volts I S - Amperes 30 50 40 30 T J = 125C 20 T J = 25C 6 4 2 10 0 0 0.2 0.4 0.6 0.8 1 1.2 0 1.4 V SD - Volts 30 60 90 120 150 180 Q G - nanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 10000 1 C iss 1000 R (th) JC - (C/W) Capacitance - pF f = 1M Hh C oss C rss 100 0.1 0.01 0 5 10 15 20 25 V DS - Volts 30 35 40 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343