© 2003 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 600 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ600 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C26A
IDM TC= 25°C, pulse width limited by TJM 104 A
IAR TC= 25°C26A
EAR TC= 25°C45mJ
EAS TC= 25°C 1.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in) from case for 10 s 3 0 0 °C
MdMounting torque TO-247 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Features
zLow gate charge
zInternational standard packages
z Epoxy meet UL 94 V-0, flammability
classification
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zAvalanche energy and current rated
zFast intrinsic Rectifier
Advantages
zEasy to mount
zSpace savings
zHigh power density
G = Gate D = Drain
S = Source TAB = Drain
DS98635E(04/02)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
IXFH 26N60Q
IXFT 26N60Q VDSS = 600 V
ID25 = 26 A
RDS(on) = 0.25 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250µA 600 V
Temperature Coefficient 0.095 %/K
VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V
Temperature Coefficient - 0.24 %/K
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 0.25 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 14 22 S
Ciss 4700 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 580 pF
Crss 230 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 32 ns
td(off) RG = 2.0 Ω (External), 80 ns
tf16 ns
Qg(on) 165 200 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 28 nC
Qgd 76 nC
RthJC 0.35 K/W
RthCK TO-247 0.25 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
TO-268 Outline
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 26 A
ISM Repetitive; pulse width limited by TJM 104 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 250 ns
QRM 1µC
IRM 10 A
IF = IS -di/dt = 100 A/µs, VR = 100 V
IXFH 26N60Q
IXFT 26N60Q
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
© 2003 IXYS All rights reserved
IXFH 26N60Q
IXFT 26N60Q
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
10
20
30
40
50
60
70
0 4 8 12162024
V
DS
- Volts
I
D
- Amperes
V
G S
= 1 0V
9V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
3
6
9
12
15
18
21
24
27
0246810121416
V
DS
- Volts
I
D
- Amperes
V
G S
= 1 0V
9V
8V
7V
6V 5V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
3
6
9
12
15
18
21
24
27
0 12345678
V
DS
- Volts
I
D
- Amperes
V
G S
= 1 0V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
0.4
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigr ade
R
D S (on)
- Normalize
d
I
D
= 26 A
I
D
= 1 3A
V
G S
= 1 0V
Fig. 6. Drain Current vs. Case
T emperature
0
5
10
15
20
25
30
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.7
1
1. 3
1. 6
1. 9
2.2
2.5
2.8
3.1
0 10 20304050 6070
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 1 25ºC
T
J
= 25ºC
V
G S
= 1 0V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH 26N60Q
IXFT 26N60Q
Fig. 11. Capacitance
10 0
10 0 0
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - p
F
C
iss
C
oss
C
rss
f = 1 M Hh
Fig. 10. Gate Charge
0
2
4
6
8
10
0 3060 90120150180
Q
G
- nanoCoulombs
V
G S
- Volts
V
D S
= 300V
I
D
= 1 3A
I
G
= 1 0mA
Fig. 7. Input Admittance
0
10
20
30
40
50
60
33.5 44.5 55.5 66.5 7
V
GS
- Volts
I
D
- Amperes
T
J
= -40ºC
25ºC
1 25ºC
Fig. 12. Maximum T ransient T hermal
Resistance
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(th) JC
-
(ºC/W)
Fig. 8. T ransconductance
0
10
20
30
40
50
60
0 102030405060708090
I
D
- Amperes
G
f s
- Siemens
T
J
= -40ºC
25ºC
1 25ºC
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
10
20
30
40
50
60
70
80
0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 1 25ºC
T
J
= 25ºC
