2N5666S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose high power switching * Power Transistor * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N5666SJ) * JANTX level (2N5666SJX) * JANTXV level (2N5666SJV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 9221 Reference document: MIL-PRF-19500/455 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 200 Collector-Base Voltage VCBO 250 Unit Volts Volts Emitter-Base Voltage VEBO 6 Volts IC 5 A 1.2 6.9 15 150 Collector Current, Continuous Thermal Resistance RJA 3.3 W mW/C W mW/C C/W Operating Junction Temperature Storage Temperature TJ TSTG -65 to +200 C Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 100C Copyright 2002 Rev. D PT PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5666S Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Test Conditions Min Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 A, RBE = 100 250 Units Volts Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 A 6 Volts Collector-Base Cutoff Current ICBO1 Collector-Emitter Cutoff Current ICES1 ICES1 Typ VCB = 200 Volts VCE = 200 Volts VCE = 200 Volts, TA = 150C On Characteristics Max 100 nA 200 100 nA A Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.5 A, VCE = 2 Volts IC = 1 A, VCE = 5 Volts IC = 3 A, VCE = 5 Volts IC = 5 A, VCE = 5 Volts IC = 1 A, VCE = 5 Volts TA = -55C IC = 3 A, IB = 300 mA IC = 5 A, IB = 1 A IC = 3 A, IB = 300 mA IC = 5 A, IB = 1 A Min 40 40 15 5 15 Test Conditions VCE = 5 Volts, IC = 500 mA, f = 10 MHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 120 1.2 1.5 0.4 1.0 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Symbol |hFE| COBO Typ 2 7 120 pF Max Switching Characteristics Parameter Turn-On Time tON IC = 1 A, VCC = 100 Volts 0.25 Units s Turn-Off Time tOFF IC = 1 A, VCC = 100 Volts 1.5 s Copyright 2002 Rev. D Symbol Test Conditions Min Typ Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2