Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N5666S
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5666SJ)
• JANTX level (2N5666SJX)
• JANTXV level (2N5666SJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose high power switching
• Power Transistor
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 9221
• Reference document:
MIL-PRF-19500/455
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 200
Volts
Collector-Base Voltage VCBO 250
Volts
Emitter-Base Voltage VEBO 6
Volts
Collector Current, Continuous IC 5
A
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 1.2
6.9
W
mW/°C
Power Dissipation, TC = 25°C
Derate linearly above 100°C PT 15
150
W
mW/°C
Thermal Resistance RθJA 3.3 °C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N5666S
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CER IC = 10 µA, RBE = 100 Ω 250
Volts
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA 6
Volts
Collector-Base Cutoff Current ICBO1 V
CB = 200 Volts 100 nA
Collector-Emitter Cutoff Current ICES1
ICES1
VCE = 200 Volts
VCE = 200 Volts, TA = 150°C
200
100
nA
µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
hFE5
IC = 0.5 A, VCE = 2 Volts
IC = 1 A, VCE = 5 Volts
IC = 3 A, VCE = 5 Volts
IC = 5 A, VCE = 5 Volts
IC = 1 A, VCE = 5 Volts
TA = -55°C
40
40
15
5
15
120
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 3 A, IB = 300 mA
IC = 5 A, IB = 1 A
1.2
1.5 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 3 A, IB = 300 mA
IC = 5 A, IB = 1 A
0.4
1.0 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 500 mA,
f = 10 MHz 2 7
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 120
pF
Switching Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Turn-On Time tON I
C = 1 A, VCC = 100 Volts 0.25 µs
Turn-Off Time tOFF I
C = 1 A, VCC = 100 Volts 1.5 µs