SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES *High Current : IC=-800mA. *DC Current Gain : hFE=100630 (VCE=-1V, Ic=-100mA). *For Complementary with NPN type BC338. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - -100 nA Collector Cut-off Current ICBO VCB=-25V, IE=0 DC Current Gain (Note) hFE VCE=-1V, IC=-100mA 100 - 630 Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V Base-Emitter Voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V Transition Frequency fT VCE=-5V, IC=-10mA, f=100MHz - 100 - MHz VCB=-10V, f=1MHz, IE=0 - 16 - pF Cob Collector Output Capacitance Note : hFE Classification none:100630, 2000. 2. 28 16:100250, Revision No : 2 25:160400, 40:250630 1/2 BC328 2000. 2. 28 Revision No : 2 2/2