PESD5V0F1BLD - NXP - Datasheet.Wiki

1. Product profile

1.1 General description

Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to

protect one signal line from the damage caused by ESD and other transients. The device

is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted

Device (SMD) plastic package with visible and solderable side pads.

The combination of extreme ly low ca p acit ance, h igh ESD maximum r ating and ultr a small

package makes the device ideal for high-speed data line protection and antenna

protection ap plic at ion s.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

Rev. 1 — 23 July 2012 Product data sheet

DFN1006D-2

Bidirectional ESD protection of one line ESD protection up to 10 kV

Femtofarad capacitance: Cd= 400 fF IEC 61000-4-2; level 4 (ESD)

Low ESD clamping voltage: 30 V

at 30 ns and 8kV

Package height typ. 0.37 mm

Very low leakage current: IRM <1nA AEC-Q101 qualified

10/100/1000 Mbit/s Ethernet Portable electronics

FireWire Communication systems

High-speed data lines Computers and pe rip h er als

SIM card protection Audio and video equipment

Cellular handsets and accessories Antenna protection

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per device

VRWM reverse standoff voltage - - 5.5 V

Cddiode capacitance f = 1 MHz; VR=0V - 0.4 0.55 pF

Product data sheet Rev. 1 — 23 July 2012 2 of 11

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] Device stressed with ten non-repetitive current pulses (8/20 s expo nential decay waveform according to

IEC 61000-4-5 and IEC 61643-321).

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode (diode 1)

2 cathode (diode 2)

Transparent

top view

sym045

Tabl e 3. Ordering i nfo rmation

Type number Package

Name Description Version

PESD5V0F1BLD DFN1006D-2 leadless ultra small plastic package; 2 terminals;

body 1 0.6 0.4 mm SOD882D

Table 4. Marking codes

Type number Marking code

PESD5V0F1BLD H

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per device

IPPM rated peak pulse current tp=8/20s[1] -2.5A

Tjjunction temperature - 125 C

Tamb ambient temperature 40 +125 C

Tstg storage temperature 55 +125 C

Product data sheet Rev. 1 — 23 July 2012 3 of 11

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

[1] Device stressed with ten non-repetitive ESD pulses.

Table 6. ESD maximum ratings

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Max Unit

Per device

VESD electrostatic discharge voltage IEC 61000-4-2

(contact discharge) [1] -10kV

IEC 61000-4-2

(air discharge) [1] -10kV

MIL-STD-883

(human body model) -10kV

Table 7. ESD standards compliance

Standard Conditions

Per device

IEC 61000-4-2; level 4 (ESD) > 8 kV (contact)

MIL-STD-883; class 3B (human body model) > 8 kV

Fig 1. 8/20 s pulse wav eform according to

IEC 61000-4-5 and IEC 61643 -321 Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa631

100 %

90 %

30 ns 60 ns

10 %

= 0.7 ns to 1 ns

Product data sheet Rev. 1 — 23 July 2012 4 of 11

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

6. Characteristics

[1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.

[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;

ANS/IESD STM5-1-2008.

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per device

VRWM reverse standoff

voltage --5.5V

IRM reverse leakage current VRWM = 5 V - 1 100 nA

VBR breakdown voltage IR=1mA 6 8 10 V

Cddiode capacitance f = 1 MHz; VR=0V - 0.4 0.55 pF

VCL clamping voltage IPP =1A [1] --11V

IPPM =2.5A [1] --15V

rdyn dynamic resistance IR=10A [2] -1.5-

f=1MHz; T

amb =25C

Fig 3. Diode capacitance as a function of reverse

voltage; typical values Fig 4. V-I characteristics for a bidirectional

ESD protection diode

VR (V)

−6.0 6.02.0−2.0

006aab598

0.3

0.4

0.5

(pF)

0.2

006aab325

-VCL -VBR -VRWM VCL

VBR

VRWM

-IRM

IRM

-IR

-IPP

IPP

IPPM

-IPPM

Product data sheet Rev. 1 — 23 July 2012 5 of 11

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

Fig 5. ESD clamping test setu p and waveforms

006aab599

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 Ω

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

GND

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

vertical scale = 50 V/div

horizontal scale = 15 ns/div

vertical scale = 50 V/div

horizontal scale = 15 ns/div

Product data sheet Rev. 1 — 23 July 2012 6 of 11

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

7. Application information

The device is designed for the pr otection of one bidirectional dat a or signal line from surge

pulses and ESD damage. The device is suitable on lines where the signal polarities are

both, positive and negative with respect to ground.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as clos e to the input terminal or connector as possible.

2. Minimize the path length between the device and the protected line.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualifica tion for discrete semiconductors, and is

suitable for use in automotive applications.

Fig 6. Application di ag ram

aaa-002737

ESD protection diode

GND

line to be protected

Product data sheet Rev. 1 — 23 July 2012 7 of 11

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Fig 7. Package outline DFN1006D-2 (SOD882D)

12-05-01Dimensions in mm

0.65

0.30

0.22

0.30

0.22

0.55

0.45

0.65

0.55 0.4

max

1.05

0.95

cathode marking on top side (if applicable)

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantit y

10000

PESD5V0F1BLD DFN1006D-2

(SOD882D) 2 mm pitch, 8 mm tape and reel -315

Fig 8. Reflow soldering footprint DFN1006D-2 (SOD882D)

solder lands

solder resist

solder paste

sod882d_fr

Dimensions in mm

1.4

0.2

0.3

0.4

1.3

0.8

(2×) 0.6

(2×) 0.7

(2×)

Product data sheet Rev. 1 — 23 July 2012 8 of 11

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD5V0F1BLD v.1 20120723 Product data sheet - -

Product data sheet Rev. 1 — 23 July 2012 9 of 11

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device (s) descri bed in this d ocument may have change d since this document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect , incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

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contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulati ve liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use in automotive applications — T his NXP

Semiconductors product has been qualified for use in automotive

applications. Unless ot herwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications an d ther efo re su ch inclusi on a nd/or use is at the cu stome r's own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessa ry

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the prod uct specification.

Product data sheet Rev. 1 — 23 July 2012 10 of 11

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

No offer to sell or license — Nothing in this document may be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PESD5V0F1BLD

Femtofarad bidirectional ESD protection diode

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 23 July 2012

Document identifier : PES D5 V0 F1B LD

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Contact information. . . . . . . . . . . . . . . . . . . . . 10

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11