KSD-T0C036-000 2
2N3904N
Absolute Maximum Ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 40 V
Emitter-base voltage VEBO 6 V
Collector current IC 200 mA
Collector power dissipation PC 400 mW
Junction temperature TJ 150
°C
Storage temperature range Tstg -55~150
°C
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-emitter breakdown voltage BVCEO I
C=1mA, IB=0 40 - - V
Collector cut-off current ICEX V
CE=30V, VEB=3V - - 50 nA
DC current gain hFE V
CE=1V, IC=10mA 100 - 300 -
Collector-emitter saturation voltage VCE(sat) I
C=50mA, IB=5mA - - 0.3 V
Base-emitter voltage VBE V
CE=1V, IC=10mA - 0.75 1.0 V
Transition frequency fT V
CE=20V, IC=10mA - 300 - MHz
Collector output capacitance Cob V
CB=5V, IE=0, f=1MHz - 3 - pF
Turn on delay time td - - 35 ns
Rise time tr
VCC=3V, VBE(off)=0.5V,
IC=10mA, IB1=1mA - - 35 ns
Storage time tstg - - 200 ns
Fall Time tf
VCC=3V, IC=10mA,
IB1=IB2=1mA - - 50 ns