Preliminary Technical Information Trench Gate HiperFET Power MOSFET FMM50-025TF 3 3 Phase Leg Topology VDSS ID25 RDS(on) trr(typ) T1 55 = = = 250V 30A 60m 84ns 4 4 T2 N-Channel 1 1 ISOPLUS i4-PakTM 22 Symbol Test Conditions TJ TJM Tstg VISOLD 50/60HZ, RMS, t = 1min, Leads-to-Tab TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s FC Mounting Force Maximum Ratings -55 ... +150 150 -55 ... +150 C C C 2500 V~ 300 260 C C 20..120/ 4.5..27 N/lb. 1 Isolated Tab 5 Features z Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSM Transient 30 V ID25 TC = 25C 30 A IDM TC = 25C, Pulse Width Limited by TJM 130 A IA TC = 25C 25 A EAS TC = 25C 400 mJ dV/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns PD TC = 25C 125 W z z z z Advantages z z z z z Symbol Test Conditions CP Coupling Capacitance Between Shorted Pins and Mounting Tab in the Case Characteristic Values Min. Typ. Max. dS ,dA dS ,dA Pin - Pin Pin - Backside Metal Weight (c) 2012 IXYS CORPORATION, All Rights Reserved pF z z 1.7 5.5 mm mm 9 Low Gate Drive RRequirement High power density Fast Intrinsic Rectifier Low Drain to Ground Capacitance Fast Switching Applications z 40 Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Low QG Low Drain-to-Tab capacitance Low package inductance z z z DC and AC Motor Drives UPS, Solar and Wind Power Inverters Synchronous Rectifiers Multi-Phase DC to DC Converters Industrial Battery Chargers Switching Power Supplies g DS100040A(06/12) FMM50-025TF Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 250 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 20 V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 25A, Note 1 gfs VDS = 10V, ID = 25A, Note 1 V 4.5 V 100 nA 1 A 150 A TJ = 125C 60 m 35 Ciss Coss ISOPLUS i4-PakTM Outline VGS = 0V, VDS = 25 V, f = 1 MHz 58 S 4000 pF 410 pF 60 pF Crss td(on) Resistive Switching Times 14 ns tr VGS = 15V, VDS = 0.5 z VDSS, ID = 25A 25 ns td(off) RG = 5 (External) 47 ns tf 25 ns Qg(on) 78 nC 19 nC 22 nC Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 25A Qgd 1.0 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 30 A Repetitive, Pulse Width Limited by TJM 200 A IF = 50A, VGS = 0V, Note 1 1.5 V IF = 25A, -di/dt = 250A/s VR = 100V, VGS = 0V 84 ns 15.4 A 650 nC 1. Pulse test, t 300s, duty cycle, d 2 %. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2