© 2012 IXYS CORPORATION, All Rights Reserved
Trench Gate HiperFET
Power MOSFET
Phase Leg Topology
N-Channel
DS100040A(06/12)
FMM50-025TF
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 250 V
VGSM Transient ± 30 V
ID25 TC= 25°C 30 A
IDM TC= 25°C, Pulse Width Limited by TJM 130 A
IATC= 25°C 25 A
EAS TC= 25°C 400 mJ
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns
PDTC= 25°C 125 W
Symbol Test Conditions Maximum Ratings
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOLD 50/60HZ, RMS, t = 1min, Leads-to-Tab 2500 V~
TL 1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
FC Mounting Force 20..120/ 4.5..27 N/lb.
VDSS = 250V
ID25 = 30A
RDS(on) ≤≤
≤≤
≤ 60mΩΩ
ΩΩ
Ω
trr(typ) = 84ns
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
zAvalanche Rated
zLow QG
zLow Drain-to-Tab capacitance
zLow package inductance
Advantages
zLow Gate Drive RRequirement
zHigh power density
zFast Intrinsic Rectifier
zLow Drain to Ground Capacitance
zFast Switching
Applications
zDC and AC Motor Drives
zUPS, Solar and Wind Power Inverters
zSynchronous Rectifiers
zMulti-Phase DC to DC Converters
zIndustrial Battery Chargers
zSwitching Power Supplies
T2
3
5
4
1
2
T1
3
5
4
1
2ISOPLUS i4-PakTM
1
5
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
CP Coupling Capacitance Between Shorted 40 pF
Pins and Mounting Tab in the Case
dS ,dA Pin - Pin 1.7 mm
dS ,dA Pin - Backside Metal 5.5 mm
Weight 9 g
Preliminary Technical Information
Isolated Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
FMM50-025TF
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 250 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ±20 V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS = 0V 1 μA
TJ = 125°C 150 μA
RDS(on) VGS = 10V, ID = 25A, Note 1 60 mΩ
gfs VDS = 10V, ID = 25A, Note 1 35 58 S
Ciss 4000 pF
Coss VGS = 0V, VDS = 25 V, f = 1 MHz 410 pF
Crss 60 pF
td(on) Resistive Switching Times 14 ns
trVGS = 15V, VDS = 0.5 z VDSS, ID = 25A 25 ns
td(off) RG = 5Ω (External) 47 ns
tf 25 ns
Qg(on) 78 nC
Qgs VGS= 10V, VDS = 0.5 z VDSS, ID = 25A 19 nC
Qgd 22 nC
RthJC 1.0 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 30 A
ISM Repetitive, Pulse Width Limited by TJM 200 A
VSD IF = 50A, VGS = 0V, Note 1 1.5 V
trr 84 ns
IRM 15.4 A
QRM 650 nC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IF = 25A, -di/dt = 250A/μs
VR = 100V, VGS = 0V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
ISOPLUS i4-PakTM Outline
