HGT1S10N120BNST - ON SEMICONDUCTOR

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HGTG10N120BN, HGTP10N120BN,

HGT1S10N120BNS

35A, 12 00V, NPT Series N-Channel IGB T

The HGTG10N120BN, HGTP10N120BN and

HGT1S10N120BNS are Non-Punch Through (NPT) IGBT

designs. They are new members of the MOS gated hi gh

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power su ppl ies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49290.

Symbol

Features

• 35A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

•Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.fairchildsemi.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging JEDEC STYLE T O- 247

JEDEC TO-220AB (ALTERNATE VERSION)

JEDEC TO-263AB

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG10N120BN TO-247 G10N120BN

HGTP10N120BN TO-220AB 10N120BN

HGT1S10N120BNS TO-263AB 10N120BN

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the TO-263AB variant in tape and reel, e.g.

HGT1S10N120BNST.

COLLECTOR

(FLANGE)

COLLECTOR E

(FLANGE) C

GCOLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet Au gust 2002

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG10N120BN

HGTP10N120BN

HGT1S10N120BNS UNITS

Collect o r to Em itter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 35 A

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 17 A

Collector Current Pulsed (Note 1 ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 80 A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V

Switching Safe O perating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD298 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV 80 mJ

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

P ackage Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300

260

Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8µs

Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs

CAUTION: Str esses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess onl y rating and operation o f the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction tempera ture.

2. ICE = 20A, L = 400µH, TJ = 25oC.

3. VCE(PK) = 840V, TJ = 125 oC, RG = 10Ω.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S

Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V

Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V

Collector to Emitter Leakage Current ICES VCE = 1200V TC = 25oC - - 250 µA

TC = 125oC - 150 - µA

TC = 150oC--2mA

Collector to Emitter Saturation Voltage VCE(SAT) IC = 10A,

VGE = 15V TC = 25oC - 2.45 2.7 V

TC = 150oC-3.74.2V

Gate to Emitter Threshold Voltage VGE(TH) IC = 90µA, VCE = VGE 6.0 6.8 - V

Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 10Ω, VGE = 15V,

L = 400µH, VCE(PK) = 1200V 55 - - A

Gate to Emitter Plateau Voltage VGEP IC = 10A, VCE = 600V - 10.4 - V

On-State Gate Charge QG(ON) IC = 10A,

VCE = 600V VGE = 15V - 100 120 nC

VGE = 20V - 130 150 nC

HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC

ICE = 10A

VCE = 960V

VGE = 15V

RG = 10Ω

L = 2mH

Test Circuit (Figure 18)

-2326ns

Current Rise Time trI -1115ns

Current Turn-Off Delay Time td(OFF)I - 165 210 ns

Current Fall Time tfI - 100 140 ns

Turn-On Energy (Note 5) EON1 -0.320.4 mJ

Turn-On Energy (Note 5) EON2 -0.851.1 mJ

Turn-Off Energy (Note 4) EOFF -0.81.0mJ

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC

ICE = 10A

VCE = 960V

VGE = 15V

RG = 10Ω

L = 2mH

Test Circuit (Figure 18)

-2125ns

Current Rise Time trI -1115ns

Current Turn-Off Delay Time td(OFF)I - 190 250 ns

Current Fall Time tfI - 140 200 ns

Turn-On Energy (Note 5) EON1 -0.40.5mJ

Turn-On Energy (Note 5) EON2 -1.752.3 mJ

Turn-Off Energy (Note 4) EOFF -1.11.4mJ

Thermal Resistance Junction To Case RθJC - - 0.42 oC/W

NOTES:

4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2

is the turn-on loss when a typical diode is used in t he test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in

Figure 18.

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S

Typical Performance Curves Unless Otherwise Specified

FIGURE 1. DC COLLECT OR CURRENT vs CASE

TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

TC, CASE TEMPERATURE (oC)

ICE, DC COLLECTOR CURRENT (A)

25 75 100 125 150

VGE = 15V

VCE, COLLECTOR TO EMITTER V OLTAGE (V)

1400

ICE, COLLECTOR TO EMITTER CURRENT (A)

600 800400200 1000 1200

TJ = 150oC, RG = 10Ω, VGE = 15V, L = 400µH

HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS

FIGURE 3. OPERA TING FREQUE NCY vs COLLECT OR T O

EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR T O

EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR TO

EMITTER CURRENT

Typical Performance Curves Unless Otherwise Specified (Continued)

ICE, COLLECTO R TO EMITTER CURRENT (A)

TJ = 150oC, RG = 10Ω, L = 2mH, VCE = 960V

fMAX, OPERATING FREQUENCY (kHz)

2010

100

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

RØJC = 0.42 oC/ W, SEE NOTES

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

fMAX2 = (PD - PC) / (EON2 + EOFF)

TC = 75oC, VGE = 15V, IDEAL DIODE

TCVGE

110oC12V

15V

75oC

110oC

75oC12V

VGE, GATE TO EMITTER VOLTAGE (V)

ISC, PEAK SHORT C IRCUIT CURRENT (A)

tSC, SHORT CIRCUIT WITHSTAND TIME (µs)

12 13 14 15 16

100

150

250

tSC ISC

200

VCE = 840V, RG = 10Ω, TJ = 125oC

024

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

6810

PULSE DURATION = 250µs

DUTY CYCLE <0.5%, VGE = 12V

TC = -55oCTC = 25oC

TC = 150oC

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER V OLTAGE (V)

0246810

TC = -55oC

TC = 25oC

TC = 150oC

DUTY CYCLE <0.5%, VGE = 15V

PULSE DURATION = 250µs

EON2, TURN-ON ENERGY LOSS (mJ)

ICE, COLLECTOR TO EMITTER CURRENT (A)

015 20

TJ = 25oC, VGE = 12V, VGE = 15V

RG = 10Ω, L = 2mH, VCE = 960V

TJ = 150oC, VGE = 12V, VGE = 15V 1.5

ICE, COLLECTOR TO EMITTER CURRENT (A)

EOFF, TURN-OFF ENERGY LOSS (mJ)

050

1.0

0.5

2.0

RG = 10Ω, L = 2mH, VCE = 960V

TJ = 25oC, VGE = 12V OR 15V

TJ = 150oC, VGE = 12V OR 15V

15 20

HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS

FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR TO

EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTO R T O

EMITTER CURRENT

FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR T O

EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECT OR T O EMITT ER

CURRENT

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

Typical Performance Curves Unless Otherwise Specified (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

tdI, TURN-ON DELAY TIME (ns)

15 20

RG = 10Ω, L = 2mH, VCE = 960V

TJ = 25oC, TJ = 150oC, VGE = 12V

TJ = 25oC, TJ = 150oC, VGE = 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

trI, RISE TIME (ns)

15010520

50 RG = 10Ω, L = 2mH, VCE = 960V

TJ = 25oC OR TJ = 150oC, VGE = 15V

TJ = 25oC, TJ = 150oC, V GE = 12V

250

100

200

ICE, COLLECTOR TO EMITTER CURRENT (A)

td(OFF)I, TURN-OFF DELAY TIME (ns)

400

300

350

RG = 10Ω, L = 2mH, VCE = 960V

VGE = 12V, VGE = 15V, TJ = 25oC

VGE = 12V, VGE = 15V, TJ = 150oC

150

ICE, COLLECTOR TO EMITTER CURRENT (A)

tfI, FALL TIME (ns)

150

200

100

250

300

201510

TJ = 25oC, VGE = 12V OR 15V

TJ = 150oC, VGE = 12V OR 15V

RG = 10Ω, L = 2mH, VCE = 960V

ICE, COLLECTOR TO EMITTER CURRENT (A)

138 9 10 12

VGE, GATE TO EMITTER VOLTAGE (V)

14 15

100

TC = 150oC

TC = -55oC

PULSE DURATION = 250µs

DUTY CYCLE <0.5%, VCE = 20V

TC = 25oC

VGE, GATE TO EMITTER VOLTAGE (V)

QG, GATE CHARGE (nC)

006020 80

VCE = 800V

IG (REF) = 1mA, RL = 60Ω, TC = 25oC

VCE = 1200V

120

VCE = 400V

100

HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS

FIGURE 15. CAPA CITANCE vs COLL ECT OR T O EMITTE R

VOLTAGE FIGURE 16. COLLECTOR TO EM ITTER ON-STATE VOLTAGE

FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

Typical Performance Curves Unless Otherwise Specified (Continued)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

C, CAPACITANCE (nF)

CRES

0 5 10 15 20 25

CIES

COES

4FREQUENCY = 1MHz

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

15 DUTY CYCLE <0.5%, TC = 110oC

PULSE DURATION = 250µs

VGE = 10V

VGE = 15V

SINGLE PULSE

t1, RECTANGULAR PULSE DURATION (s)

10-2

10-1

100

10-5 10-3 10-2 10-1 100

10-4

DUTY FACTOR, D = t1 / t2

PEAK TJ = (PD X ZθJC X RθJC) + TC

ZθJC, NORMALIZED THERMAL RESPONSE

0.5

0.2

0.1

0.05

0.02

0.01

Test Circuit and Waveforms

FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS

RG = 10Ω

L = 2mH

VDD = 960V

HGTG10N120BND

tfI

td(OFF)I trI

td(ON)I

10%

90%

10%

90%

VCE

ICE

VGE

EOFF

EON2

HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to

gate-insulation damage by the electrostatic discharge of

energy through the devices. When handling these devices,

care should be exercised to assure that the static charge

bui lt in the handler’s body capacitance is not discharged

through the device. With proper handling and application

procedures, however, IGBTs are cu rrently being extensively

used in production b y nume rous equipment m anuf acturers in

military, industrial and consumer applications, with virtually

no damage problems due to electrostatic discharge. IGBTs

can be handled safely if the following basic precautions are

taken:

1. Prior to assem b ly int o a circui t, all l eads s hould be k ept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as “ECCOSORBD™ LD26” or equivalent.

2. When de vice s are remov ed by hand from thei r carriers,

the hand being u sed shoul d be grou nded b y any suitab le

means - for example, with a metallic wristband.

3. Tips of soldering irons sh ould be grounded.

4. De vices sho uld n e v er b e ins erted into or remo v e d from

circuits with power on.

5. Gate Voltage Rating - Nev er e xc eed the gate- vol tage

rating of VGEM. Exceeding the rated V GE can result in

permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of thes e de vices are

essentially capacitors. Circuits that leave the gate open-

circuit ed or floating shoul d be a v oide d. Thes e condi tions

can resu lt i n turn-on of th e device due to v o ltage build up

on the input capacitor due to leakage currents or pickup.

7. Gate Protection - The se de vices do no t hav e an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an e xternal Zener is recommended.

Operating Frequency Information

Operating frequency infor mation for a typical device

(Figure 3) is presented as a guide for estimating device

performance for a specific application. Other typical

frequency vs collector current (ICE) plots are possible using

the inf o rmatio n shown fo r a typical unit in Fi gures 5, 6, 7 , 8, 9

and 11. The operating frequency plot (Figure 3) of a typical

device shows fMAX1 or fMAX2; whichever is smaller at each

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).

Deadti me (the de nominato r) has bee n arbit rarily held to 10%

of the on-state time for a 50% duty factor. Other definitions

are possible. td(OFF)I and td(ON)I are defined in Figure 19.

Device turn-off delay can establish an additional frequency

limiting condition for an application other than TJM. td(OFF)I

is important when controlling output ripple under a lightly

loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The

allowab le dissipation (PD) is defined by PD=(T

JM -T

C)/RθJC.

The sum of device switching and con duc ti on lo sses must

not exceed PD. A 50% duty factor was used ( Figure 3) and

the condu cti on lo sse s (PC) are approx imated by

PC=(V

CE xI

CE)/2.

EON2 and EOFF are defined in the switching waveforms

shown in Figure 19. EON2 is the integral of the

instantaneous power loss (ICE x VCE) during turn-on and

EOFF is the integr al of the instan tan eou s po wer loss

(ICE xV

CE) during turn-off . All tai l los se s are incl ude d in the

calculation for E OFF; i.e., the collector current eq uals zero

(ICE = 0).

HGTG10N120BN, HGTP10N1 20BN, HGT1S10N120BNS

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

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Rev. I1

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