BCW 61 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage PNP Power dissipation - Verlustleistung 1.3 0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehause 1.1 2.9 0.1 0.4 1.9 Dimensions / Mae in mm 1=B 2=E 3=C PNP SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCW 61 Collector-Emitter-voltage B open - VCE0 32 V Collector-Base-voltage E open - VCB0 32 V Emitter-Base-voltage C open - VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (DC) - IC 100 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 200 mA Peak Base current - Basis-Spitzenstrom - IBM 200 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 32 V - ICB0 - - 20 nA IE = 0, - VCB = 32 V, Tj = 150/C - ICB0 - - 20 :A - IEB0 - - 20 nA Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 4 V 2 Collector saturation volt. - Kollektor-Sattigungsspg. ) 1 - IC = 10 mA, - IB = 0.25 mA - VCEsat 60 mV - 250 mV - IC = 50 mA, - IB = 1.25 mA - VCEsat 120 mV - 550 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 01.11.2003 General Purpose Transistors BCW 61 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage - Basis-Sattigungsspannung 1) - IC = 10 mA, - IB = 0.25 mA - VBEsat 600 mV - 850 mV - IC = 50 mA, - IB = 1.25 mA - VBEsat 700 mV - 1050 mV DC current gain - Kollektor-Basis-Stromverhaltnis 3) - VCE = 5 V, - IC = 10 :A - VCE = 5 V, - IC = 2 mA - VCE = 1 V, - IC = 50 mA BCW 61B hFE 30 - - BCW 61C hFE 40 - - BCW 61D hFE 100 - - BCW 61B hFE 180 - 310 BCW 61C hFE 250 - 460 BCW 61D hFE 380 - 630 BCW 61B hFE 80 - - BCW 61C hFE 90 - - BCW 61D hFE 100 - - Base-Emitter voltage - Basis-Emitter-Spannung 1) - VCE = 5 V, - IC = 10 :A - VBEon - 550 mV - - VCE = 5 V, - IC = 2 mA - VBEon 600 mV 650 mV 750 mV - VCE = 1 V, - IC = 50 mA - VBEon - 720 mV - 100 MHz - - - 4.5 pF - CEB0 - 11 pF - F - 2 dB 6 dB Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 :A, RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung 3 4 BCW 61B = BB 420 K/W 4) RthA BCW 60 series BCW 61C = BC BCW 61D = BD ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003