SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance MAXIMUM RATINGS (Ta=25C) SC-59 : VF=0.92V(Typ.) trr=l.6ns(Typ.) Cr=2.2pF(Typ.) 1$$181 Unit in mm 2.9+0.2 0.95 0.95 9 wo 4 ao CHARACTERISTIC SYMBOL RATING UNIT New 2 ee od 4 Maximum(Peak) Reverse Voltage VRM 85 Vv i] ' = 4 | 4 Reverse Voltage VR 80 Vv mo Maximum(Peak) Forward Current LEM 300* mA , Average Forward Current Lo 100* mA 1d - 3 1. CATHODE Surge Current (10ms) IFSM 2% A = 2. CATHODE 2c 3. ANODE Power Dissipation P 150 mi] JEDEC ~ Junction Temperature Tj 125 C ELA SC-59 Storage Temperature Tstg -55-125 c TOSHIBA 1-3GI1E * Unit Rating. Total Rating=Unit Rating x1.5 Weight : 0.013, ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION NIN.| TYP.] MAX.] UNIT VF(1) Irf=1lmA - 0.61 ~ Forward Voltage VF(2) Ip=1lOmA - 0.74 - Vv VF(3) | Tr=LOOmA - |0.92 [1.20 1 Vp=30V - ~ al Reverse Current RCL) R uA In(2) | VR=80V - - 0.5 Total Capacitance Cr Vp=0, F=1MHz ~ 2. 0 pF Reverse Recovery Time trr IF=10mA, Fig.1 - 1.6 4.0 ns Marking A A 3 BH 4 1$S181 Ir V , 3 F F In VR 4 % ~ S = = & 3 ms fe 5 5 a Ba s a = fa & > E fe 0 02 04 0. 0 1. 1.2 0 20 40 FORWARD VOLTAGE Vp (V) REVERSE VOLTAGE Vp (Vv) Cr V T R ter IF v~ 300 ~ @ ty < c . 50 u 30 oO = a] 5 Z = 10 S > n B 5 > s 5 E: Q 3 3 as z a & ee 1 5 8 3 0.5 0.3 1 3 10 30 100 OL 0.3 1 3 10 100 REVERSE VOLTAGE Vp qv) FORWARD CURRENT Ip (mA) Fig. 1 REVERSE RECOVERY TIME (trr) TEST CIRCUIT INPUT OUTPUT WAVEFORM WAVEFORM InpuT 0.014F DUT Q OUTPUT ~y Ipl0mA a S a OSCILOSCOPE 01 Ip oo -6V S red (Rin = 500) Ip 50ns E PULSE GENERATOR try RouT= 502) N 1122