DATA SH EET
Product specification
Supersedes data of 1998 Jan 07 2003 Sep 02
DISCRETE SEMICONDUCTORS
BLF521
UHF power MOS transistor
M3D079
2003 Sep 02 2
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
FEATURES
•High power gain
•Easy power control
•Gold metallization
•Good thermal stability
•Withstands full load mismatch
•Designed for broadband operation.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for communications
transmitter applications in the UHF
frequency range.
The transistor is encapsulated in a
4-lead, SOT172D studless package,
with a ceramic cap. All leads are
isolated from the mounting base.
PINNING - SOT172D
PIN DESCRIPTION
1 source
2 gate
3 drain
4 source
PIN CONFIGURATION
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostaticdischargeduringtransportandhandling.Forfurtherinformation,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
o
ok, halfpage
2
1
4
3
MSB007
Top view
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at Tamb = 25 °C in a common source test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 500 12.5 2 >10 >50
2003 Sep 02 3
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Mounted on printed-circuit board; see Fig.12.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −40 V
VGS gate-source voltage −±20 V
IDdrain current (DC) −1A
P
tot total power dissipation Tmb ≤25 °C−10 W
Tstg storage temperature −65 150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER VALUE UNIT
Rth j-mb thermal resistance from junction to mounting base 17.5 K/W
Rth j-a thermal resistance from junction to ambient; note1 75 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDSon.
(2) Tmb =25°C.
handbook, halfpage
0.1
1
1 10 100
5
(1)
ID
(A)
VDS (V)
MRA989
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0 40 80 160
16
12
4
0
8
120
MDA486
(1)
(2)
Ptot
(W)
Tmb ( °C)
2003 Sep 02 4
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 3 mA 40 −−V
I
DSS drain-source leakage current VGS = 0; VDS = 12.5 V −−10 µA
IGSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA
V
GSth gate-source threshold voltage ID= 3 mA; VDS =10V 2 −4.5 V
gfs forward transconductance ID= 0.3 A; VDS = 10 V 80 135 −mS
RDSon drain-source on-state resistance ID= 0.3 A; VGS =15V −3.5 4 Ω
IDSX on-state drain current VGS = 15 V; VDS =10V −1.3 −A
Cis input capacitance VGS =0;V
DS = 12.5 V; f = 1 MHz −5.3 −pF
Cos output capacitance VGS =0;V
DS = 12.5 V; f = 1 MHz −7.8 −pF
Crs feedback capacitance VGS =0;V
DS = 12.5 V; f = 1 MHz −1.8 −pF
VGS group indicator
GROUP LIMITS
(V) GROUP LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
2003 Sep 02 5
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
Fig.4 Temperature coefficient of gate-source
voltageasafunctionofdraincurrent;typical
values.
VDS =10V.
handbook, halfpage
15
−5
5
10
0
MDA485
1ID (A)
T.C
(mV/K)
10 102103
Fig.5 Drain current as a function of gate-source
voltage; typical values.
VDS =10V
;T
j=25°C.
handbook, halfpage
04 20
1600
1200
400
0
800
81216
MDA484
ID
(mA)
VGS (V)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
ID= 0.3 A; VGS =15V.
handbook, halfpage
04080
R
DSon
(Ω)
Tj (°C) 160
5
0
4
120
3
2
1
MDA483
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
0
30
20
10
04
Cos
Cis
VDS (V)
C
(pF)
816
12
MDA482
2003 Sep 02 6
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
048
C
rs
(pF)
VDS (V) 16
5
0
4
12
3
2
1
MDA481
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tamb =25°C; RGS = 274 Ω, unless otherwise specified.
RF performance in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF521 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: VDS = 15.5 V; f = 500 MHz at rated output power.
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 500 12.5 10 2 > 10
typ. 13 > 50
typ. 60
2003 Sep 02 7
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
Fig.9 Power gain and efficiency as functions of
load power; typical values.
Class-B operation; VDS = 12.5 V; IDQ =10mA;
Z
L= 9.5 +j12.8; f = 500 MHz.
handbook, halfpage
0.5 1.5 PL (W)
Gp
(dB)
2.5 3.5
20
0
16
12
8
4
100
0
80
60
40
20
MDA480
Gp
ηD
(%)
ηD
Fig.10 Load power as a function of input power;
typical values.
Class-B operation; VDS = 12.5 V; IDQ = 20 mA;
ZL= 9.5 +j12.8; f = 175 MHz.
handbook, halfpage
0 0.2 1.0
4
3
1
0
2
0.4 0.6 0.8
MDA479
PL
(W)
PIN (W)
Fig.11 Test circuit for class-B operation.
f = 500 MHz.
handbook, full pagewidth
MDA475
D.U.T.
C2
C3
C12
L1 L2 L3
C1
L5 L8 L10L9
L6
R1
R2
R6 C11
L4 C15 50 Ω
output
50 Ω
input
+VD
C4
C8C5
C6
R4 R5
C7
R3 C9
L7
C10
C14C13
BLF521
,,,,,
,,,,,
,,,,,
2003 Sep 02 8
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
List of components class-AB test circuit (see Fig.12)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
3. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr= 2.2),
thickness 1.6 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C5, C8,
C15 multilayer ceramic chip capacitor; note 1 390 pF, 500 V
C2, C13 film dielectric trimmer 2 to 9 pF 2222 809 09002
C3 multilayer ceramic chip capacitor; note 2 5.6 pF, 500 V
C4 film dielectric trimmer 2 to 18 pF 2222 809 09003
C6, C11 multilayer ceramic chip capacitor 2 ×100 nF in
parallel, 50 V 2222 852 47104
C7, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104
C10 electrolytic capacitor 10 µF, 63 V 2222 030 38109
C12 multilayer ceramic chip capacitor; note 2 9.1 pF, 50 V
C14 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09001
L1 stripline; note 3 83 Ω20 ×2mm
L2 stripline; note 3 83 Ω21 ×2mm
L3 stripline; note 3 83 Ω19 ×2mm
L4, L5 stripline; note 3 67 Ω12 ×3mm
L6 5 turns enamelled 0.5 mm copper wire 62 nH length 3.75 mm
int. dia. 3 mm
leads 2 ×4mm
L7 grade 3B Ferroxcube RF choke 4312 020 36642
L8 stripline; note 3 83 Ω18.6 ×2mm
L9 stripline; note 3 83 Ω31.6 ×2mm
L10 stripline; note 3 83 Ω2×2mm
R1 0.4 W metal film resistor 274 Ω2322 151 72741
R2 0.4 W metal film resistor 1.96 kΩ2322 151 71962
R3 0.4 W metal film resistor 1 MΩ2322 151 71005
R4 cermet potentiometer 5 kΩ
R5 0.4 W metal film resistor 7.5 kΩ2322 151 77502
R6 1 W metal film resistor 10 Ω2322 153 51009
2003 Sep 02 9
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
Fig.12 Component layout for 500 MHz test circuit.
The circuit and components are situated on one side of the printed-circuit board, the other side being fully
metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets
for a direct contact between upper and lower sheets.
a
ndbook, full pagewidth
MBA381
+VDS
R4
L1
C1
C2
L2
C3
L3
C4
R3
C7
R2 C5
R1
L4 L5
C8
R6 L7
C9
C10
C11
C13
C12 L10
C14
C15
L8
C6
L9
L6
handbook, full pagewidth
MBA380
150 mm
70
mm
strap
rivets
rivets
rivets
strap strap
strap
mounting
screws
(6x)
2003 Sep 02 10
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
Fig.13 Input impedance as a function of frequency
(series components); typical values per
section.
Class-B operation; VDS = 12.5 V; IDQ =10mA;
R
GS = 274 Ω;P
L=2W.
handbook, halfpage
100
50
0
−50
−100 200
xi
ri
f (MHz)
Zi
(Ω)
300 500
400
MDA478
Fig.14 Load impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS = 12.5 V; IDQ = 10 mA;
RGS = 274 Ω;P
L=2W.
handbook, halfpage
100 200 300
ZL
(Ω)
f (MHz) 500
50
0
40
400
30
20
10
MDA477
XL
RL
Fig.15 Definition of MOS impedance.
handbook, halfpage
MBA379
ZiZL
Fig.16 Power gain as a function of frequency;
typical values.
Class-B operation; VDS = 12.5 V; IDQ = 10 mA;
RGS = 274 Ω;P
L=2W.
handbook, halfpage
100 200 300
Gp
(dB)
f (MHz) 500
20
0
16
400
12
8
4
MDA476
2003 Sep 02 11
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
BLF521 scattering parameters
VDS = 12.5 V; ID= 10 mA.; note 1
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunication/broadcast
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 1.00 −1.6 4.51 178.5 0.01 88.5 0.98 −2.0
10 1.00 −3.2 4.51 177.0 0.01 87.2 0.98 −4.0
20 1.00 −6.4 4.50 173.9 0.02 84.5 0.98 −8.0
30 1.00 −9.6 4.48 170.9 0.03 81.7 0.98 −12.0
40 0.99 −12.8 4.45 167.9 0.04 79.0 0.97 −16.0
50 0.99 −16.0 4.43 164.9 0.05 76.2 0.97 −19.9
60 0.98 −19.1 4.39 161.9 0.06 73.5 0.97 −23.8
70 0.97 −22.1 4.34 158.9 0.07 70.9 0.96 −27.6
80 0.97 −25.1 4.28 156.1 0.08 68.3 0.96 −31.3
90 0.96 −28.0 4.22 153.3 0.08 65.8 0.95 −34.9
100 0.95 −30.9 4.16 150.5 0.09 63.3 0.94 −38.5
125 0.92 −37.9 4.00 144.0 0.11 57.5 0.93 −47.1
150 0.90 −44.3 3.83 137.6 0.13 51.8 0.91 −55.2
175 0.87 −50.4 3.64 131.8 0.14 46.7 0.89 −62.7
200 0.85 −56.0 3.46 126.5 0.15 42.2 0.88 −69.6
250 0.80 −66.2 3.12 116.4 0.17 33.4 0.85 −81.9
300 0.77 −75.1 2.81 108.0 0.18 26.4 0.82 −92.3
350 0.74 −82.9 2.54 100.1 0.19 19.8 0.81 −101.3
400 0.72 −89.7 2.31 93.5 0.19 14.4 0.79 −108.9
450 0.70 −95.9 2.10 87.1 0.19 9.5 0.79 −115.5
500 0.69 −101.5 1.93 81.4 0.19 4.9 0.78 −121.2
600 0.69 −111.3 1.64 71.2 0.19 −2.6 0.78 −130.7
700 0.69 −119.9 1.41 62.2 0.18 −8.7 0.77 −138.5
800 0.69 −127.9 1.23 54.3 0.17 −13.6 0.78 −145.2
900 0.70 −135.1 1.08 47.3 0.15 −17.7 0.78 −151.4
1000 0.72 −142.0 0.97 40.9 0.14 −21.1 0.79 −156.9
2003 Sep 02 12
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT172D 97-06-28
H
b
b1
H
0 5 10 mm
scale
Q
A
D
D1c
Studless ceramic package; 4 leads SOT172D
1
2
3
4
UNIT A
mm
Db
3.31
3.04
b1
0.89
0.63 0.16
0.10 5.20
4.95 5.33
5.08 1.15
0.88
3.71
2.89
cD1H
26.17
24.63
inches 0.13
0.12 0.035
0.025 0.006
0.004 0.205
0.195 0.210
0.200 0.045
0.035
0.146
0.114 1.03
0.97
Q
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2003 Sep 02 13
Philips Semiconductors Product specification
UHF power MOS transistor BLF521
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/05/pp14 Date of release: 2003 Sep 02 Document order number: 9397 750 11587
