DATA SH EET
Product specification
Supersedes data of 1999 Apr 22 2002 May 28
DISCRETE SEMICONDUCTORS
BAT254
Schottky barrier diode
b
ook, halfpage
M3D154
2002 May 28 2
Philips Semiconductors Product specification
Schottky barrier diode BAT254
FEATURES
•Low forward voltage
•Guard ring protected
•Very small ceramic SMD package.
APPLICATIONS
•Ultra high-speed switching
•Voltage clamping
•Protection circuits
•Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
SMD package.
handbook, 4 columns
MAM214
ka
cathode mark
top viewside viewbottom view
ak
Fig.1 Simplified outline (SOD110) and symbol.
Marking code: L4.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage −30 V
IFcontinuous forward current −200 mA
IFRM repetitive peak forward current tp≤1s;δ≤0.5 −300 mA
IFSM non-repetitive peak forward current tp<10 ms −600 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
Tamb operating ambient temperature −65 +125 °C
2002 May 28 3
Philips Semiconductors Product specification
Schottky barrier diode BAT254
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
Note
1. Pulse test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD110 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
VFforward voltage see Fig.2
IF= 0.1 mA 240 mV
IF= 1 mA 320 mV
IF= 10 mA 400 mV
IF= 30 mA 500 mV
IF= 100 mA 800 mV
IRreverse current VR= 25 V; note 1; see Fig.3 2 µA
trr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.5
5ns
C
ddiode capacitance f = 1 MHz; VR= 1 V; see Fig.4 10 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to
ambient note 1 315 K/W
2002 May 28 4
Philips Semiconductors Product specification
Schottky barrier diode BAT254
GRAPHICAL DATA
handbook, halfpage
10
IF
VF (V)
3
10
(mA)
2
10
1
10
1
1.20.80.40
MSA892
(3)(2)(1)
(3)(2)(1)
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.2 Forward current as a function of forward
voltage; typical values.
0102030
V (V)
R
10
3
IR
(µA)
10
2
10
1
10
1
(1)
(2)
(3)
MSA893
(1) Tamb = 125 °C.
(2) Tamb =85°C.
(3) Tamb =25°C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
h
andbook, halfpage
0102030
0
5
10
15
VR (V)
Cd
(pF)
MSA891
f = 1 MHz; Tamb =25°C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values. Fig.5 Reverse recovery definitions.
h
andbook, halfpage
90%
10%
tf
Q
dI
dt
t
IF
IR
MRC129 - 1
F
r
2002 May 28 5
Philips Semiconductors Product specification
Schottky barrier diode BAT254
PACKAGE OUTLINE
UNIT A
max.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 1.6
D
2.10
1.90
y
0.1
E
1.40
1.10
DIMENSIONS (mm are the original dimensions)
SOD110 97-04-14
Very small ceramic rectangular surface mounted package SOD110
cathode
identifier
A
21
D
y
E
0 0.5 1 mm
scale
2002 May 28 6
Philips Semiconductors Product specification
Schottky barrier diode BAT254
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany otherconditionsabove thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveys nolicence ortitle
under any patent, copyright, or mask work right to these
products,and makes norepresentationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 May 28 7
Philips Semiconductors Product specification
Schottky barrier diode BAT254
NOTES
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613514/03/pp8 Date of release: 2002 May 28 Document order number: 9397 750 09733
