e 9 SEMICONDUCTOR Sanne S TECHNICAL DATA 2N3467, - 2N3468, oe in r- PNP Silico 0 >. i Smail-Signal Transistors . . designed for general-purpose Switching applications. CRYSTALONCS 2805 Veterans Hi Suite 14 ae Ronkonkoma, NY 4 1779 MAXIMUM RATINGS . Rating Symbol 2N3467 2N3468 Unit Coltector-Emitter Voitage VcEO 40 50 Vdc Collector-Base Voltage VcBo 40 50 Vde Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous ic 10 Ade Power Dissipation Pr @ Tq =25C : o Watts Derate above 25C a mwrc . 5.0 Watts @Tc =25'C 28.6 mee Derate above 25C CASE 79-04, STYLE 1 Operating Junction and Storage Ty. Tsig -65 to 200 C TO-205AD (TO-39) Tamperature Range ELECTRICAL CHARACTERISTICS | Ta = 25C unless otherwise noted.} Characteristic [_Symbot [ain [wax Unt OFF CHARACTERISTICS Collector-Emitter Breakdowrl Voitage(1) ViBR)CEO Vde (ig = 10 MAdc. Ig = 0) 2N3467 40 2N3468 50 > Coltector-Base Breakdown Voltage ViBR}CBO Vode (Ig = 10 pAde. tg = 0) 2N3467 40 _ 2N3468 50 - Eminer-Base Breakdown Voltage V(BR)EBO 5.0 ~ Vdc (IC = 10 wAde, Ig = 0) Collector Cutoff Current Icex - 0.1 pAde (VCE = 30 Vdc. Veg = 3.0 Vdc} Collector Cutof Current icBo pAdc (Vop = 30 Vdc) _ on (eB = 30 Vde, Ta = 150C) ~ 50 11) Pulsed. Pulse Width 250 to 350 4S. Duty Cycle 1 0 to 2 0%. (continusd)ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic [_symbor [| Min Max | Unit ON CHARACTERISTICS(1) DC Current Gain hee (Ig = 150 mAdc, Vce = 1.0 Vde) 2N3467 40 _ (ig = 500 mAde, Vog = 1.0 Vdc) 40 120 (ig = 1000 mAde, VCE = 5.0 Vde) 40 _ {ig = 150 mAdc, VE = 1.0 Vde, Ta = 55C) 16 - (ig = 150 mAdc, VcE = 1.0 Vac) 2N3468 25 _ (Ig = 500 mAdc, VcE = 1.0 Vde) 25 75 (ig = 1000 mAde, VcE = 5.0 Vde} . lig = 150 mAde, VoE = 1.0 Vde, Ta = ~85C) ~ Collector-Emitter Saturation Voltage Voe(sat) Vde (ig = 150 mAde, Ip = 15 mAdc) ~ 0.35 {ig = 500 mAdc, Ip = 50 mAdc} _ 06 (Ii = 1000 mAde, @y = 100 mAdc} _ 12 Base-Emitter Saturation Voltage VBE(sat) Vde {ig = 150 mAde. Ig = 15 mAdc) = 10 (Ig = 500 mAdc, Ig = 50 mAdc) 08 12 (I = 1000 mAdc. Ip = 100 mAdc) a 1.6 SMALL-SIGNAL CHARACTERISTICS Output Capacitance (Vcp = 10 Vdc, t = 0.1 to 1.0 MHz) Cobo = 25 pF Input Capacitance (Vep = 0.5 Vdc, # = 0.1 to 1.0 MHz) Cito _ 100 pF Current-Gain Bandwidth Product 2N3467 tT 176 500 MHz (ig = 50 mAde, Vcg = 10 Vde, f = 100 MHz) 2N3468 150 500 SWITCHING CHARACTERISTICS (See Figure 37) Delay Time | ta - 10 ns Rise Time tr a 30 ns Storage Time ts 60 ns Fall Time tt a 30 ns ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Vp = 30 Vde 2N3467, 40 Vdc 2N3468 Pr =1.0W initial and End Point Limits Characteristics Tested Symbol Min Max Unit Collector Cuto#t Current ICEO ad 100 nAdc (Vcp = 30 Vdc) DC Current Gain(") nee _ Ig = 500 mAde, Ve = 1 0 Vdc) 2N3467 40 120 2N3468 25 75 Delta from Pre-Burn-In Measured Values Min Max Delta Collector Cutolt Current MIcBO oo +100 % of Initial Value or +50 nAdc whichever 1s greater eE + Delta DC Current Gain(") shee - (25 % of Initial Value (1) Pulsed Pulse Widih 250 to 350 15, Quly Cyne Pte 2