2N6036 2N6039 Complementary power Darlington transistors Features . Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 Linear and switching industrial equipment 2 1 SOT-32 Description The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. Figure 1. Internal schematic diagram R1 typ. = 15 k Table 1. R2 typ. = 100 Device summary Order codes Marking Polarity Package Packaging 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube May 2009 Doc ID 5064 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 2N6036, 2N6039 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Unit 80 V Collector-base voltage (IE = 0) VCEO Collector-emitter voltage (IB = 0) VEBO Emitter-base voltage (IC = 0) 5 V Collector current 4 A Collector peak current 8 A Base current 0.1 A PTOT Total dissipation at Tcase = 25C 40 W TSTG Storage temperature -65 to 150 C 150 C ICM IB TJ 2/10 Value VCBO IC Note: Parameter Max. operating junction temperature For PNP types voltage and current values are negative. Doc ID 5064 Rev 5 2N6036, 2N6039 2 Electrical characteristics Electrical characteristics (Tcase = 25 C; unless otherwise specified) Table 3. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit ICEV Collector cut-off current (VBE = -1.5 V) VCE = 80 V VCE = 80 V, Tc = 125 C - 0.1 0.5 mA mA ICBO Collector cut-off current (IE = 0) VCB = 80 V - 0.1 mA ICEO Collector cut-off current (IB = 0) VCE = 80 V - 0.1 mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 2 mA Collector-emitter sustaining voltage IC = 100 mA VCEO(sus)(1) 80 - V VCE(sat)(1) Collector-emitter saturation IC = 2 A voltage IC = 4 A IB = 8 mA - 2 IB = 40 mA - 3 VBE(sat)(1) Base-emitter saturation voltage IC = 4 A IB = 40 mA - 4 V VBE(on) Base-emitter on voltage IC = 2 A VCE = 3 V - 2.8 V IC = 0.5 A_ _ VCE = 3 V 500 - IC = 2 A_ VCE = 3 V 750 - IC = 4 A_ _ VCE = 3 V 100 - IC = 0.75 A_ f = 1 MHz VCE = 10 V 25 - hFE(1) hfe CCBO DC current gain Small signal current gain VCB = 10 V Collector base capacitance for 2N6036 (IE = 0) for 2N6039 V 15000 f = 0.1 MHz - 100 200 pF pF 1. Pulsed duration = 300 s, duty cycle 1.5%. Note: For PNP types voltage and current values are negative. Doc ID 5064 Rev 5 3/10 Electrical characteristics 2.1 4/10 2N6036, 2N6039 Typical characteristic (curves) Figure 2. DC current gain (VCE = 3 V NPN) Figure 3. DC current gain (VCE = - 3 V PNP) Figure 4. DC current gain (VCE = 5 V NPN) Figure 5. DC current gain (VCE = - 5 V PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) Doc ID 5064 Rev 5 2N6036, 2N6039 Figure 8. Electrical characteristics Base-emitter saturation voltage (NPN) Figure 10. Base-emitter on voltage (NPN) Figure 9. Base-emitter saturation voltage (PNP) Figure 11. Base-emitter on voltage (PNP) Figure 12. Resistive load switching time Figure 13. Resistive load switching time (NPN, on) (PNP, on) Doc ID 5064 Rev 5 5/10 Electrical characteristics 2N6036, 2N6039 Figure 14. Resistive load switching time Figure 15. Resistive load switching time (NPN, off) (PNP, off) 6/10 Doc ID 5064 Rev 5 2N6036, 2N6039 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Doc ID 5064 Rev 5 7/10 Package mechanical data 8/10 2N6036, 2N6039 Doc ID 5064 Rev 5 2N6036, 2N6039 4 Revision history Revision history Table 4. Document revision history Date Revision Changes 21-Jun-2004 4 Document migration, no content change. 20-May-2009 5 Modified SOT-32 mechanical data. Doc ID 5064 Rev 5 9/10 2N6036, 2N6039 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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