IXA12IF1200PB - IXYS SEMICONDUCTOR

IXA12IF1200PB

preliminary

Copack

XPT IGBT

2(C)

3(E)

(G) 1

Part number

IXA12IF1200PB

Backside: collector

C25

CE(sat)

VV1.8

CES

20

1200

=

V= V

I= A

Features / Ad vantages: Applications: Package:

● Easy paralleling due to the positive temperature

coefficient of the on-state voltage

● Rugged XPT design (Xtreme light Punch Through)

results in:

- short circuit rated for 10 µsec.

- very low gate charge

- low EMI

- square RBSOA @ 3x Ic

● Thin wafer technology combined with the XPT design

results in a competitive low VCE(sat)

● SONIC™ diode

- fast and soft reverse recovery

- low operating forward voltage

● AC motor drives

● Solar inverter

● Medical equipment

● Uninterruptible power supply

● Air-conditioning systems

● Welding equipment

● Switched-mode and resonant-mode

power supplies

● Inductive heating, cookers

● Pumps, Fans

TO-220

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

IXYS reserves the right to change limits, conditions and dimensions. 20110330aData according to IEC 60747and per semiconductor unless otherwise specified

IXA12IF1200PB

preliminary

-di /dt = A/µs

T = °C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collect or current A

20

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions Unit

13

V

CE(sat)

total power dissipation 85 W

collector emitter leakage current

6.5 V

turn-on delay time 70 ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient ga te emitte r vo l t a g e

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

30

±30

T = °C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current V = ±20 V

GE

2.1

5.95.4

mA

0.1 mA

0.1

500

G(on)

total gate charge V = V; V = 15 V; I = A

CE

Q

GE C

27 nC

t

E

d(on)

r

d(off)

f

on

off

40 ns

250 ns

100 ns

1.1 mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEmax

1200

short circuit safe operating area

µs

SCSOA

10T = °C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

40 A

R

thJC

thermal resistance junction to case 1.5 K/W

V

RRM

V1200

max. repetitive rev ers e voltage T = 25°C

VJ

T = 25°C

forward current A

22

A

C

14T = °C

C

I

F25

I

F

T = 25°C

forward voltage V

2.20

V

VJ

1.95T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current mA

*

mA

VJ

*T = 125°C

VJ

I

RR RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

1.3 µC

10.5 A

350 ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I = A; V = 0 V

F

FGE

E

rec

0.35 mJ

reverse recovery energy

R

thJC

thermal resistance junction to case 1.8 K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = °C

VJ

10

0.3

10

100

600

900

-250

600

I

CM

1.8

R

thCH

thermal resistance case to heatsink K/W

R

thCH

thermal resistance case to heatsink K/W

* not applicable, see Ices value above

IGBT

Diode

600 V

V = V

CEmax

900

100

125

nA

0.50

IXYS reserves the right to change limits, conditions and dimensions. 20110330aData according to IEC 60747and per semiconductor unless otherwise specified

IXA12IF1200PB

preliminary

Ratings

XXXXXX

Zyyww

Logo

Part Number

Date Code

Lot #

abcdef

Product Markin

g

A

ssembly Line

I

X

A

12

IF

1200

PB

Part number

IGBT

XPT IGBT

Gen 1 / std

Copack

TO-220AB (3)

=

IXA12IF1200TC TO-268AA (D3Pak) (2) 1200

Current Rating [A]

Reverse Voltage [V]

=

Package

T

op

°C

M

D

Nm0.6

mounting torque 0.4

T

VJ

°C150

virt ua l j un ctio n temp eratu re -40

Weight g2

Symbol Definition typ. max.min.Conditions

operation temperature

Unit

F

C

N60

mount ing for ce w i th cli p 20

I

RMS

RMS current 35 A

per terminal

125-40

TO-220

Similar Part Package Voltage class

IXA12IF1200HB TO-247AD (3) 1200

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

IXA12IF1200PB 507428Tube 50IXA12IF1200PBStandard

T

stg

°C150

storage temperature -40

threshold voltage V

mΩ

V

0 max

R

0 max

slope resistance *

1.1

153

1.25

85

Equivalent Circuits for Simulation

T =

VJ

IV

0

R

0

IGBT Diode

150 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions. 20110330aData according to IEC 60747and per semiconductor unless otherwise specified

IXA12IF1200PB

preliminary

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.32 4.82 0.170 0.190

A1 1.14 1.39 0.045 0.055

A2 2.29 2.79 0.090 0.110

b 0.64 1.01 0.025 0.040

b2 1.15 1.65 0.045 0.065

C 0.35 0.56 0.014 0.022

D 14.73 16.00 0.580 0.630

E 9.91 10.66 0.390 0.420

e 2.54 BSC 0.100 BSC

H1 5.85 6.85 0.230 0.270

L 12.70 13.97 0.500 0.550

L1 2.79 5.84 0.110 0.230

ØP 3.54 4.08 0.139 0.161

Q 2.54 3.18 0.100 0.125

3x b2

E

ØP

Q

D

L1

L

3x b 2x e C

A2

H1

A1

A

123

4

2(C)

3(E)

(G) 1

Outlines TO-220

IXYS reserves the right to change limits, conditions and dimensions. 20110330aData according to IEC 60747and per semiconductor unless otherwise specified

IXA12IF1200PB

preliminary

0123

0

4

8

12

16

20

048121620

0.0

0.5

1.0

1.5

2.0

2.5

3.0

01234

0

4

8

12

16

20

V

CE

[V]

I

C

[A]

9V

11 V

5678910111213

0

4

8

12

16

20

0102030

0

5

10

15

20

V

GE

[V]

T

VJ

= 25°C

T

VJ

= 125°C

T

VJ

= 25°C

13 V

80 120 160 200 240

0.8

1.0

1.2

1.4

1.6

1.8

E

[mJ]

E

on

Fig. 1 Typ. output characteristics

V

CE

[V]

I

C

[A]

V

GE

=15V

17 V

19 V

Fig. 2 Typ. output characteristics

I

C

[A]

Fig. 3 Typ. tranfer characteristic

s

V

GE

[V]

Fig. 4 Typ. turn-on gate charge

E

off

Q

G

[nC] R

G

[ ]

E

[mJ]

I

C

[A]

E

on

E

off

I

C

=10A

V

CE

= 600 V

V

GE

= ±15 V

T

VJ

= 125°C

R

G

= 100

V

CE

= 600 V

V

GE

=±15 V

T

VJ

=125°C

I

C

=10A

V

CE

=600V

V

GE

=15V

T

VJ

=125°C

T

VJ

=125°C

Fig. 5 Typ. switching energy

vs. collector current

Fig. 6 Typ. switching energy

vs. gate resistance

Fig. 7 Typ. transient thermal impedance junction to case

IGBT

IXYS reserves the right to change limits, conditions and dimensions. 20110330aData according to IEC 60747and per semiconductor unless otherwise specified

IXA12IF1200PB

preliminary

200 250 300 350 400 450 500

0.0

0.4

0.8

1.2

1.6

2.0

2.4

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

5

10

15

20

Q

rr

[μC]

I

F

[A]

V

F

[V] di

F

/dt [A/μs]

T

VJ

=125°C

T

VJ

= 25°C

T

VJ

= 125°C

V

R

=600 V

5A

10 A

20 A

Fig. 1 Typ. forward current

versus V

F

Fig. 2 Typical reverse recov. charge

Q

rr

versus. di

F

/dt

200 250 300 350 400 450 500

8

12

16

20

24

I

RM

[A]

di

F

/dt [A/μs]

T

VJ

=125°C

V

R

= 600 V

5A

10 A

20 A

Fig.3 Typ: peak reverse current

I

RR

versus di

F

/dt

200 250 300 350 400 450 500

100

200

300

400

500

t

rr

[ns]

di

F

/dt [A/μs]

5A

10 A

20 A

T

VJ

= 125°C

V

R

=600V

Fig. 5 Typ. recovery time

t

rr

versus di

F

/dt

Fig. 6 Typ. recovery energy

E

rec

vs. di

F

/dt

200 250 300 350 400 450 500

0.1

0.2

0.3

0.4

0.5

0.6

E

rec

[mJ]

di

F

/dt [A/μs]

T

VJ

= 125°C

V

R

= 600 V

5A

10 A

20 A

Fig. 4 Dynamic parameters

Q

rr

,I

RM

versus T

VJ

Fig. 7 Typ. transient thermal impedance junction to case

Diode

IXYS reserves the right to change limits, conditions and dimensions. 20110330aData according to IEC 60747and per semiconductor unless otherwise specified