MMBT5551
160V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Features
• BVCEO > 160V
• Ideal for Low Power Amplificat i on and Switching
• Complementary P NP Type Available (MMBT5401)
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliabili ty
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” molding compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivi t y: Level 1 per J-STD-020
• Terminals: Finish-Matte Tin Plated Leads. Solderable per MIL-
STD-202, Method 208
• Weight: 0.008 grams (approxim at e)
Ordering Information (Note 4)
Part Number
Compliance
Marking
Reel size (inches)
Tape width (mm)
MMBT5551-7-F
AEC-Q101
K4N
7
8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead -free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marki ng I nform ation
Date Code Key
Year
2010
2011
2012
2013
2014
2015
2016
2017
Code
X
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Device Symbol
C
E
B
SOT23
C
E
B
Top View
Pin-Out
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
MMBT5551
Document number: DS30061 Rev. 12 - 2 1 of 6
www.diodes.com August 2014
© Diodes Incorporated
MMBT5551
Absolute Maximum Ratings (@TA = +25°C unless otherwise specified)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Collect or Current - Conti nuous (Note 1)
IC
600
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
300
mW
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
417
°C/W
Operating and Storage Tem perature Range
TJ, TSTG
-55 to +150
°C
ESD Rating s (Note 6)
Characteristic
Symbol
Value
Unit
JEDEC Cl a ss
Electrostat ic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostat ic Discharge - Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
400
0
MMBT5551
Document number: DS30061 Rev. 12 - 2 2 of 6
www.diodes.com August 2014
© Diodes Incorporated
MMBT5551
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CH ARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
V(BR)CBO
180
V
IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
V
IC = 1.0mA, I B = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10µA, IC = 0
Collect or Cutoff Current ICBO 50
nA
µA
V
CB
= 120V, I
E
= 0
VCB = 120V, IE = 0 , T A = 100
°
C
Emitter Cutoff Current
IEBO
50
nA
VEB = 4.0V, IC = 0
ON CHARACTERIS TICS (Note 7)
DC Current Gain hFE 80
80
30
250
I
C
= 1.0mA, V
CE
= 5.0V
IC = 10m A, VCE = 5.0V
IC = 50m A, VCE = 5.0V
Collector-Emitter Saturation Voltage VCE(SAT)
0.15
0.20 V
I
C
= 1 0mA, I
B
= 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(SAT) 1.0 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SM ALL SIGNAL CHARACTERISTICS
Output Capacit ance
Cobo
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gai n hfe 50 250
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product fT 100 300 MHz
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
Noise Figure nF 8.0 dB
V
CE
= 5 .0V, I
C
= 200µA,
RS = 1.0kΩ, f = 1.0kHz
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT5551
Document number: DS30061 Rev. 12 - 2 3 of 6
www.diodes.com August 2014
© Diodes Incorporated
MMBT5551
Typical Electrical Characteristics (@TA = +25°C, unless otherwise s pecifi ed. )
1
10
1,000
100
110 100
h , DC CURRENT GAIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current G ain vs. Collector Cur rent
C
V = 5V
CE
T = 150°C
A
T = 25°C
AT = -50°C
A
0.04
0.05
0.06
0.07
0.08
0.09
0.15
0.14
0.13
0.12
0.11
0.10
110 100 1,000
V, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 110 100
V , BASE-EMITTER TURN-ON VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitt er T urn-O n Voltage
vs. Collector Current
C
V = 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1,000
100
110 100
f , GAIN-BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Gain-Bandwidth Product vs.
Collector Current
C
V = 5V
CE
MMBT5551
Document number: DS30061 Rev. 12 - 2 4 of 6
www.diodes.com August 2014
© Diodes Incorporated
MMBT5551
Package Ou t lin e Dim en sio ns
Please see AP02002 at http://www.diodes.c om/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02002 at http://www.diodes.c om/datasheets/ap02002.pdf for latest version.
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
8°
All Dimensions in mm
Dimensions
Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
XE
Y
C
Z
J
K1 K
L1
H
L
M
All 7°
A
CB
D
a
MMBT5551
Document number: DS30061 Rev. 12 - 2 5 of 6
www.diodes.com August 2014
© Diodes Incorporated
MMBT5551
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICT ION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark ri ghts, nor the rights of others. Any Customer or user of this document or products described herein in such applicat ions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harml ess against all damages.
Diodes Incorporated does not warrant or acc ept any li ability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Cust omers purchase or use Diodes Inc orporated products f or any unintended or unauthorized applicati on, Customers shall indemnif y and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirect l y, any claim of personal injury or death associat ed with such unintended or unauthorized appl i cation.
Products desc ribed herein may be covered by one or more United St ates, international or foreign patents pending. Product names and m arkings
noted herein may also be covered by one or more United States, international or f orei gn trademarks.
This document is written i n English but may be translated int o multiple languages for reference. Only the English version of this document is the
final and determinative f orm at released by Diodes I ncorporat ed.
LIFE SU PP O R T
Diodes Inc orporated products are s pecifically not authorized for use as critic al components in lif e support devices or s ystems without the e xpress
written approval of the Chief Executive Off icer of Diodes I ncorporat ed. As us ed herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expect ed to result in signifi cant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectivenes s.
Customers repres ent that they have all necessary expertis e in the safety and regulatory ramif ications of their life support devices or sys tems, and
acknowledge and agree t hat they are sol el y res ponsible for all l egal , regul atory and safet y -related requirements conc erni ng their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representati ves against any dam ages arising out of the use of Diodes Incorporat ed products i n such safety-cri tical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
MMBT5551
Document number: DS30061 Rev. 12 - 2 6 of 6
www.diodes.com August 2014
© Diodes Incorporated