TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/461
Devices Qualified Level
2N6211 2N6212 2N6213
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
2N6211
2N6212
2N6213
Unit
Collector-Emitter Voltage VCEO 225 300 350 Vdc
Collector-Base Voltage VCBO 275 350 400 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Base Current IB 1.0 Adc
Collector Current IC 2.0 Adc
Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2) PT 3.0
35 W
W
Operating & Storage Temperature Top, Tstg
-55 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol
Max. Unit
Thermal Resistance Junction-to-Case RθJC 5.0 0C/W
1) Derate linearly 17.1 mW/0C for TA > +250C
2) Derate linearly 200 mW/0C for TC > +250C
TO-66*
(TO-213AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz 2N6211
2N6212
2N6213
V(BR)CEO
225
300
350
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω 2N6211
2N6212
2N6213
V(BR)CER
250
325
375
Vdc
Collector-Emitter Breakdown Voltage
IC = 200 mAdc, f = 30-60 Hz, RBE = 50 Ω, VBE = -1.5 Vdc
2N6211
2N6212
2N6213
V(BR)CEX
275
350
400
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6211, 2N6212, 2N6213 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Collector-Emitter Cutoff Current
VCE = 150 Vdc ICEO 5.0 mAdc
Collector-Emitter Cutoff Current
VCE = 250 Vdc, VBE = 1.5 Vdc 2N6211
VCE = 315 Vdc, VBE = 1.5 Vdc 2N6212
VCE = 360 Vdc, VBE = 1.5 Vdc 2N6213
ICEX
0.5
0.5
0.5
mAdc
Collector-Base Cutoff Current
VCB = 275 Vdc 2N6211
VCB = 350 Vdc 2N6212
VCB = 400 Vdc 2N6213
ICBO
15
15
15
mAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc IEBO 0.5 mAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.8 Vdc 2N6211
IC = 1.0 Adc, VCE = 3.2 Vdc 2N6212
IC = 1.0 Adc, VCE = 4.0 Vdc 2N6213
IC = 1.0 Adc, VCE = 5.0 Vdc 2N6211
2N6212
2N6213
hFE
10
10
10
30
30
30
100
100
100
175
175
150
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc 2N6211
2N6212
2N6213
VCE(sat)
1.4
1.6
2.0
Vdc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.125 Adc VBE(sat) 1.4 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 0.2 Adc, VCE = 10 Vdc, f = 5.0 MHz hfe 4.0 20
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 220 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc ton 0.6 µs
Turn-Off Time
VCC = 200 ± 10 Vdc; IC = 1.0 Adc; IB1 = -0.125 Adc, IB2 = 0.125Adc toff 3.1 µs
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 17.5 Vdc, IC = 2.0 Adc All Types
Test 2
VCE = 40 Vdc, IC = 0.875 Adc All Types
Test 3
VCE = 225 Vdc, IC = 0.034 Adc 2N6211
Test 4
VCE = 300 Vdc, IC = 0.02 Adc 2N6212
Test 5
VCE = 350 Vdc, IC = 0.015 Adc 2N6213
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
