
2N3467
2N3468
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3467 and
2N3468 are silicon PNP switching transistors designed
for core driver applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N3467 2N3468 UNITS
Collector-Base Voltage VCBO 40 50 V
Collector-Emitter Voltage VCEO 40 50 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.0 A
Power Dissipation PD 1.0 W
Power Dissipation (TC=25°C) PD 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 175 °C/W
Thermal Resistance ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3467 2N3468
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=30V - 100 - 100 nA
ICBO V
CB=30V, TA=100°C - 15 - 15 µA
ICEV V
CE=30V, VBE=3.0V - 100 - 100 nA
IBEV V
CE=30V, VBE=3.0V - 120 - 120 nA
BVCBO I
C=10A 40 - 50 - V
BVCEO I
C=10mA 40 - 50 - V
BVEBO I
E=10A 5.0 - 5.0 - V
VCE(SAT) I
C=150mA, IB=15mA - 0.3 - 0.36 V
VCE(SAT) I
C=500mA, IB=50mA - 0.5 - 0.6 V
VCE(SAT) I
C=1.0A, IB=100mA - 1.0 - 1.2 V
VBE(SAT) I
C=150mA, IB=15mA - 1.0 - 1.0 V
VBE(SAT) I
C=500mA, IB=50mA 0.8 1.2 0.8 1.2 V
VBE(SAT) I
C=1.0A, IB=100mA - 1.6 - 1.6 V
hFE V
CE=1.0V, IC=150mA 40 - 25 -
hFE V
CE=1.0V, IC=500mA 40 120 25 75
hFE V
CE=5.0V, IC=1.0A 40 - 20 -
TO-39 CASE
R2 (26-July 2013)
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