1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com Vishay Semiconductors
Rev. 1.7, 12-Sep-12 1Document Number: 86000
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed axial-leaded glass
envelope
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Rectification diode, general purpose
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
1N5062 1N5062TR 5000 per 10" tape and reel 25 000
1N5062 1N5062TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
1N5059 VR = 200 V; IF(AV) = 2 A SOD-57
1N5060 VR = 400 V; IF(AV) = 2 A SOD-57
1N5061 VR = 600 V; IF(AV) = 2 A SOD-57
1N5062 VR = 800 V; IF(AV) = 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage See electrical characteristics
1N5059 VR = VRRM 200 V
1N5060 VR = VRRM 400 V
1N5061 VR = VRRM 600 V
1N5062 VR = VRRM 800 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
Average forward current TthJA = 45 K/W, Tamb = 50 °C IF(AV) 2A
TthJA = 100 K/W, Tamb = 75 °C IF(AV) 0.8 A
Pulse energy in avalanche mode, non
repetitive (inductive load switch off) I(BR)R = 1 A, inductive load ER20 mJ
Junction and storage temperature range Tj = Tstg - 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W
On PC board with spacing 25 mm RthJA 100 K/W
1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com Vishay Semiconductors
Rev. 1.7, 12-Sep-12 2Document Number: 86000
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Forward Current vs. Forward Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX UNIT
Forward voltage IF = 1 A VF--1V
IF = 2.5 A VF- - 1.15 V
Reverse current
VR = VRRM IR--1μA
VR = VRRM, Tj = 100 °C IR- - 10 μA
VR = VRRM, Tj = 150 °C IR- - 100 μA
Breakdown voltage IR = 100 μA
1N5059 V(BR)R 225 - 1600 V
1N5060 V(BR)R 450 - 1600 V
1N5061 V(BR)R 650 - 1600 V
1N5062 V(BR)R 900 - 1600 V
Diode capacitance VR = 0 V, f = 1 MHz CD-40-pF
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr --4μs
0
40
80
120
160
200
25 50 75 100 125 150 175
Tj- Junction Temperature ( °C)
15764
VR=V
RRM
P - Reverse Power Dissipation ( mW )
R
160 K/W
100 K/W
45 K/W
RthJA =
1N5062
1N5061
1N5060
1N5059
0.1
1
10
100
1000
15765
VR=V
RRM
I - Reverse Current ( µA)
R
25 50 75 100 125 150 175
Tj- Junction Temperature ( °C)
15763_1
V
R =V
RRM
half sinewave
R
thJA
=4 5 K/W
l =10 mm
R
thJA
= 100 K/W
PCB :d=2 5m m
02 04 06 08 0 100 120 140 160 180
T
amb
- Ambient T emperature (°C)
0.0
1.0
1.5
2.0
2.5
3.0
I- Average Forward Current (A)
FA V
0.5
I - Forward Current ( A )
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
F
- Forward Voltage(V)
15762
F
T
j
=25°C
T
j
=175°C
0.01
0.1
1
10
100
0.001
1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com Vishay Semiconductors
Rev. 1.7, 12-Sep-12 3Document Number: 86000
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
10
20
30
40
50
0.1 1 10 100
VR-ReverseVoltage(V)15766
C - Diode Capacitance ( pF )
D
f=1MHz
20543
3.6 (0.142) max.
26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
0.82 (0.032) max.
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Revision: 12-Mar-12 1Document Number: 91000
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