BC546,A,B
BC547,A,B,C
BC548,A,B,C
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC546, BC547,
BC548 series devices are silicon NPN small signal
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-92-18R CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL BC546 BC547 BC548 UNITS
Collector-Base Voltage VCBO 80 50 30 V
Collector-Emitter Voltage VCES 80 50 30 V
Collector-Emitter Voltage VCEO 65 45 30 V
Emitter-Base Voltage VEBO 6.0 6.0 5.0 V
Continuous Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Peak Emitter Current IEM 200 mA
Power Dissipation PD 500 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 250 °C/W
Thermal Resistance ΘJC 150 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=30V 15 nA
ICBO V
CB=30V, TA=150°C 5.0 μA
VCE(SAT) I
C=10mA, IB=0.5mA 250 mV
VCE(SAT) I
C=100mA, IB=5.0mA 600 mV
VBE(SAT) I
C=10mA, IB=0.5mA 700 mV
VBE(SAT) I
C=100mA, IB=5.0mA 900 mV
VBE(ON) V
CE=5.0V, IC=2.0mA 580 700 mV
VBE(ON) V
CE=5.0V, IC=10mA 770 mV
hFE V
CE=5.0V, IC=10μA (BC546,A, BC547,A, BC548,A) 90
hFE V
CE=5.0V, IC=10μA (BC546B, BC547B, BC548B) 150
hFE V
CE=5.0V, IC=10μA (BC547C, BC548C) 270
hFE V
CE=5.0V, IC=2.0mA (BC546) 110 450
hFE V
CE=5.0V, IC=2.0mA (BC546A, BC547A, BC548A) 110 220
hFE V
CE=5.0V, IC=2.0mA (BC546B, BC547B, BC548B) 200 450
hFE V
CE=5.0V, IC=2.0mA (BC547, BC548) 110 800
hFE V
CE=5.0V, IC=2.0mA (BC547C, BC548C) 420 800
hfe V
CE=5.0V, IC=2.0mA, f=1.0kHz 125 900
fT V
CE=5.0V, IC=10mA, f=35MHz 300 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 2.5 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz 9.0 pF
NF VCE=5.0V, IC=0.2mA, RG=2.0kΩ,
B=200Hz, f=1.0kHz 2.0 10 dB
R1 (13-December 2013)
www.centralsemi.com
BC546,A,B
BC547,A,B,C
BC548,A,B,C
SILICON
NPN TRANSISTORS
LEAD CODE:
1) Collector
2) Base
3) Emitter
MARKING:
FULL PART NUMBER
TO-92-18R CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (13-December 2013)
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
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(001)
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