Glass Silicon Zener Diode
Voltage: 2.4 to 75 Volts
Power: 0.5 Watts
RoHS Device
Page 1
REV: B
1N5221B-G Thru. 1N5267B-G
Parameter Symbol Value Unit
Maximum Ratings and Electrical Characteristics
Dimensions in inches and (millimeter)
DO-35
QW-BZ001
0.165(4.20)Max.
1.02(26.00) Min.
0.079(2.00)Max.
0.020(0.52)Typ.
1.02(26.00) Min.
Features
-Planar Die Construction
-500mW Power Dissipation
-Ideally Suited for Automated Assembly Processes
Mechanical data
-Case: Molded plastic, DO-35
-Polarity: Indicated by cathode band
-Marking: Type number
-Weight: 0.13gram
Power dissipation at Tamb=25°C
Junction temperature
Storage temperature range
PToT
TJ
TSTG
500
175
-65 ~ +175
mW
°C
°C
Parameter Symbol Max Unit
Thermal resistance (junction to ambient air) RθJA 0.3*
Min
Comchip
S M D D i o d e S p e c i a l i s t
-Terminals : Solderable per MIL-STD-750,Method
Method 2026
Forward voltage at IF = 200mA VF 1.1 V
K/mW
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
(TA=25°C, unless otherwise noted)
Glass Silicon Zener Diode
Page 2
REV: B
Electrical Characteristics (1N5221B-G Thru. 1N5267B-G)
QW-BZ001
Nominal Zener Voltage Maximum Zener Impedance
Vz @ IZT Zzk @ IzkIR @ VR
Nom.V mAΩ Ω μA V
1N5221B-G 2.4 2030 1200 100 1
1N5222B-G 2.5 2030 1250 100 1
1N5223B-G 2.7 2030 1300 75 1
1N5224B-G 2.8 2030 1400 75 1
1N5225B-G 3.0 2029 1600 50 1
1N5226B-G 3.3 2028 1600 25 1
1N5227B-G 3.6 2024 1700 15 1
1N5228B-G 3.9 2023 1900 10 1
1N5229B-G 4.3 2022 2000 5 1
1N5230B-G 4.7 2019 1900 5 2
1N5231B-G 5.1 2017 1600 5 2
1N5232B-G 5.6 2011 1600 5 3
1N5233B-G 6.0 207 1600 5 3.5
1N5234B-G 6.2 207 1000 5 4
1N5235B-G 6.8 205 750 3 5
1N5236B-G 7.5 206 500 3 6
1N5237B-G 8.2 208 500 3 6.5
1N5238B-G 8.7 208 600 3 6.5
1N5239B-G 9.1 2010 600 3 7
1N5240B-G 10 2017 600 3 8
1N5241B-G 11 2022 600 2 8.4
1N5242B-G 12 2030 600 1 9.1
1N5243B-G 13 9.513 600 0.5 9.9
1N5244B-G 14 915 600 0.1 10
1N5245B-G 15 8.516 600 0.1 11
1N5246B-G 16 7.817 600 0.1 12
1N5247B-G 17 7.419 600 0.1 13
1N5248B-G 18 721 600 0.1 14
1N5249B-G 19 6.623 600 0.1 14
1N5250B-G 20 6.225 600 0.1 15
1N5251B-G 22 5.629 600 0.1 17
1N5252B-G 24 5.233 600 0.1 18
1N5253B-G 25 535 600 0.1 19
1N5254B-G 27 4.641 600 0.1 21
1N5255B-G 28 4.544 600 0.1 21
1N5256B-G 30 4.249 600 0.1 23
1N5257B-G 33 3.858 700 0.1 25
1N5258B-G 36 3.470 700 0.1 27
1N5259B-G 39 3.280 800 0.1 30
1N5260B-G 43 393 900 0.1 33
1N5261B-G 47 2.7105 1000 0.1 36
1N5262B-G 51 2.5125 1100 0.1 39
1N5263B-G 56 2.2150 1300 0.1 43
1N5264B-G 60 2.1170 1400 0.1 46
1N5265B-G 62 2185 1400 0.1 47
1N5266B-G 68 1.8230 1600 0.1 52
1N5267B-G 75 1.7270 1700 0.1 56
Maxumum Reverse
Leakage Current
Part No.
O
(1)Base on DC measurement at thermal equilibrium; lead length=9.5(3/8"); thermal resistance of heat sink=30 C/W
Comchip
S M D D i o d e S p e c i a l i s t
Min.V Max.V
2.28
2.38
2.57
2.66
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.70
5.89
6.46
7.13
7.79
8.27
8.65
9.50
10.45
11.40
12.35
13.30
14.25
15.20
16.15
17.10
18.05
19.00
20.90
22.80
23.75
25.65
26.60
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
57.00
58.90
64.60
71.25
2.52
2.63
2.84
2.94
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.30
6.51
7.14
7.88
8.61
9.14
9.56
10.50
11.55
12.60
13.65
14.70
15.75
16.80
17.85
18.90
19.95
21.00
23.10
25.20
26.25
28.35
29.40
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
63.00
65.10
71.40
78.75
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Marking Code
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
ZzT @ IzT
Glass Silicon Zener Diode
Page 3
REV: B
Characteristics Curves (1N5221B-G Thru. 1N5267B-G)
QW-BZ001
Comchip
S M D D i o d e S p e c i a l i s t
Fig.2 - Breakdown Characteristics
0 5 10 15 20
0
20
40
Vz, (V)
Iz, (mA)
10
30
50
25 30
Test Current
Iz = 20mA
Fig.1- Power Derating Curve
0 50 100 150 200 250
0
200
400
600
Ambient Temperature, ( °C )
Power Dissipation, ( mW )
100
300
500
Glass Silicon Zener Diode Comchip
S M D D i o d e S p e c i a l i s t
Page 3
REV: B
QW-BZ001
B
Taping Specification For Axial Lead Diodes
L1
L2
E A Z
T
E
Standard Packaging
90℃±5℃
B Z T E L1-L2
DO-35
SYMBOL
A
(mm)
(inch) 0.039 (max)
5.00 ± 0.5 52.0 ± 1.5 6.0 ± 0.4 1.0 (max)
1.2 (max) 0.8 (max)
2.047 ± 0.059
0.197± 0.020 0.047 (max) 0.236 ± 0.016 0.032(max)
Case Type
DO-35 5,000
BOX
( pcs )
AMMO PACK
CARTON
( pcs )
100,000
1N
52
XXB
Cathode band
Marking Code
Part Number
1N5221-G ~ 1N5267-G
Marking Code
1N50XXB
XX : Product type marking code (see page.2)
