IRFZ46NS/IRFZ46NL
2www.irf.com
Starting TJ = 25°C, L = 389µH
RG = 25Ω, IAS = 28A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
trr Reverse Recovery Time 67 101 ns TJ = 25°C, IF = 28A
Qrr Reverse Recovery Charge 208 312 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient 0.057 V/°C Reference to 25°C, ID =1mA
RDS(on) Static Drain-to-Source On-Resistance .0165 ΩVGS =10V, ID = 28A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 19 S VDS = 25V, ID = 28A
25 µA VDS = 55V, VGS = 0V
250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 VGS = 20V
Gate-to-Source Reverse Leakage -100 nA VGS = -20V
QgTotal Gate Charge 72 ID = 28A
Qgs Gate-to-Source Charge 11 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 26 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 14 VDD = 28V
trRise Time 76 ID = 28A
td(off) Turn-Off Delay Time 52 RG = 12Ω
tfFall Time 57 RD = 0.98Ω, See Fig. 10
Between lead,
and center of die contact
Ciss Input Capacitance 1696 VGS = 0V
Coss Output Capacitance 407 pF VDS = 25V
Crss Reverse Transfer Capacitance 110 = 1.0MHz, See Fig. 5
E AS Single Pulse Avalanche Energy 583152IAS = 28A, L = 389mH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS Drain-to-Source Leakage Current
nH
7.5
LSInternal Source Inductance
53
180