PBSS302NDH - NEXPERIA - Datasheet.Wiki

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1. Product proﬁle

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)

small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS302PD.

1.2 Features

nUltra low collector-emitter saturation voltage VCEsat

n4 A continuous collector current capability IC

nUp to 15 A peak current

nVery low collector-emitter saturation resistance

nHigh efﬁciency due to less heat generation

1.3 Applications

nPower management functions

nCharging circuits

nDC-to-DC conversion

nMOSFET gate driving

nPower switches (e.g. motors, fans)

nThin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.

[2] Pulse test: tp≤300 µs; δ≤0.02.

PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

Rev. 02 — 18 February 2008 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 40 V

ICcollector current [1] --4A

ICM peak collector current single pulse;

tp≤1ms --15A

RCEsat collector-emitter

saturation resistance IC=6A;

IB= 600 mA [2] - 5575mΩ

Product data sheet Rev. 02 — 18 February 2008 2 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simpliﬁed outline Symbol

1 collector

2 collector

3 base

4 emitter

5 collector

6 collector

132

sym014

1, 2, 5, 6

Table 3. Ordering information

Type number Package

Name Description Version

PBSS302ND SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457

Table 4. Marking codes

Type number Marking code

PBSS302ND C7

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 60 V

VCEO collector-emitter voltage open base - 40 V

VEBO emitter-base voltage open collector - 5 V

ICcollector current [1] -4A

ICM peak collector current single pulse;

tp≤1ms -15A

IBbase current - 0.8 A

IBM peak base current single pulse;

tp≤1ms -2A

Ptot total power dissipation Tamb ≤25 °C[2] - 360 mW

[3] - 600 mW

[4] - 750 mW

[1] - 1.1 W

[2][5] - 2.5 W

Product data sheet Rev. 02 — 18 February 2008 3 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[5] Operated under pulsed conditions: Duty cycle δ≤10 % and pulse width tp≤10 ms.

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, mounting pad for collector 1 cm2

(4) FR4 PCB, standard footprint

Fig 1. Power derating curves

Table 5. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

(1)

Tamb (°C)

−75 17512525 75−25

006aaa270

800

400

1200

1600

Ptot

(mW)

(2)

(4)

(3)

Product data sheet Rev. 02 — 18 February 2008 4 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[5] Operated under pulsed conditions: Duty cycle δ≤10 % and pulse width tp≤10 ms.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 350 K/W

[2] - - 208 K/W

[3] - - 167 K/W

[4] - - 113 K/W

[1][5] --50K/W

Rth(j-sp) thermal resistance from

junction to solder point --45K/W

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aaa271

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

duty cycle =

10.75

0.5 0.33

0.2

0.1

0.05

0.02

0.01

Product data sheet Rev. 02 — 18 February 2008 5 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

FR4 PCB, mounting pad for collector 1 cm2

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for collector 6 cm2

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aaa272

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

duty cycle =

10.75

0.5 0.33

0.2

0.1

0.05

0.02

0.01

006aaa273

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

duty cycle =

10.75

0.5 0.33

0.2

0.1

0.05

0.02

0.01

Product data sheet Rev. 02 — 18 February 2008 6 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp≤300 µs; δ≤0.02.

Table 7. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-basecut-off

current VCB =40V; I

E= 0 A - - 0.1 µA

VCB =40V; I

E=0A;

Tj= 150 °C--50µA

ICES collector-emitter

cut-off current VCE =30V; V

BE =0V - - 0.1 µA

IEBO emitter-base cut-off

current VEB =5V; I

C= 0 A - - 0.1 µA

hFE DC current gain VCE =2V; I

C= 0.5 A 300 500 -

VCE =2V; I

C=1A [1] 300 475 -

VCE =2V; I

C=2A [1] 250 385 -

VCE =2V; I

C=4A [1] 100 190 -

VCE =2V; I

C=6A [1] 50 100 -

VCEsat collector-emitter

saturation voltage IC= 0.5 A; IB= 50 mA - 35 60 mV

IC= 1 A; IB= 50 mA - 65 110 mV

IC= 2 A; IB= 200 mA - 115 180 mV

IC= 4 A; IB= 400 mA [1] - 220 300 mV

IC= 6 A; IB= 600 mA [1] - 330 450 mV

RCEsat collector-emitter

saturation resistance IC= 6 A; IB= 600 mA [1] - 5575mΩ

VBEsat base-emitter

saturation voltage IC= 0.5 A; IB= 50 mA - 0.79 0.85 V

IC= 1 A; IB= 50 mA - 0.81 0.9 V

IC= 1 A; IB= 100 mA [1] - 0.83 1 V

IC= 4 A; IB= 400 mA [1] - 1.0 1.1 V

VBEon base-emitter turn-on

voltage VCE =2V; I

C= 2 A - 0.79 1.0 V

tddelay time VCC =10V; I

C=2A;

IBon = 0.1 A;

IBoff =−0.1 A

-12-ns

trrise time - 52 - ns

ton turn-on time - 64 - ns

tsstorage time - 390 - ns

tffall time - 120 - ns

toff turn-off time - 510 - ns

fTtransition frequency VCE =10V; I

C= 0.1 A;

f = 100 MHz - 150 - MHz

Cccollector capacitance VCB =10V;I

E=i

e=0A;

f=1MHz -30-pF

Product data sheet Rev. 02 — 18 February 2008 7 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

VCE =2V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

Fig 5. DC current gain as a function of collector

current; typical values Fig 6. Collector current as a function of

collector-emitter voltage; typical values

VCE =2V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 7. Base-emitter voltage as a function of collector

current; typical values Fig 8. Base-emitter saturation voltage as a function of

collector current; typical values

IC (mA)

10−1105

104

103

110

006aaa274

400

600

200

800

1000

hFE

(1)

(2)

(3)

VCE (V)

0 2.01.60.8 1.20.4

006aaa280

(A)

IB (mA) = 400

360

280

240

200

160

120

320

IC (mA)

10−1105

104

103

110

006aaa275

0.8

0.4

1.2

1.6

VBE

(V)

(1)

(2)

(3)

IC (mA)

10−1105

104

103

110

006aaa344

0.8

0.4

1.2

1.6

VBEsat

(V)

(1)

(2)

(3)

Product data sheet Rev. 02 — 18 February 2008 8 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 9. Collector-emitter saturation voltage as a

function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a

function of collector current; typical values

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 11. Collector-emitter saturation resistance as a

function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

10−1

10−2

VCEsat

(V)

10−3

006aaa276

IC (mA)

10−1105

104

103

110

(1)

(2)

(3) 10−1

10−2

VCEsat

(V)

10−3

006aaa277

IC (mA)

10−1105

104

103

110

(1)

(2)

(3)

10−1

102

103

RCEsat

(Ω)

10−2

006aaa281

IC (mA)

10−1105

104

103

110

(1)

(2)

(3)

10−1

102

103

RCEsat

(Ω)

10−2

006aaa326

IC (A)

10−1105

104

103

110

(2)

(1)

(3)

Product data sheet Rev. 02 — 18 February 2008 9 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

8. Test information

Fig 13. BISS transistor switching time deﬁnition

VCC =10V; I

C= 2 A; IBon = 0.1 A; IBoff =−0.1 A

Fig 14. Test circuit for switching times

006aaa003

IBon (100 %)

input pulse

(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

tdton

90 %

10 %

output pulse

(idealized waveform)

toff

DUT

mlb826

RB(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Product data sheet Rev. 02 — 18 February 2008 10 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

Fig 15. Package outline SOT457 (SC-74)

04-11-08Dimensions in mm

3.0

2.5 1.7

1.3

3.1

2.7

pin 1 index

1.9

0.26

0.10

0.40

0.25

0.95

1.1

0.9

0.6

0.2

132

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

PBSS302ND SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

Product data sheet Rev. 02 — 18 February 2008 11 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

11. Soldering

Dimensions in mm

Fig 16. Reﬂow soldering footprint SOT457 (SC-74)

Dimensions in mm

Fig 17. Wave soldering footprint SOT457 (SC-74)

solder lands

solder resist

occupied area

solder paste

0.95

2.825 0.45 0.55

1.60

1.95

3.45

1.70

3.10

3.20

3.30

msc422

1.40

4.30

5.30

0.45

msc423

1.45 4.45

5.05

solder lands

solder resist

occupied area

Product data sheet Rev. 02 — 18 February 2008 12 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS302ND_2 20080218 Product data sheet - PBSS302ND_1

Modiﬁcations: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Section 1.1 “General description”: amended

•Section 1.4 “Quick reference data”: ICM conditions amended

•Figure 2,3,4, and 6: amended

•Table 5: ICM conditions amended

•Table 5: IBM conditions amended

•Table 6: typing error for maximum value on 6 cm2 footprint amended

•Table 7: typical values for hFE added

•Section 8 “Test information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

PBSS302ND_1 20050419 Product data sheet - -

Product data sheet Rev. 02 — 18 February 2008 13 of 14

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For additional information, please visit: http://www.nxp.com

For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 18 February 2008

Document identifier: PBSS302ND_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information. . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14