1N3671A thru 1N3673AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features * High Surge Capability * Types up to 1000 V VRRM DO-4 Package Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions 1N3671A (R) 1N3673A (R) Unit Repetitive p p peak reverse voltage g VRRM 800 1000 V RMS reverse voltage VRMS 560 700 V DC blocking voltage VDC 800 1000 V Continuous forward current IF TC 150 C 12 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 240 240 A Operating temperature Storage temperature Tj Tstg -65 to 200 -65 to 200 -65 to 200 -65 to 200 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions 1N3671A (R) 1N3673A (R) Unit IF = 12 A, Tj = 25 C VR = 50 V, Tj = 25 C VR = 50 V, Tj = 175 C 1.1 10 15 1.1 10 15 A mA 2.00 2.00 C/W V Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 1N3671A thru 1N3673AR www.genesicsemi.com 2