BC546 / 547 / 548 Vishay Semiconductors Small Signal Transistors (NPN) Features C 1 * NPN Silicon Epitaxial Planar Transistors * These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. As complementary types the PNP transistors BC556...BC558 are recommended. * On special request, these transistors are also manufactured in the pin configuration TO-18. 2 B 1 2 3 E 3 18855_1 Mechanical Data Case: TO-92 Plastic case Weight: approx. 177 mg Packaging Codes/Options: BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box Parts Table Part Ordering code Remarks BC546A BC546A-BULK or BC546A-TAP Bulk / Ammopack BC546B BC546B-BULK or BC546B-TAP Bulk / Ammopack BC547A BC547A-BULK or BC547A-TAP Bulk / Ammopack BC547B BC547B-BULK or BC547B-TAP Bulk / Ammopack BC547C BC547C-BULK or BC547C-TAP Bulk / Ammopack BC548A BC548A-BULK or BC548A-TAP Bulk / Ammopack BC548B BC548B-BULK or BC548B-TAP Bulk / Ammopack BC548C BC548C-BULK or BC548C-TAP Bulk / Ammopack Document Number 85113 Rev. 1.2, 02-Nov-04 www.vishay.com 1 BC546 / 547 / 548 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Collector - base voltage Collector - emitter voltage Emitter - base voltage Part Symbol Value Unit BC546 VCBO 80 V BC547 VCBO 50 V BC548 VCBO 30 V BC546 VCES 80 V BC547 VCES 50 V BC548 VCES 30 V BC546 VCEO 65 V BC547 VCEO 45 V BC548 VCEO 30 V BC546 VEBO 6 V BC547 VEBO 6 V BC548 VEBO 5 V IC 100 mA ICM 200 mA IBM 200 mA - IEM 200 Collector current Collector peak current Peak base current Peak emitter current Power dissipation 1) Tamb = 25 C Ptot 500 mA mW 1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case. Maximum Thermal Resistance Parameter Test condition Symbol Value Unit RJA 2501) C/W Thermal resistance junction to ambient air Junction temperature Tj 150 C Storage temperature range TS - 65 to + 150 C 1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case. Electrical DC Characteristics Parameter Test condition Part Symbol Min Typ Max Unit 2.7 4.5 k 3.2 4.5 8.5 k 6 8.7 15 k hoe 18 30 S VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 30 60 S VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 60 110 S Small signal current gain (current gain group A) VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 220 Small signal current gain (current gain group B) VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 330 Small signal current gain (current gain group C) VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 600 Input impedance (current gain group A) VCE = 5 V, IC = 2 mA, f = 1 kHz hie 1.6 Input impedance (current gain group B) VCE = 5 V, IC = 2 mA, f = 1 kHz hie Input impedance (current gain group C) VCE = 5 V, IC = 2 mA, f = 1 kHz hie Output admittance (current gain group A) VCE = 5 V, IC = 2 mA, f = 1 kHz Output admittance (current gain group B) Output admittance (current gain group C) www.vishay.com 2 Document Number 85113 Rev. 1.2, 02-Nov-04 BC546 / 547 / 548 VISHAY Vishay Semiconductors Parameter Test condition Part Symbol Min Typ Max Reverse voltage transfer ratio (current gain group A) VCE = 5 V, IC = 2 mA, f = 1 kHz hre 1.5 x 10-4 Reverse voltage transfer ratio (current gain group B) VCE = 5 V, IC = 2 mA, f = 1 kHz hre 2 x 10-4 Reverse voltage transfer ratio (current gain group C) VCE = 5 V, IC = 2 mA, f = 1 kHz hre 3 x 10-4 DC current gain (current gain group A) VCE = 5 V, IC = 10 A hFE 90 DC current gain (current gain group B) VCE = 5 V, IC = 10 A hFE 150 DC current gain (current gain group C) VCE = 5 V, IC = 10 A hFE 270 DC current gain (current gain group A) VCE = 5 V, IC = 2 mA hFE 110 180 220 DC current gain (current gain group B) VCE = 5 V, IC = 2 mA hFE 200 290 450 DC current gain (current gain group C) VCE = 5 V, IC = 2 mA hFE 420 500 800 DC current gain (current gain group A) VCE = 5 V, IC = 100 mA hFE 120 DC current gain (current gain group B) VCE = 5 V, IC = 100 mA hFE 200 DC current gain (current gain group C) VCE = 5 V, IC = 100 mA hFE 400 IC = 10 mA, IB = 0.5 mA VCEsat 80 200 IC = 100 mA, IB = 5 mA VCEsat 200 600 Base saturation voltage IC = 10 mA, IB = 0.5 mA VBEsat 700 IC = 100 mA, IB = 5 mA VBEsat Base - emitter voltage VCE = 5 V, IC = 2 mA VBE VCE = 5 V, IC = 10 mA VBE Collector saturation voltage Collector-emitter cut-off current 660 mV mV mV 900 580 Unit mV 700 mV 720 mV VCE = 80 V BC546 ICES 0.2 15 nA VCE = 50 V BC547 ICES 0.2 15 nA VCE = 30 V BC548 ICES 0.2 15 nA VCE = 80 V, Tj = 125 C BC546 ICES 4 A VCE = 50 V, Tj = 125 C BC547 ICES 4 A VCE = 30 V, Tj = 125 C BC548 ICES 4 A Part Symbol Electrical AC Characteristics Parameter Test condition Min Typ Gain - bandwidth product VCE = 5 V, IC = 10 mA, f = 100 MHz fT 300 Collector - base capacitance VCB = 10 V, f = 1 MHz CCBO 3.5 Emitter - base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 5 V, IC = 200 A, RG = 2 k, f = 1 kHz, f = 200 Hz Document Number 85113 Rev. 1.2, 02-Nov-04 Max Unit MHz 6 pF CEBO 9 BC546 F 2 10 dB pF BC547 F 2 10 dB BC548 F 1.2 4 dB www.vishay.com 3 BC546 / 547 / 548 VISHAY Vishay Semiconductors 500 400 300 200 100 0 20 40 60 80 100 120 140 160 180 200 0 I CBO - Collector-Base Cutoff Current ( nA ) Ptot - Admissible Power Dissipation ( mW ) Typical Characteristics (Tamb = 25 C unless otherwise specified) Tamb - Ambient Temperature ( C ) 18865 10000 maximum 1000 100 typical 10 0.1 0 Figure 4. Collector-Base Cutoff Curent vs. Ambient Temperature 100 1000 VCE = 5 V I C - Collector Current ( mA ) 25 C - 50 C VCE = 5 V 10 1 0.01 0.1 1 10 I C - Collector Current ( mA ) 18824 0 0.2 0.4 0.6 0.8 1 VBE - Base-Emitter Voltage ( V ) Figure 5. Collector Current vs. Base-Emitter Voltage C CBO / C EBO - Collector / Emitter r thA - Pulse Thermal Resistance ( C / W) 25 C 10 0.2 0.1 0.05 0.02 0.01 0.005 1 = 0 10 -1 10 -6 18866 tp = tp /T PI T 10 -4 10 -2 1 t p - Pulse Length ( s ) www.vishay.com 8 6 4 2 0 0.1 10 2 Figure 3. Pulse Thermal Resistance vs. Pulse Duration 4 - 50 C 18827 10 3 10 Tamb = 100 C 1 100 Figure 2. DC Current Gain vs. Collector Current 10 2 10 0.1 Base Capacitance ( pF ) h FE - DC Current Gain Tamb = 100 C 100 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature ( C ) 18826 Figure 1. Admissible Power Dissipation vs. Ambient Temperature Test voltage VCBO : equal to the given maximum value VCES 1 18828 C EBO C CBO Tamb = 25 C 1 10 VCBO , V EBO - Reverse Bias Voltage ( V ) Figure 6. Collector Base Capacitance, Emitter base Capacitance vs. Bias Voltage Document Number 85113 Rev. 1.2, 02-Nov-04 BC546 / 547 / 548 VISHAY VCEsat - Collector Saturation Voltage ( V ) Vishay Semiconductors 0.5 I C / I B = 20 0.4 0.3 0.2 Tamb = 100 C 0.1 25 C - 50 C 0 0.1 1 10 I C - Collector Current ( mA ) 18829 100 Figure 7. Collector Saturation Voltage vs. Collector Current h e ( I C ) / h e ( IC = 2 mA ) 100 VCE = 5 V Tamb = 25 C h ie 10 h re 1 h fe h oe 0.1 0.1 18830 1 I C - Collector Current ( mA ) 10 Figure 8. Relative h-Parameters vs. Collector Current f T - Gain-Bandwidth Product ( MHz ) 1000 Tamb = 25 C VCE = 10 V 5V 2V 100 10 0.1 18831 10 1 I C - Collector Current ( mA ) 100 Figure 9. Gain-Bandwidth Product vs. Collector Current Document Number 85113 Rev. 1.2, 02-Nov-04 www.vishay.com 5 BC546 / 547 / 548 VISHAY Vishay Semiconductors Packaging for Radial Taping Dimensions in mm 2 12.7 1 "H" 0.5 9 12 0.3 18 1 -0.5 0.3 0.2 1 Vers. Dim. "H" FSZ 5.08 0.7 4 0.2 2.54 27 0.5 0.9 max + 0.6 - 0.1 6.3 0.7 12.7 0.2 Measure limit over 20 index - holes: 1 18787 www.vishay.com 6 Document Number 85113 Rev. 1.2, 02-Nov-04 BC546 / 547 / 548 VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 3.6 (0.142) min. 12.5 (0.492) 4.6 (0.181) 4.6 (0.181) max. 0.55 (0.022) 2.5 (0.098) Bottom View Document Number 85113 Rev. 1.2, 02-Nov-04 18776 www.vishay.com 7 BC546 / 547 / 548 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 85113 Rev. 1.2, 02-Nov-04