BC546 / 547 / 548
Document Number 85113
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
1
18855_1
123
2
1
3E
B
C
Small Signal Transistors (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors
• These transistors are subdivided into three groups
A, B, and C according to their current gain. The
type BC546 is available in groups A and B, how-
ever, the types BC547 and BC548 can be supplied
in all three groups. As complementary types the
PNP transistors BC556...BC558 are recom-
mended.
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic case
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Part Ordering code Remarks
BC546A BC546A-BULK or BC546A-TAP Bulk / Ammopack
BC546B BC546B-BULK or BC546B-TAP Bulk / Ammopack
BC547A BC547A-BULK or BC547A-TAP Bulk / Ammopack
BC547B BC547B-BULK or BC547B-TAP Bulk / Ammopack
BC547C BC547C-BULK or BC547C-TAP Bulk / Ammopack
BC548A BC548A-BULK or BC548A-TAP Bulk / Ammopack
BC548B BC548B-BULK or BC548B-TAP Bulk / Ammopack
BC548C BC548C-BULK or BC548C-TAP Bulk / Ammopack
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Document Number 85113
Rev. 1.2, 02-Nov-04
VISHAY
BC546 / 547 / 548
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Maximum Thermal Resistance
1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Electrical DC Characteristics
Parameter Test condition Part Symbol Value Unit
Collector - base voltage BC546 VCBO 80 V
BC547 VCBO 50 V
BC548 VCBO 30 V
Collector - emitter voltage BC546 VCES 80 V
BC547 VCES 50 V
BC548 VCES 30 V
BC546 VCEO 65 V
BC547 VCEO 45 V
BC548 VCEO 30 V
Emitter - base voltage BC546 VEBO 6V
BC547 VEBO 6V
BC548 VEBO 5V
Collector current IC100 mA
Collector peak current ICM 200 mA
Peak base current IBM 200 mA
Peak emitter current - IEM 200 mA
Power dissipation Tamb = 25 °C Ptot 5001) mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RθJA 2501) °C/W
Junction temperature Tj150 °C
Storage temperature range TS- 65 to + 150 °C
Parameter Test condition Part Symbol Min Ty p Max Unit
Small signal current gain
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 220
Small signal current gain
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 330
Small signal current gain
(current gain group C)
VCE = 5 V, IC = 2 mA, f = 1 kHz hfe 600
Input impedance
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz hie 1.6 2.7 4.5 kΩ
Input impedance
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz hie 3.2 4.5 8.5 kΩ
Input impedance
(current gain group C)
VCE = 5 V, IC = 2 mA, f = 1 kHz hie 68.715kΩ
Output admittance
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 18 30 µS
Output admittance
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 30 60 µS
Output admittance
(current gain group C)
VCE = 5 V, IC = 2 mA, f = 1 kHz hoe 60 110 µS
VISHAY
BC546 / 547 / 548
Document Number 85113
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
3
Electrical AC Characteristics
Reverse voltage transfer ratio
(current gain group A)
VCE = 5 V, IC = 2 mA, f = 1 kHz hre 1.5 x 10-4
Reverse voltage transfer ratio
(current gain group B)
VCE = 5 V, IC = 2 mA, f = 1 kHz hre 2 x 10-4
Reverse voltage transfer ratio
(current gain group C)
VCE = 5 V, IC = 2 mA, f = 1 kHz hre 3 x 10-4
DC current gain
(current gain group A)
VCE = 5 V, IC = 10 µAh
FE 90
DC current gain
(current gain group B)
VCE = 5 V, IC = 10 µAh
FE 150
DC current gain
(current gain group C)
VCE = 5 V, IC = 10 µAh
FE 270
DC current gain
(current gain group A)
VCE = 5 V, IC = 2 mA hFE 110 180 220
DC current gain
(current gain group B)
VCE = 5 V, IC = 2 mA hFE 200 290 450
DC current gain
(current gain group C)
VCE = 5 V, IC = 2 mA hFE 420 500 800
DC current gain
(current gain group A)
VCE = 5 V, IC = 100 mA hFE 120
DC current gain
(current gain group B)
VCE = 5 V, IC = 100 mA hFE 200
DC current gain
(current gain group C)
VCE = 5 V, IC = 100 mA hFE 400
Collector saturation voltage IC = 10 mA, IB = 0.5 mA VCEsat 80 200 mV
IC = 100 mA, IB = 5 mA VCEsat 200 600 mV
Base saturation voltage IC = 10 mA, IB = 0.5 mA VBEsat 700 mV
IC = 100 mA, IB = 5 mA VBEsat 900 mV
Base - emitter voltage VCE = 5 V, IC = 2 mA VBE 580 660 700 mV
VCE = 5 V, IC = 10 mA VBE 720 mV
Collector-emitter cut-off current VCE = 80 V BC546 ICES 0.2 15 nA
VCE = 50 V BC547 ICES 0.2 15 nA
VCE = 30 V BC548 ICES 0.2 15 nA
VCE = 80 V, Tj = 125 °C BC546 ICES 4µA
VCE = 50 V, Tj = 125 °C BC547 ICES 4µA
VCE = 30 V, Tj = 125 °C BC548 ICES 4µA
Parameter Test condition Part Symbol Min Typ Max Unit
Gain - bandwidth product VCE = 5 V, IC = 10 mA,
f = 100 MHz
fT300 MHz
Collector - base capacitance VCB = 10 V, f = 1 MHz CCBO 3.5 6 pF
Emitter - base capacitance VEB = 0.5 V, f = 1 MHz CEBO 9pF
Noise figure VCE = 5 V, IC = 200 µA,
RG = 2 kΩ, f = 1 kHz,
∆f = 200 Hz
BC546 F 2 10 dB
BC547 F 2 10 dB
BC548 F 1.2 4 dB
Parameter Test condition Part Symbol Min Typ Max Unit
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4
Document Number 85113
Rev. 1.2, 02-Nov-04
VISHAY
BC546 / 547 / 548
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 2. DC Current Gain vs. Collector Current
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
200
18865
T
amb
- Ambient Temperature ( °C)
500
400
300
200
100
20 40 60 80 100 120 140 160 1800
0
P - Admissible Power Dissipation ( mW )
tot
-50°C
18824
1
10
100
1000
10.1 10 1000.01
h - DC Current Gain
FE
I - Collector Current ( mA )
C
VCE =5V
25 °C
Tamb =100°C
t
p
- Pulse Length ( s )
10
-6
10
-4
10
-2
10
2
1
ν/T=t
p
P
I
T
t
p
0.01
18866
r - Pulse Thermal Resistance (
thA
10
3
10
1
10
-1
10
2
°C/W)
0.2
0.1
0.05
0.02
0.05
0.005
ν=0
Figure 4. Collector-Base Cutoff Curent vs. Ambient Temperature
Figure 5. Collector Current vs. Base-Emitter Voltage
Figure 6. Collector Base Capacitance, Emitter base Capacitance
vs. Bias Voltage
10
100
1000
10000
1
0.1
200
18826
T
amb
- Ambient Temperature (°C)
20 40 60 80 100 120 140 160 1800
I - Collector-Base Cutoff Current ( nA )
CBO
V:
CBO
VCES
Test voltage
equal to the given
maximum value
maximum
typical
I - Collector Current ( mA )
C
18827
V
BE
- Base-Emitter Voltage(V)
amb =100°CT
-50°C
VCE =5V
25°C
1
10
0.1
100
0.2010.4 0.6 0.8
C / C - Collector / Emitter
Base Capacitance ( pF )
CBO EBO
18828
V
CBO
,V
EBO
- Reverse Bias Voltage(V)
0
2
4
6
8
10
0.1 101
amb =25°CT
EBO
C
CBO
C
VISHAY
BC546 / 547 / 548
Document Number 85113
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
5
Figure 7. Collector Saturation Voltage vs. Collector Current
Figure 8. Relative h-Parameters vs. Collector Current
Figure 9. Gain-Bandwidth Product vs. Collector Current
V - Collector Saturation Voltage(V)
CEsat
0
0.1
0.2
0.3
0.4
0.5
18829
I
C
- Collector Current ( mA )
0.1 1 10 100
amb =100°CT
-50°C
25°C
I/I=20
CB
18830
1
10
0.1
100
0.1 110
h (I )/h (I =2mA)
eeCC
IC- Collector Current ( mA )
amb =25°CT
VCE =5V
hie
hre
hfe
hoe
amb =25°CT
10
100
1000
0.1 110 100
VCE =10V
5V 2V
f - Gain-Bandwidth Product ( MHz )
T
I - Collector Current ( mA )
C
18831
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Document Number 85113
Rev. 1.2, 02-Nov-04
VISHAY
BC546 / 547 / 548
Vishay Semiconductors
Packaging for Radial Taping
Dimensions in mm
±1 12.7
±1
0.3
± 0.2
±1
-0.5
18
12 ±
0.3
9
± 0.5
4
± 0.2
12.7
± 0.2
6.3
± 0.7
5.08
± 0.7
2.54
+ 0.6
- 0.1
Measure limit over 20 index - holes: ± 1
"H"
Vers. Dim. "H"
FSZ 27 ± 0.5
0.9 max
±2
18787
VISHAY
BC546 / 547 / 548
Document Number 85113
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in mm (Inches)
Bottom
View
4.6 (0.181) 3.6 (0.142)
min. 12.5 (0.492) 4.6 (0.181)
max. 0.55 (0.022)
2.5 (0.098)
18776
www.vishay.com
8
Document Number 85113
Rev. 1.2, 02-Nov-04
VISHAY
BC546 / 547 / 548
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
