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LM321
SNOS935C –FEBRUARY 2001–REVISED DECEMBER 2014
LM321 Low Power Single Operational Amplifier
1 Features 3 Description
The LM321 brings performance and economy to low
1• (VCC =5V,TA= 25°C. Typical values unless power systems. With a high unity gain frequency and
specified.) a specified 0.4-V/µs slew rate, the quiescent current
• Gain-Bandwidth Product 1 MHz is only 430-µA/amplifier (5 V). The input common
• Low Supply Current 430 µA mode range includes ground and therefore the device
is able to operate in single supply applications as well
• Low Input Bias Current 45 nA as in dual supply applications. It is also capable of
• Wide Supply Voltage Range 3 V to 32 V comfortably driving large capacitive loads.
• Stable With High Capacitive Loads The LM321 is available in the SOT-23 package.
• Single Version of LM324 Overall the LM321 is a low power, wide supply range
performance operational amplifier that can be
2 Applications designed into a wide range of applications at an
economical price without sacrificing valuable board
• Chargers space.
• Power Supplies
• Industrial: Controls, Instruments Device Information(1)
• Desktops PART NUMBER PACKAGE BODY SIZE (NOM)
• Communications Infrastructure LM321 SOT (5) 2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Schematic
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM321
SNOS935C –FEBRUARY 2001–REVISED DECEMBER 2014
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Table of Contents
7.3 Feature Description................................................... 7
1 Features.................................................................. 17.4 Device Functional Modes.......................................... 8
2 Applications ........................................................... 18 Application and Implementation .......................... 9
3 Description............................................................. 18.1 Application Information.............................................. 9
4 Revision History..................................................... 28.2 Typical Applications ................................................ 10
5 Pin Configuration and Functions......................... 39 Power Supply Recommendations...................... 13
6 Specifications......................................................... 310 Layout................................................................... 13
6.1 Absolute Maximum Ratings ..................................... 310.1 Layout Guidelines ................................................. 13
6.2 ESD Ratings.............................................................. 310.2 Layout Example .................................................... 14
6.3 Recommended Operating Conditions....................... 411 Device and Documentation Support................. 15
6.4 Thermal Information.................................................. 411.1 Trademarks........................................................... 15
6.5 Electrical Characteristics........................................... 411.2 Electrostatic Discharge Caution............................ 15
6.6 Typical Characteristics.............................................. 611.3 Glossary................................................................ 15
7 Detailed Description.............................................. 712 Mechanical, Packaging, and Orderable
7.1 Overview................................................................... 7Information........................................................... 15
7.2 Functional Block Diagram......................................... 7
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (March 2013) to Revision C Page
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes,Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
Changes from Revision A (March 2013) to Revision B Page
• Changed layout of National Data Sheet to TI format ........................................................................................................... 13
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5 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
Top View
Pin Functions
PIN I/O DESCRIPTION
NAME NO.
+IN 1 I Noninverting input
V– 2 — Negative (lowest) power supply
–IN 3 I Inverting input
OUTPUT 4 O Output
V+ 5 — Positive (highest) power supply
6 Specifications
6.1 Absolute Maximum Ratings (1)
MIN MAX UNIT
Differential Input Voltage ±Supply Voltage
Input Current (VIN <−0.3 V) (2) 50 mA
Supply Voltage (V+- V−) 32 V
Input Voltage −0.3 32 V
Output Short Circuit to GND, V+≤15 V and TA= 25°C (3) Continuous
Junction Temperature (4) 150 °C
Mounting Temperature: Lead temperature (Soldering, 10 sec) 260 °C
Mounting Temperature: Infrared (10 sec) 215 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector base junction of
the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is
also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the operational amplifer
to go to the V+ voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not
destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than
−0.36V (at 25°C).
(3) Short circuits from the output V+ can cause excessive heating and eventual destruction. When considering short circuits to ground the
maximum output current is approximately 40mA independent of the magnitude of V+. At values of supply voltage in excess of +15V,
continuous short circuits can exceed the power dissipation ratings and cause eventual destruction.
(4) The maximum power dissipation is a function of TJ(MAX), θJA , and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA. All numbers apply for packages soldered directly onto a PC board.
6.2 ESD Ratings VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±300 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions MIN MAX UNIT
Temperature Range −40 85 °C
Supply Voltage 3 30 V
6.4 Thermal Information LM321
THERMAL METRIC(1) DBV UNIT
5 PINS
RθJA Junction-to-ambient thermal resistance 265 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
6.5 Electrical Characteristics
Unless otherwise specified, all limits specified for at TA= 25°C; V+= 5 V, V−= 0 V, VO= 1.4 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOS Input Offset Voltage (1)2 7 mV
(1), –40°C ≤TJ≤85°C 9
IOS Input Offset Current 5 50 nA
–40°C ≤TJ≤85°C 150
IBInput Bias Current (2) 45 250 nA
–40°C ≤TJ≤85°C 500
VCM Input Common-Mode Voltage V+= 30 V (3), for CMRR > = 50dB 0 V+- 1.5
Range V
V+= 30 V (3), for CMRR > = 50dB, –40°C ≤V+- 2
TJ≤85°C
AVLarge Signal Voltage Gain (V+= 15 V, RL= 2kΩ, VO= 1.4 V to 11.4 25 100
V) V/mV
(V+= 15 V, RL= 2kΩ, VO= 1.4 V to 11.4 15
V), –40°C ≤TJ≤85°C
PSRR Power Supply Rejection Ratio RS≤10kΩ, 65 100 dB
V+≤5 V to 30 V
CMRR Common Mode Rejection RS≤10kΩ65 85 dB
Ratio
VOOutput Swing VOH V+= 30 V, RL= 2kΩ, –40°C ≤TJ≤85°C 26 V
V+= 30 V, RL= 10kΩ, –40°C ≤TJ≤85°C 27 28
VOL V+= 5 V, RL= 10kΩ, –40°C ≤TJ≤85°C 5 20 mV
ISSupply Current, No Load V+= 5 V 0.430 1.15
V+= 5 V, –40°C ≤TJ≤85°C 0.7 1.2 mA
V+= 30 V 0.660 2.85
V+= 30 V, –40°C ≤TJ≤85°C 1.5 3
ISOURCE Output Current Sourcing VID = +1 V, V+= 15 V, VO= 2 V 20 40 mA
VID = +1 V, V+= 15 V, VO= 2 V, –40°C ≤10 20
TJ≤85°C
ISINK Output Current Sinking VID =−1 V, V+= 15 V, VO= 2 V 10 20 mA
VID =−1 V, V+= 15 V, VO= 2 V, –40°C ≤
TJ≤85°C 5 8
VID =−1 V, V+= 15 V, VO= 0.2 V 12 100 µA
(1) VO ≅1.4 V, RS = 0Ωwith V+ from 5 V to 30 V; and over the full input common-mode range (0 V to V+ - 1.5 V) at 25°C.
(2) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the
state of the output so no loading change exists on the input lines.
(3) The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V (at 25°C). The
upper end of the common-mode voltage range is V+ - 1.5 V at 25°C, but either or both inputs can go to +32 V without damage,
independent of the magnitude of V+.
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Electrical Characteristics (continued)
Unless otherwise specified, all limits specified for at TA= 25°C; V+= 5 V, V−= 0 V, VO= 1.4 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IOOutput Short Circuit to Ground V+= 15 V 40 85 mA
(4)
SR Slew Rate V+= 15 V, RL= 2kΩ, VIN = 0.5 to 3 V, CL=0.4 V/µs
100pF, Unity Gain
GBW Gain Bandwidth Product V+= 30 V, f = 100kHz, VIN = 10 mV, RL1 MHz
=2kΩ, CL= 100 pF
φm Phase Margin 60 degrees
THD Total Harmonic Distortion f = 1kHz, AV= 20dB, RL= 2kΩ, VO= 2VPP,0.015%
CL= 100 pF, V+= 30 V
enEquivalent Input Noise Voltage f = 1kHz, RS= 100Ω, V+= 30 V 40 nV/√Hz
(4) Short circuits from the output V+ can cause excessive heating and eventual destruction. When considering short circuits to ground the
maximum output current is approximately 40mA independent of the magnitude of V+. At values of supply voltage in excess of +15V,
continuous short circuits can exceed the power dissipation ratings and cause eventual destruction.
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6.6 Typical Characteristics
Unless otherwise specified, VS= 5 V, single supply, TA= 25°C.
Figure 2. Large Signal Pulse Response
Figure 1. Small Signal Pulse Response
Figure 3. Supply Current vs. Supply Voltage Figure 4. Sinking Current vs Output Voltage
Figure 5. Source Current vs. Output Voltage Figure 6. Open Loop Frequency Response
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7 Detailed Description
7.1 Overview
The LM321 operational amplifer can operate with a single or dual power supply voltage, has true-differential
inputs, and remains in the linear mode with an input common-mode voltage of 0 VDC. This amplifier operates
over a wide range of power supply voltages, with little change in performance characteristics. At 25°C amplifier
operation is possible down to a minimum supply voltage of 3 V. Large differential input voltages can be easily
accommodated and, as input differential voltage protection diodes are not needed, no large input currents result
from large differential input voltages. The differential input voltage may be larger than V+ without damaging the
device. Protection should be provided to prevent the input voltages from going negative more than −0.3 VDC (at
25°C). An input clamp diode with a resistor to the IC input terminal can be used.
7.2 Functional Block Diagram
7.3 Feature Description
To reduce the power supply drain, the amplifier has a class A output stage for small signal levels which converts
to class B in a large signal mode. This allows the amplifiers to both source and sinks large output currents.
Therefore both NPN and PNP external current boost transistors can be used to extend the power capability of
the basic amplifiers. The output voltage needs to raise approximately 1 diode drop above ground to bias the on
chip vertical PNP transistor for output current sinking applications.
For AC applications, where the load is capacitively coupled to the output of the amplifier, a resistor should be
used, from the output of the amplifier to ground to increase the class A bias current and to reduce distortion.
Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin. Values
of 50 pF can be accommodated using the worst-case non-inverting unity gain connection. Large closed loop
gains or resistive isolation should be used if large load capacitance must be driven by the amplifier.
The bias network of the LM321 establishes a supply current which is independent of the magnitude of the power
supply voltage over the range of from 3 VDC to 30 VDC.
Output short circuits either to ground or to the positive power supply should be of short time duration. Units can
be destroyed, not as a result of the short circuit current causing metal fusing, but rather due to the large increase
in IC chip dissipation which will cause eventual failure due to excessive junction temperatures. The larger value
of output source current which is available at 25°C provides a larger output current capability at elevated
temperatures than a standard IC operational amplifer.
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7.4 Device Functional Modes
7.4.1 Common-Mode Voltage Range
The input common-mode voltage range of the LM321 series extends from 300 mV below ground to 32 V for
normal operation. The typical performance in this range is summarized in Table 1:
Table 1. Typical Performance Range (Vs = 5 V)
PARAMETER MIN TYP MAX UNIT
Input voltage range –0.3 32 V
Offset voltage 2 7 mV
Offset voltage drift (TA= –40°C to 85°C) 9 µV/°C
CMRR 65 85 dB
PSRR 65 100 dB
Gain bandwidth product (GBP) 1 MHz
Slew rate 0.4 V/µs
Phase margin 60 °
Equivalent input noise voltage 40 nV/√Hz
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The LM321 operational amplifer can operate with a single or dual power supply voltage, has true-differential
inputs, and remain in the linear mode with an input common-mode voltage of 0 VDC. This amplifier operates over
a wide range of power supply voltages, with little change in performance characteristics. At 25°C amplifier
operation is possible down to a minimum supply voltage of 3 V.
Large differential input voltages can be easily accommodated and, as input differential voltage protection diodes
are not needed, no large input currents result from large differential input voltages. The differential input voltage
may be larger than V+without damaging the device. Protection should be provided to prevent the input voltages
from going negative more than −0.3 VDC (at 25°C).An input clamp diode with a resistor to the IC input terminal
can be used.
To reduce the power supply drain, the amplifier has a class A output stage for small signal levels which converts
to class B in a large signal mode. This allows the amplifiers to both source and sink large output currents.
Therefore both NPN and PNP external current boost transistors can be used to extend the power capability of
the basic amplifiers. The output voltage needs to raise approximately 1 diode drop above ground to bias the on-
chip vertical PNP transistor for output current sinking applications.
For AC applications, where the load is capacitively coupled to the output of the amplifier, a resistor should be
used, from the output of the amplifier to ground to increase the class A bias current and to reduce distortion.
Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin. Values
of 50pF can be accommodated using the worst-case non-inverting unity gain connection. Large closed loop
gains or resistive isolation should be used if large load capacitance must be driven by the amplifier.
The bias network of the LM321 establishes a supply current which is independent of the magnitude of the power
supply voltage over the range of from 3 VDC to 30 VDC.
Output short circuits either to ground or to the positive power supply should be of short time duration. Units can
be destroyed, not as a result of the short circuit current causing metal fusing, but rather due to the large increase
in IC chip dissipation which will cause eventual failure due to excessive junction temperatures. The larger value
of output source current which is available at 25°C provides a larger output current capability at elevated
temperatures than a standard IC operational amplifer.
The circuits presented in the section on typical applications emphasize operation on only a single power supply
voltage. If complementary power supplies are available, all of the standard operational amplifer circuits can be
used. In general, introducing a pseudo-ground (a bias voltage reference of V+/2) will allow operation above and
below this value in single power supply systems. Many application circuits are shown which take advantage of
the wide input common-mode voltage range which includes ground. In most cases, input biasing is not required
and input voltages which range to ground can easily be accommodated.
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8.2 Typical Applications
8.2.1 Noninverting DC Gain (0-V Input = 0-V Output)
Figure 7. Non-Inverting DC Gain Schematic (0-V Input = 0-V Output)
8.2.1.1 Design Requirements
• Supply voltage (up to 32 V)
• Phase margin: 60°
8.2.1.2 Detailed Design Procedure
• Connect 1-MΩfeedback resistor between the output and the inverting terminal of the amplifier.
• Connect 10-kΩresistor between the inverting terminal and ground. Place the resistor as close to the inverting
pin as possible.
• Connect power supply and input voltages.
8.2.1.3 Application Curve
* R not needed due to temperature independent
Figure 8. Gain of the Noninverting Amplifier
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Typical Applications (continued)
8.2.2 DC Summing Amplifier (VIN's ≥0 VDC and VO≥VDC)
The summing amplifier, a special case of the inverting amplifier, is shown in Figure 7. The circuit gives an
inverted output which is equal to the weighted algebraic sum of all four inputs. The gain of any input of this circuit
is equal to the ratio of the appropriate input resistor to the feedback resistor. The advantage of this circuit is that
there is no interaction between inputs and operations such as summing and weighted averaging are
implemented very easily.
Where: V0= V1+ V2- V3- V4, (V1+ V2)≥(V3+ V4) to keep VO> 0 VDC
Figure 9. DC Summing Amplifier Schematic
(VIN's ≥0 VDC and VO≥VDC)
8.2.3 Amplitude Modulator Circuit
The modulator circuit is shown in Figure 10. PWM signal is used to switch the MOSFET. When the MOSFET is
on, the circuit acts as an inverting amplifier with gain 1. When The MOSFET is off, the inverting and non-inverting
signals cancel each other out. Therefore, the output switches from –VIN to GND at the carrier frequency.
Figure 10. Amplitude Modulator Circuit Schematic
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Typical Applications (continued)
8.2.4 Power Amplifier
Power amplifier application circuit is shown in Figure 11. Voltage gain is set by R1 and R2. The output of the
amplifier is connected to the base of BJT which amplifies the current. Current gain is set by β, current gain of a
BJT. The resulting output provides high power to the load. Differential voltage supplies are necessary.
V0= 0 VDC for VIN = 0 VDC, AV= 10
Figure 11. Power Amplifier Schematic
8.2.5 LED Driver
LM321 operating as an LED driver is shown in Figure 12. The output of the amplifier sets the current through the
diode. The voltage across the LED is assumed constant.
Figure 12. LED Driver Schematic
8.2.6 Fixed Current Sources
Operational amplifier can be used to provide fixed current source to multiple loads. The output voltage of the
amplifier is connected to bases of bipolar transistors. The feedback is provided from the drain of a BJT to the
inverting terminal of the amplifier. Currents in the second and later BJTs are set by the ratio of R1 and R2.
Figure 13. Fixed Current Sources Schematic
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Typical Applications (continued)
8.2.7 Lamp Driver
Similar to the LED driver, LM321 can be used as a lamp driver. The output of the amplifier is to be connected to
the base of a bipolar transistor which will drive β*output current of the amplifier through the lamp.
Figure 14. Lamp Driver Schematic
9 Power Supply Recommendations
The LM321 is specified for operation up to 32 V; many specifications apply from –40°C to 85°C. Parameters that
can exhibit significant variance with regard to operating voltage or temperature are presented in Typical
Characteristics. Place 0.1-μF bypass capacitors close to the power-supply terminals to reduce errors coupling in
from noisy or high-impedance power supplies. For more detailed information on bypass capacitor placement, see
Layout.
10 Layout
10.1 Layout Guidelines
For best operational performance of the device, use good printed circuit board (PCB) layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole and operational
amplifer itself. Bypass capacitors are used to reduce the coupled noise by providing low-impedance power
sources local to the analog circuitry.
– Connect low-ESR, 0.1-μF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single
supply applications.
• Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds paying attention to the flow of the ground current. For more detailed information refer to
Circuit Board Layout Techniques,SLOA089.
• In order to reduce parasitic coupling, run the input traces as far away from the supply or output traces as
possible. If it is not possible to keep them separate, it is much better to cross the sensitive trace perpendicular
as opposed to in parallel with the noisy trace.
• Place the external components as close to the device as possible. As shown in Figure 15, keeping RF and
RG close to the inverting input minimizes parasitic capacitance.
• Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
• Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
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11 Device and Documentation Support
11.1 Trademarks
All trademarks are the property of their respective owners.
11.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.3 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM321MF NRND SOT-23 DBV 5 1000 Non-RoHS
& Green Call TI Call TI -40 to 85 A63A
LM321MF/NOPB ACTIVE SOT-23 DBV 5 1000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 A63A
LM321MFX NRND SOT-23 DBV 5 3000 Non-RoHS
& Green Call TI Call TI -40 to 85 A63A
LM321MFX/NOPB ACTIVE SOT-23 DBV 5 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 A63A
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM321MF SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM321MF/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM321MFX SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
LM321MFX/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
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Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM321MF SOT-23 DBV 5 1000 210.0 185.0 35.0
LM321MF/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0
LM321MFX SOT-23 DBV 5 3000 210.0 185.0 35.0
LM321MFX/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Sep-2019
Pack Materials-Page 2
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PACKAGE OUTLINE
C
0.22
0.08 TYP
0.25
3.0
2.6
2X 0.95
1.9
1.45
0.90
0.15
0.00 TYP
5X 0.5
0.3
0.6
0.3 TYP
8
0 TYP
1.9
A
3.05
2.75
B
1.75
1.45
(1.1)
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/E 09/2019
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
0.2 C A B
1
34
5
2
INDEX AREA
PIN 1
GAGE PLANE
SEATING PLANE
0.1 C
SCALE 4.000
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EXAMPLE BOARD LAYOUT
0.07 MAX
ARROUND 0.07 MIN
ARROUND
5X (1.1)
5X (0.6)
(2.6)
(1.9)
2X (0.95)
(R0.05) TYP
4214839/E 09/2019
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
PKG
1
34
5
2
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED METAL
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
EXPOSED METAL
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EXAMPLE STENCIL DESIGN
(2.6)
(1.9)
2X(0.95)
5X (1.1)
5X (0.6)
(R0.05) TYP
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/E 09/2019
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
SYMM
PKG
1
34
5
2
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