MMBT3906
Document number: DS30059 Rev. 15 - 2 1 of 4
www.diodes.com September 2009
© Diodes Incorporated
MMBT3906
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT3904)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
“Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound,
(Note 3). UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous (Note 1) IC -200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 1) PD 300 mW
Thermal Resistance, Junction to Ambient (Note 1) R
θ
JA 417 °C/W
Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View Device Schematic
E
B
C
MMBT3906
Document number: DS30059 Rev. 15 - 2 2 of 4
www.diodes.com September 2009
© Diodes Incorporated
MMBT3906
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage V
(
BR
)
CBO -40 V IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 4) V
(
BR
)
CEO -40 V IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage V
(
BR
)
EBO -5.0 V IE = -10μA, IC = 0
Collector Cutoff Current ICEX -50 nA VCE = -30V, VEB
(
OFF
)
= -3.0V
ICBO -50 nA
VCB = -30V, IE = 0
Base Cutoff Current IBL -50 nA VCE = -30V, VEB
(
OFF
)
= -3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain hFE
60
80
100
60
30
300
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage VCE(SAT) -0.25
-0.40 V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage VBE(SAT) -0.65
-0.85
-0.95 V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 2.0 12 kΩ VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 10 x 10-4
Small Signal Current Gain hfe 100 400
Output Admittance hoe 3.0 60 μS
Current Gain-Bandwidth Product fT 250 MHz VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure NF 4.0 dB VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td 35 ns VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA Rise Time t
r
35 ns
Storage Time ts 225 ns VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA Fall Time tf 75 ns
Notes: 4. Short duration pulse test used to minimize self-heating effect.
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fig . 1 Pow er D issipatio n vs. Am bi ent Te m perat ur e (No t e 1)
A
150
200
250
300
350
400
0
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Vo ltage
0.001
0.01
0.1
1
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
DC
Pw = 100ms
Pw = 10ms
T = 25°C
A
Single Non-repetitive Pulse
DUT mounted onto 1xMRP
FR-4 board
MMBT3906
Document number: DS30059 Rev. 15 - 2 3 of 4
www.diodes.com September 2009
© Diodes Incorporated
MMBT3906
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain
vs. Collector Current (DRDP02W)
C
0.01
0.1
10
1
110 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLT AGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
0.1
1
10
0.1 110 100 1,000
V , BASE-EMI
T
T
E
R
(V)
BE(SAT)
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
I , COLLECTOR CURRENT (mA)
Fig. 5 Ty pical Base-Emitter Saturation V oltage
vs. Collector Current
C
I
C
I
B
= 10
T = 25°C
A
T = 75°C
A
T = -25°C
A
T = 125°C
A
1
100
10
0.1 110 100
C
A
P
A
C
I
T
AN
C
E (p
F
)
V , REVERSE VOLTAGE (V)
Fig . 6 Typical C apac i tance Char acteristic s
R
f = 1MHz
Cibo
Cobo
Ordering Information (Note 5)
Part Number Case Packaging
MMBT3906 -7-F SOT-23 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code J K L M N P R S T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K3N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
K3N
YM
MMBT3906
Document number: DS30059 Rev. 15 - 2 4 of 4
www.diodes.com September 2009
© Diodes Incorporated
MMBT3906
Package Outline Dimensions
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
SOT-23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z