D44H Series (NPN), D45H Series (PNP) Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features * Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 V (Max) @ 8.0 A http://onsemi.com 10 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS * Fast Switching Speeds * Complementary Pairs Simplifies Designs * Pb-Free Packages are Available* MARKING DIAGRAM 4 MAXIMUM RATINGS Rating Collector-Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base Voltage Symbol VCEO VEB Collector Current - Continuous - Peak (Note 1) IC Total Power Dissipation @ TC = 25C @ TA = 25C PD Operating and Storage Junction Temperature Range TJ, Tstg Value Unit Vdc 60 80 1 5.0 2 D4xHyy = Device Code x = 4 or 5 yy = 8 or 11 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package Adc 10 20 W 70 2.0 -55 to +150 C ORDERING INFORMATION Device Symbol Shipping TO-220 50 Units/Rail Unit D44H8 D44H8G TO-220 (Pb-Free) 50 Units/Rail D44H11 TO-220 50 Units/Rail TO-220 (Pb-Free) 50 Units/Rail TO-220 50 Units/Rail D45H8G TO-220 (Pb-Free) 50 Units/Rail D45H11 TO-220 50 Units/Rail TO-220 (Pb-Free) 50 Units/Rail RqJC 1.8 C/W Thermal Resistance, Junction-to-Ambient RqJA 62.5 C/W Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds TL 275 C D44H11G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Width v 6.0 ms, Duty Cycle v 50%. D45H8 D45H11G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. October, 2011 - Rev. 11 Package Max Thermal Resistance, Junction-to-Case (c) Semiconductor Components Industries, LLC, 2011 D4xHyyG AYWW 3 Vdc THERMAL CHARACTERISTICS Characteristic TO-220AB CASE 221A-09 STYLE 1 1 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: D44H/D D44H Series (NPN), IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIII IIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 60 80 - - - - Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES - - 10 mA Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO - - 10 mA 60 40 - - - - - - 1.0 - - 1.5 - - 90 160 - - - - 50 40 - - - - 300 135 - - - - 500 500 - - - - 140 100 - - OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0 Adc) D44H8, D45H8 D44H11, D45H11 ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 2.0 Adc) (VCE = 1.0 Vdc, IC = 4.0 Adc) hFE Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc) VCE(sat) Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc) VBE(sat) - Vdc Vdc DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1.0 MHz) Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) D44H Series D45H Series Ccb pF fT D44H Series D45H Series MHz SWITCHING TIMES Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 Adc) Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) Fall Time (IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) D44H Series D45H Series td + tr D44H Series D45H Series D44H Series D45H Series http://onsemi.com 2 ns ts ns tf ns D44H Series (NPN), 1000 1000 VCE = 1 V 25C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 125C -40C 100 10 0.01 0.1 1 125C 25C 100 10 10 -40C 0.01 Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain 1000 hFE, DC CURRENT GAIN 25C -40C 100 0.01 0.1 1 100 -40C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain 0.6 0.30 -40C 0.25 0.20 25C 0.15 125C 0.10 0.05 0.1 25C IC, COLLECTOR CURRENT (AMPS) VCE(sat) @ IC/IB = 10 0.35 125C 10 10 SATURATION VOLTAGE (VOLTS) hFE, DC CURRENT GAIN VCE = 5 V 125C 0.40 SATURATION VOLTAGE (VOLTS) 10 IC, COLLECTOR CURRENT (AMPS) VCE = 5 V 0 1 IC, COLLECTOR CURRENT (AMPS) 1000 10 0.1 1 VCE(sat) @ IC/IB = 10 0.5 0.4 0.3 25C 125C 0.2 0.1 0 10 -40C 0.1 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. D44H11 ON-Voltage Figure 6. D45H11 ON-Voltage http://onsemi.com 3 10 D44H Series (NPN), 1.4 -40C 1.0 0.8 125C 0.6 25C 0.4 0.2 0 IC, COLLECTOR CURRENT (AMPS) SATURATION VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.1 1 0.6 25C 0.4 0.2 0.1 1 100 ms 10 ms TC 70 C dc DUTY CYCLE 50% 1.0 ms 0.5 0.3 0.2 D44H/45H8 D44H/45H10,11 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TA TC 3.0 60 2.0 40 TC TA 1.0 20 0 0 0 20 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Maximum Rated Forward Bias Safe Operating Area 1.0 0.7 0.5 140 160 Figure 10. Power Derating 0.1 0.1 0.02 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.03 0.01 60 100 120 80 T, TEMPERATURE (C) 0.2 0.2 0.02 40 D = 0.5 0.3 0.07 0.05 10 Figure 8. D45H11 ON-Voltage 1.0 ms 1.0 125C Figure 7. D44H11 ON-Voltage 10 0.1 0.8 IC, COLLECTOR CURRENT (AMPS) 50 30 20 1.0 -40C 1.0 IC, COLLECTOR CURRENT (AMPS) 100 5.0 3.0 2.0 VBE(sat) @ IC/IB = 10 1.2 0 10 PD, POWER DISSIPATION (WATTS) SATURATION VOLTAGE (VOLTS) 1.2 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) Figure 11. Thermal Response http://onsemi.com 4 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k D44H Series (NPN), PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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