TIP47, 50
High Voltage Power Trasnsitors
Page 1 31/05/05 V1.0
High Voltage NPN Silicon Power Transistors are designed for line operated
audio output amplifier, and switching power supply drivers applications.
Features:
•Collector-Emitter sustaining voltage- 250 - 400V (Minimum).
•1A Rated collector current.
•fT= 10MHz (Minimum) at IC= 200mA.
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case).
NPN
TIP47
TIP50
TO-220
1 Ampere
Power
Transistors
250 - 400 Volts
40 Watts
TIP47, 50
High Voltage Power Trasnsitors
Page 2 31/05/05 V1.0
Thermal Characteristics
Maximum Ratings
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 3.125 °C/W
Characteristic Symbol TIP47 TIP50 Unit
Collector-Emitter Voltage VCEO 250 400
VCollector-Base Voltage VCBO 350 500
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous
-Peak IC1.0
2.0 A
Base Current IB0.6
Total Power Dissipation at TC= 25°C
Derate above 25°C PD40
0.32
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
Figure - 1 Power Derating
TIP47, 50
High Voltage Power Trasnsitors
Page 3 31/05/05 V1.0
Parameter Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC= 30mA, IB= 0) TIP47
TIP50 VCEO(sus) 250
400 -V
Collector Cut off Current
(VCE = 150V, IB= 0) TIP47
(VCE = 300V, IB= 0) TIP50 ICEO -1.0
mA
Collector Cut off Current
(VCE = 350V, VBE = 0) TIP47
(VCE = 500V, VBE = 0) TIP50 ICES -1.0
Emitter Cut off Current
(VEB = 5.0V, IC= 0) IEBO -1.0
Electrical Characteristics (TC= 25°C unless otherwise noted)
DC Current Gain
(IC= 0.3A, VCE = 10V)
(IC= 1.0A, VCE = 10V)
hFE 30
10
150 -
Collector-Emitter Saturation Voltage
(IC= 1.0A, IB= 200mA) VCE(sat) -1.0
V
Base-Emitter On Voltage
(IC= 1.0A, VCE = 10V) VBE(on) -1.5
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(IC= 200mA, VCE = 10V, fTEST = 2.0MHz) fT10 -MHz
Small Signal Current Gain
(IC= 200mA, VCE = 10V, f = 1.0kHz) hfe 25 - -
On Characteristics (1)
(1) Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2.0%.
(2) fT= hfe •ftest.
TIP47, 50
High Voltage Power Trasnsitors
Page 4 31/05/05 V1.0
Figure - 4 “ON” Voltages Figure - 5 Turn-Off Time
Figure - 2 DC Current Gain Figure - 3 Turn-On Time
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown
safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure - 6 curve is based on TJ(PK) = 150°C; TCis
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C. At
high case temperatures, thermal limitation will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown.
Figure - 6 Active Region Safe Operating Area
IC, Collector Current (AMP) IC, Collector Current (AMP)
IC, Collector Current (AMP)
IC, Collector Current (AMP)
TIP47, 50
High Voltage Power Trasnsitors
Page 5 31/05/05 V1.0
IC(av)
maximum
(A)
VCEO
maximum
(V)
VCBO
maximum
(V)
VCE(sat)
(V)
at IC= 1A
Ptot at 25°C
(W) Package Type Part Number
1
250 350
1 40 TO-220 NPN
TIP47
400 500 TIP50
Specifications
For enquiries from all other markets
TIP47, 50
High Voltage Power Trasnsitors
Page 6 31/05/05 V1.0
Notes:
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