FDS4435A
FDS4435A Rev. D
FDS4435A
P-Channel Logic Level PowerTrench MOSFET
October 2001
Features
-9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V
RDS(ON) = 0.025 W @ VGS = -4.5 V
Low gate charge (21nC typical).
High performance trench technology for extremely
low RDS(ON).
High power and current handling capability.
ã2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-S ource Voltage ± 20 V
IDDrain Current - Continuous (Note 1a) -9 A
- Pulsed -50
PDPower Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
TJ, Tstg Operating and Storage J unction Temperature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, J unction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, J unction-to-Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS4435A FDS4435A 13’’ 12mm 2500 unit s
S
D
S
S
SO-8
D
D
D
G
5
6
8
3
1
7
4
2
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductors advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for notebook computer appli-
cations: load switching and power management, battery
charging circuits, and DC/DC conversion.
FDS4435A
FDS4435A Rev. D
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-30 V
∆BVDSS
∆TJ
Breakdown Volta ge Temperatu re
Coefficient ID = -250 µA,Referenced to 25°C-26 mV/°C
VDS = -24 V, VGS = 0 -1IDSS Zero Gate Voltage Drain Current TJ = 125°C-10 µA
IGSSF Gate-Bod y Leakag e Current , For ward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate-Bod y Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
-1 -1.7 -2 V
∆VGS(th)
∆TJ
Gate Th reshold Vol tage
Tem perat ure Coef f icient ID = -250 µA,Referenced to 25°C4.2 mV/°C
VGS = -10 V, I D = -9 A 0.015 0.017
TJ = 125°C 0.021 0.030
RDS(on) St atic Dra i n-So urce On- Resistance
VGS = -4.5 V, ID = -7 A 0.023 0.025
Ω
ID(on) On-State Drain Current VGS = -10 V , VDS = -5 V -4 0 A
gFS Forward Transconductance VDS = -10 V, ID = -9 A 25 S
Dynamic Characteristics
Ciss Input Capacitance 2010 pF
Coss Output Capacitanc e 590 pF
Crss Reverse Tran sfer Capacit ance
VDS = -15 V, VGS = 0 V
f = 1.0 MH z
260 pF
Switching Characteristics (Note 2)
td(on) Turn-On Delay Tim e 12 22 ns
trTurn-On Rise Ti me 15 27 ns
td(off) Turn-Of f Delay T ime 100 140 ns
tfTurn-Off Fall Time
VDD = -15 V, ID = -1 A
VGS = -10 V, RGEN = 6 Ω
55 80 ns
QgTotal Gate Charge 21 30 nC
Qgs Gate-Source Charge 6 nC
Qgd Gate-Dr ain Charge
VDS = -15 V, ID = -9 A
VGS = -5 V,
8nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-S ourc e Di ode Forward Current -2.1 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) 0.75 -1.2 V
trr Source -D rain Reverse R eco ve ry Time IF = - 10 A , dlF/dt = 100 A/µS36 80 ns
Notes:
1: R
qJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125° C/W when mounted
on a minimum pad.
FDS4435A
FDS4435A Rev. D
Typical Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 1020304050
-I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -3.5V
-5.0V
-6.0V -7.0V -8.0V -10V
-4.5V
-4.0V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CU RR E NT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
0
10
20
30
40
012345
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
J
= -55
O
C25
O
C
125
O
C
V
DS
= -5V
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
246810
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON RESISTANCE (OHM)
T
J
= 125
O
C
T
J
= 25
O
C
I
D
= -4.5A






-V , DRAIN-SOURCE VOLTAGE (V)
- I , DRAIN-SOU RCE CURR ENT (A)
DS
D
-4.5V
-2.5V
-4.0V
-6.0V
-3.5V
-3.0V
V = -10V
GS
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
O
C)
NORMALIZED ON-RESISTANCE
V
GS
= -10V
I
D
= -9A
FDS4435A
FDS4435A Rev. D
Typical Characteristics (continued)
0.001 0.01 0.1 1 10 100 300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =125°C/W
T = 25°C
θJA
A
Figure 7. Gate-Charge Characteristics Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TI ME (s e c )
T R ANSI ENT TH ER MAL RESIST ANC E
r(t), NORM ALIZED EF FECTI V E
1
S i n g l e P u l s e
D = 0.5
0. 1
0.05
0.02
0. 0 1
0.2
D u t y C y c l e, D = t /t
12
R (t) = r(t) * R
R = 125°C/ W
θJA
θJA
θJA
T - T = P * R (t)
θ
JA
A
J
P(pk)
t
1
t
2
0
500
1000
1500
2000
2500
0 5 10 15 20 25 30
-V
DS
, DRAIN TO SO URCE VOLTAGE ( V )
CAPACITA NCE (pF)
C
ISS
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
0
2
4
6
8
10
0 5 10 15 20 25 30 35
Q
g
, GATE CHARGE (nC)
-VGS, GATE-SOURCE VOLTAGE (V)
I
D
= -8.8A V
DS
= -5V -10V
-15V
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
DC10s
1s100ms
10ms
1ms100µs
R
DS(ON)
LIMIT
V
GS
= -10V
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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