PNP SWITCHING SILICON
TRANSISTOR
2N3867SMD05
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 7960
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(3)
Collector-Emitter
Breakdown Voltage IC = 20mA IB = 0 40 V
VCE = 40V VEB = 2V 1.0
ICEX Collector Cut-Off Current
TA = 150°C 50
µA
ICBO Collector Cut-Off Current VCB = 40V IE = 0 100
IEBO Emitter Cut-Off Current VEB = 4V IC = 0 100
µA
IC = 500mA VCE = 1.0V 50
TA = -55°C 25
IC = 1.5A VCE = 2V 40 200
IC = 2.5A VCE = 3V 25
hFE
(3)
Forward-current transfer
ratio
IC = 3A VCE = 5V 20
-
IC = 500mA IB = 50mA 0.5
IC = 1.5A IB = 150mA 0.75
VCE(sat)
(3)
Collector-Emitter Saturation
Voltage
IC = 2.5A IB = 250mA 1.5
IC = 500mA IB = 50mA 1.0
IC = 1.5A IB = 150mA 0.9 1.4
VBE(sat)
(3)
Base-Emitter Saturation
Voltage
IC = 2.5 IB = 250mA 2
V
DYNAMIC CHARACTERISTICS
IC = 100mA VCE = 5
hfe
Magnitude of common-
emitter small-signal short-
circuit forward-current
transfer ratio f = 20MHz
3 12
Cobo Output Capacitance VCB = 10V
IE = 0
f = 1 MHz
120
Cibo Input Capacitance VEB = 3V
IC = 0
f = 1 MHz
800
pF
td Delay Time VCC = -30V VEB = 0V 35
tr Rise Time IC = 1.5A ,IB1 = 150mA 65
ts Storage Time VCC = -30V VEB = 0V 500
tf Fall Time IC = 1.5A ,IB1 = IB2 = 150mA 100
ns
Notes
NotesNotes
Notes
(1) Derate Linearly 200mW/
°C for TC
> 25
°C
(2) Derate Linearly 5.7mW/
°C for TA
> 25
°C
(3) Pulse Width ≤ 300us, δ ≤ 2%