Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6408
Issue 1
2N6757
N-CHANNEL ENHANCEMENT
MODE TRANSIST OR
FEATURES
•V
(BR)DSS = 150V
•I
D = 8.0A
•R
DSON = 0.6ΩΩ
VDS Drain–Source Voltage
VGS Gate–Source Voltage
IDDrain Current Continuous TCase = 25°C
TCase = 100°C
IDM Drain Current Pulsed
PDTotal Device Dissipation @ TCase = 25°C
TCase = 100°C
TJ, TSTG Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction to Case
RθJA Thermal Resistance Junction to Ambient
TLMaximum Lead Temperature 1.6mm from Case for
10 secs.
150V
±20V
8A
5A
12A
75W
30W
–55 to +150°C
1.67°C/W
30°C/W
300°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–3 PACKAGE (TO-204AA)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Gate Underside View
PIN 2 – Source CASE – Drain
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain–Source Breakdown Voltage
VGS(th) Gate Thresshold Voltage
IGSS Gate–Source Leakage
IDSS Zero Gate Voltage Drain Current
rDS(on) Drain–Source On–Resistance1
gfsForward Transconductance1
Ciss Input Capacitance
Coss Output capacitance
Crss Reverse Transfer Capacitance
td (on) Turn–On Delay Time
trRiseTime
td (ofF) Turn off Delay Time
tfFallTime
VSD Diode Forward Voltage1
ISContinues Current
ISM Pulsed Current2
trr Reverse Recovery Time
Qrr Reverse Recovered Charge
VGS = 0 ID= 1.0mA
VDS=VGS ID= 1.0mA
VDS = 0 VGS = ±20V
VDS =150V
VGS = 0 Tj = 125°C
VGS = 10V ID= 5A
VDS = >15V ID= 6A
VDS = 25V VGS = 0
f = 1.0MHZ
VDD = 90V
ID= 6A
RG = 15Ω
VGS = 0 IS= 8A
IF= 12A Tj = 150°C
dIF/dT = 100A/µS
150
2.0 4.0
±100
0.1 1.0
0.2 4.0
0.4 0.6
3.0 5.0 9.0
350 600 800
100 250 450
40 80 150
30
50
50
40
0.75 1.50
8.0
12
650
10
V
nA
mA
Ω
s( )
pF
ns
V
A
ns
µC
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6408
Issue 1
ELECTRICAL CHARACTERISTICS (TJ= 25°C unless otherwise stated)
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
2) Pulse width limited by maximum juction temperature
SOURCE DRAIN DIODE RATING CHARACTERISTICS
Ω
2N6757
