-- Numerical Index 2N2618 -2N2717 a] > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS =/= = = = = || REPLACE. | PAGE Po [SB] Ta | Ves | Voce | fre @ Io Veesan @ Ie 2/ ft | RE ETS | ment | numaer | USE & B| Salm EL owl B =|o @25C |B] C | (wolts) | (volts) | | (min) (max) 5} (volts) = 3 3/2 2N2618 SIN VID 0,6W |] A | 200 60 40] 0 25 10M 30/1 E 200M | T 2N2619 Thyristor, see Table on Page 1-154 2N2620 | Field Effect Transistor, see Table on Page 1-166) 2N2621 G] P RFC 150M | J | 100 15 15/8 i5 1,0M 2N2622 G| P RFC 150M | J | 100 24 2415S 15 1.0M 2N2623 G| P RFC 150M | J | 100 32 32 |S 20 1.0M 2N2624 G{ P RFC 150M | J j 100 15 15] Ss 20 1.0M 2N2625 G| P RFC 150M } J | 100 24 241/58 15 L.OM 2N2626 G) P REC 150M | J} 100 32 3218 20 1.0M 2N2627 G] P RFC 150M | J | Loo 15 15] Ss 15 1.0M 2N2628 G}] P RFC 150M | J | 100 24 24]S8 15 1.0M 2N2629 GLP REG 150M | J {100 32 3215S 10 1,0M 2N2630 G | P HSS 300M | A | 100 18 10] 90 25 100M | 0.45 LOOM 3.0}E 2N2631 S| N AFA | 8.75W | C | 200 80 80 | V | 8.0 200M 2N2632 S| N ] 2N3487 7-115} LPA 40W | Cc] 175 90 60,0 40 | 120 1.0A [0.25 1.0A 40 | E 20M | T 2N2633 S| Nf} 2N3488 7-115] LPA 40w | Cc } 175 120 80} 0 40 | 120 1.0A |0.25 1.0A 40 {E 20M | T 2N2634 S| N | 2N3489 7-115 | LPA 40W [C1] 175 150 100 | 0 40 { 120 1.0A | 0.25 L.OA 40 /E 20M/T 2N2635 GI] P 8-153] HSS 150M | A | 100 30 12 |0 45 | 300 50M 0.2 10M 150M | T 2N2636 GIP PMS LooW | c {| 110 100 60 [0 20 80 254 10.65 254 Q.6M |T 2N2637 G] P PMS LooWw { c | 110 100 6040 20 80 25A 10.65 25A 0.6M {T 2N2638 G| P PMS 1oOW | c | 110 L100 60 | 0 20 80 254 10.65 254 0.6M | T 2N2639 S| N 11-11] DFA 300M | A |} 200 45 45 |0 50 | 300 10* 1.0 10M 65 4E 35M | T 2N2640 Sj)N 11-11) DFA 300M ) A } 200 45 45] 0 50 1 300 10* 1.6 10M 65 |/E 35M |T 2N2641 S|N Ll-1i1j] DFA 300M | A { 200 45 45,0 50 | 300 10* 1.90 10M 65 |E 35M | T 2N2642 S| N 11-11] DFA 300M | A | 200 45 45 | 0 | 100 | 300 Lo* 1.0 10M 130 | E 35M |T 2N2643 $7] N 11-11) DFA 300M |] A | 200 45 45 | 0] 100 } 300 10* 1.0 LOM 130 | E 35M | T 2N2644 S| N 11-11] DFA 300M {| A j 200 45 45 | 0 } 100 | 300 10* 1.0 10M 130 | E 35M | T 2N2645 S|N DFA 500M | A |} 200 75 50} R | 100 | 300 150M 0.4 LOM 75 |E 50M | T shoes Unijunction Transistors, see Table on Page 1-174 2N2648 G| P MSA 5.0W {Cc | 100 35 10 4,0 80 | 500 L.0A 0.4 L.OA 10M | T 2N2649 S|N HPA 8.7W | Cc | 200 65 65 [0 10 O.5A 100M | T 2N2650 S]N HPA 8.7W) Cc } 200 140 140] 0 10 O.5A LOOM | T 2N2651 S|N | 2N2501 8-148 | HSS 360M + A ;{ 200 40 20]0 25 10M | 0.25 10M 350M | T 2N2652 S| N 11-13] DFA 0.3W] A | 200 100 60 {0 50 | 200 L.0OM 1.2 50M 50 ])E 60M | T 2N2652A |S |N 11-13 | DFA 0.3W | A | 200 Loo 60 | 0 50 | 200 L.OM 1.2 50M 50 \E 60M | T 2N2653 Thyristor, see Table on Page 1-154 2N2654 G{P RFC O.IWIA 75 25 25 1.0M 2N2655 S|[N LPA 15W | c | 200 100 100 | 0 30 90 0,24 2.0 0,24 30 |E {0.25M |E 2N2656 S|]N RFA | 0.36W | & | 200 25 15 |0 160 O.1M 0.5 LOM 250M | T 2N2657 S|N PMS | 1.25W | A | 200 80 6010 40} 120 L.0A 0.5 1.04 20M | T 2N2658 S|N PMS | 1.25W ; A | 200 100 80 | 0 40 | 120 1.0A 0.5 1.0A 20M | T 2N2659 G}P LPA 15W | c | 100 50 50 |V 30 90 500M | 0,2 500M 30 {E 280K | T 2N2660 G| P LPA 15W | co | 100 70 70 )V 30 90 500M 0,2 500M 30 | E 280K | T 2N2661 G]P LPA 15w ic | 100 90 90 /1V 30 90 500M 0.2 500M 30 |E 280K | T 2N2662 G]P LPA 15W | c {100 30 50] V 30 90 500M 0.2 500M 30] 280K | T 2N2663 G\P LPA isWw}c | 100 79 7O\ 30 90 500M 0.2 500M 30 )E 280K | T 2N2664 G|P LPA 15W ]c | 100 90 90], V 30 90 500M 0.2 500M 30 /)E 280K | T N2665 G LPA 1aW [2 i100 20 oO | V 50 | 150 S5QoM | 0,2 20 {FE | 300K | T 2N2666 G| P LPA 15W | c { 100 70 7O|V 50 | 150 500M 0.2 500M 50 ,E 300K |T 2N2 667 G]P LPA 15w | c | 100 90 90 | V 50 {150 500M 0,2 500M 50 |E 300K | T 2N2668 G| P LPA usw | c | 100 50 50; V 50 | 150 500M 0.2 500M 50 |E 300K | T 2N2669 G| P LPA 15W ;c ; 100 70 7O/V 50 | 150 500M 0.2 500M 50 ;E 300K | T 2N2670 GuP LPA uw | c | 100 70 TOV 50 | 150 500M. Q.2 500M 50 )E 300K | T 2N2671 G| P RFC O.lW /]A 75 25 40 1.0M 2N2672 G|P RFC O.IW]A 90 25 40 1.0M 2N2672A PR RFC O.1W/A 90 32 32 |S 40 1.0M 2N2673 Ss] N AFA 250M | A | 200 60 45 ]0 |]8.0 22 1.0M 1.5 5.0M 9.0 }E 2,5M/B 2N2674 S|N AFA 250M | A | 200 60 4510 12 40 1.0M 1.5 5.0M 18 /E 5.0M/B 2N2675 S|N AFA 250M {A | 200 60 45 | 0 22 76 1. 0M 1.5 5.0M 37 | E LOM | B 2N2676 S|N AFA 250M [| A | 200 60 45 |0 45 | 290 1L.OM L.5 5.0M 76/5 10M |B 2N2677 S|N AFA 250M | A | 200 45 35 ]0 20 55 1,.0M L.5 5.0M 19 |E LOM | B 2N2678 S| N AFA 250M {A | 200 45 35 ]0 45 ; 150 1.0M 1.5 5.0M 39 | E 20M |B 2N2679 thru Thyristors, see Table 2N2690 2N2691 GI} P 100 80 | Oo 30 | 100 20A | 0,65 20A 6.0M | T 2N2691A |G] P 120 80] 0 50 | 100 20M 2N2692 SIN 45 3040 90 | 360 100* | 0,12 Loo* 42M/T 2N2693 S|TN 45 30/0 40 10* | 0.12 100* 42M | T 2N2694 S|N 45 2010 20 Lo* 10,12 Log* 42M | T 2N2695 S]P 25 2570 30 | 130 50M | 0.25 50M 25 /E 100M | T 2N2696 S| P | 2N2837 8-161 25 25 190 30 | 130 50M | 0.25 50M 25] 100M | T 2N2697 SIN PMS L8W | c | 200 80 60 [0 40 | 120 1.0A 0.5 L.0A 20M | T 2N2698 s|N PMS 18W | c | 200 100 80 | 0 40 | 120 1.0A 0.5 1.04 20M | T 2N2699 G| P |] 2N964 8-74 HSS 150M | A | 100 15 8.0/0 40 | 200 10M | 0,18 10M 300M | T 2N2706 G|P AFG O.5W TA 75 32 32 |S 65 | 120 20M 80 L.3M 1B 2N2707 G IN P Matched Pair; 2N2430 (NPN) and 2N2706 (PNP) 2N2708 sy N 8+155 | RFC 200M | A | 200 35 20190 30 | 200 2.0M 30 [E 2N2709 S| P | 2N2800 8-161) AFA 240M | A | 160 50 35 | 0 10 22 0.2M 0.4 8.0M 200K | B 2N2710 S|N 8-159] HSS 360M | A {200 40 20 [0 40 LOM {0.25 10M 500M | T 2N2711 S| N | MPS2711 5-78 AFC O.2W | A [125 18 18 [0 30 90 2.0M 30], E 2N2712 S| N | MPS2712 5-78 AFC 0,2W | A | 125 18 18/0 75 | 225 2.0M 80]7E 2N2713 S| N | MPS2713 5-80 AFC O.2W TA | 125 18 18] 0 30 90 2.0M 0.3 50M 30/E 2N2714 S| N | MPS2714 5-80 AFC Q.2W [A 1125 18 1g joa 75 | 225 2.0M 0.3 50M 80) E 2N2715 S| N | MPS2715 5-78 AFC O.2Wy}A {125 18 1810 30 90 2.0M 30/E 2N2716 S| N | MPS2716 5-78 AFC 0,2W | A | 125 18 18/0 75 | 225 2.0M 80] E 2N2717 G|P HSS O,1WIA 75 20 15 ]0 50 30M |0.35 10M 300M | T 1-13]UNIJUNCTION TRANSISTORS INDEX Numerical Index 2N489- 2N4949 PAGE Pp Reg Mmin) Ip(max, leo @ Ven2 VEsan TYPE =| REPLACEMENT | NuMBER | (mW) (ko) " (ma) | uA) | uA@Vmax) | 1-@50mA) 2N489 450 6.8 0,62 8.0 20 12 @ 60 5.0 2N489A 450 6.8 0.62 8.0 15 12 @ 60 4.0 2N489B 450 6.8 0.62 8.0 6.0 0.2 @ 60 4.0 2N490 450 9.1 0.62 8.0 20 12 @ 60 5.0 2N490A 450 9.1 0.62 8.0 i5 12 @ 60 4.0 2N490B 450 9.1 0.62 8.0 6.0 0.2 @ 60 4.0 2N490C 450 9.1 0.51 2N491 450 6.8 0.68 8.0 20 12 @ 60 5.0 2N491A 450 6.8 0.68 8.0 15 12 @ 60 4.3 2N491B 450 6.8 0.68 8.0 6.0 0.2 @ 60 4.3 2N492 450 9.1 0,68 8.0 20 12 @ 60 5.0 2N492A 450 9.1 0.68 8.0 15 12 @ 60 4.3 2N492B 450 9.1 0.68 8.0 6.0 0.2 @ 60 4.3 2N492C 450 9.1 0.56 2N493 450 6.8 0.75 8.0 20 12 @ 60 5.0 2N493A 450 6.8 0.75 8.0 15 2N493B 450 6.8 0.75 8.0 6.0 0.2 @ 60 5.0 2N494 450 9.1 0.75 8.0 20 12 @ 60 5.0 2N494A4 450 9.1 0.75 8.0 15 12 @ 60 4.6 2N494B 450 OL 0.75 8.0 6.0 0.2 @ 60 4.6 2N494C 450 9.1 0.62 8.0 2.0 0.02 @ 60 4.6 2N1L671 450 9.1 0.62 8.0 25 12 @ 30 5.0 2NL671A 450 9.1 0.62 8.0 25 12 @ 30 5.0 2N1671B 450 9.1 0.62 8.0 6.0 0.2 @ 30 5.0 2N1671C 450 4.1 -9.1 2N2160 450 4.0 -12 0.47 -0.80 8.0 25 12 @ 30 2N2417 390 0.68 0.62 8.0 20 12 @ 60 5.0 2N2417A 390 6.68 G.62 8.0 26 12 @ 60 4,0 2N2417B 300 6.8 0.51 -0.62 8.0 6.0 0.2 @ 30 4.0 2N2418 390 0.68 0.62 8.0 20 12 @ 60 5.0 2N2418A 390 9.1 0.62 8.0 20 12 @ 60 4.0 2N2418B 300 9.1 0.51 - 0.62 8.0 6.0 0.2 @ 60 4.0 2N2419 390 4.7 -6.8 0.68 8.0 20 12 @ 60 5.0 2N2419A 390 6.8 0.68 8.0 20 12 @ 60 4.3 2N2419B 300 6.8 0.56 -0.68 8.0 6.0 0,2 @ 30 4.3 2N2420 390 9.1 0.68 8.0 20 12 @ 60 5.0 2N2420A 390 9.1 0.68 8.0 20 12 @ 60 4.3 2N2420B 300 9.1 0.56 -0.68 8.0 6.0 0.2 @ 30 4.3 2N2421 390 6.8 0.75 8.0 20 12 @ 60 5.0 2N2421A 390 6.8 0.75 8.0 20 12 @ 60 4.6 2N2421B 300 6.8 4.7 -6.8 8.0 6.0 0.2 @ 30 4,6 2N2422 390 9.1 0.75 8.0 20 12 @ 60 5.0 2N2422A 390 9.1 0.75 8.0 20 12 @ 60 4,6 2N2422B 300 9.1 0.62 -0.75 8.0 6.0 0.2 @ 30 2N2646 4-70 300 4.7 (min) 0.56 4.0 25 12 @ 30 2.0 2N2647 4-70 300 4.7 (min) 0.68 8.0 2.0 0.2 @ 30 2.0 2N2840 300 4.7 -9.1 1.3 -1.5 0.70 10 1.0 @ 30 2N3406 450 8.0 2N3479 400 4,7 -9.1 0,47 -0.62 6.0 20 12 @ 30 5.0 2N3480 400 9.1 0.75 4.0 15 12 @ 30 5.0 2N3481 400 9.1 0.85 6.0 15 12 @ 30 5.0 2N3482 400 4.7 -6.8 0.51 -0.62 8.0 2.0 0.02 G@ 30 5.0 2N3483 400 9.1 0.72 8.0 2.0 1.0 @ 30 5.0 2N34 84 400 9.1 0.85 8.0 2.0 0.2 @ 30 5.0 2N3679 250 9.1 0.80 4.2 2N3980 4-72 360 8.0 2N4851L 4-74 300 4.7 (min) 0.56 (min) 2.0 2.0 0.1 @ 30 2.5 2N4852 4-74 300 4.7 (min) 0.70 (min) 4.0 2.0 0.1 @ 30 2.5 2N4853 4-74 300 4.7 (min) 0.70 (min) 6.0 0.4 0.05 @ 30 2.5 2N4870 4-78 300 4.0 (min) 0.56 (min) 2.0 5.0 0.05 @ 30 2.5 2N4871 4-78 300 4.0 (min) 0.70 (min) 4.0 5.0 0.05 @ 30 2.5 2N4891 300 4.0 (min) 0.55 (min) 2.0 5.0 0.01 @ 30 4.0 2N4892 300 4.0 (min) 0.51 (min) 4.0 2.0 0.01 @ 30 4,0 2N4893 300 4.0 (min) 0.55 (min) 2.0 2.0 0.01 @ 30 4.0 2N4894 300 4.0 (min) 0.74 (nin) 2.0 1.0 0.01 @ 30 4.0 2N4948 4-82 360 4.0 (min) 0.55 (min) 2.0 2.0 0.01 @ 30 2.5 2N4949 4-82 360 4.0 (min) 0.74 (min) 2.0 1.0 0.01 @ 30 2.5 1-175XAANAAAAAAAAAAAAAAANARAAARARNAAAARARARRA ASSAD Thyristors THYRISTOR SELECTOR GUIDE (continued) BIDIRECTIONAL THYRISTORS TRIACS (8.0 AMP RMS) 50V MAC1-2 MAC2-2 ip MAC3-2 Vaom oF Peal i Blocking 200 V MAC1-4 4 P MAC2-4 ea MAC3-4 Voltage ll 400 V MAC1-6 Case 85 MAC2-6 Case 86 MAC3-6 L Case 87L BILATERAL TRIGGER DIODES (3-layer diodes) Vear) Ipube Von) av Breakover Voltage Peak Pulse Current Breakover Current Switchback Voltage (Both Directions) @ 30 us, 120 Hz (Both Directions) (Both Directions) Type Volts (Nom) Amp (Max) LA (Max) Volts (Min) MPT28 28 2.0 50 1.0 Case 298 MPT32 32 2.0 50 7.0 UNIJUNCTION TRANSISTORS Ip lea20 Wv Pp Ve2s1 Peak Point Emitter Intrinsic Valley Point Power Interbase Emitter Current Reverse Current Standoff Ratio Current Dissipation Voltage Type pA (Max) 1A (Max) Min Max mA (Min) mW Volts 2N4870 5.0 1.0 0.56 0. 75 2.0 300 35 Case 2919) 2N4871 5.0 1.0 0.70 0. 85 4.0 300 35 2N2646 5.0 12.0 0.56 0. 75 4.0 300 35 2N2647 2.0 0.2 0. 68 0. 82 8.0 300 2N3980 2.0 0.01 0. 68 0.82 1.0 360 2N4851 2.0 0.1 0. 56 0.75 2.0 300 2N4852 2.0 0.1 0.70 0.85 4.0 300 2N4853 0.4 0. 05 0.70 0. 85 6.0 300 35 Case 22A 4-LAYER DIODES (Peak Pulse Current = 10 Amp @ PW = 50 ys Max) Viswe Vieme | Forward I Forward H jolding Breakover Holding Breakover Current Voltage Current Voltage @ @T,=25 | @T,=25C @T,= 25C |T,=25C Volts mA Volts mA Type" Min/Max Min/Max Type Min/Max Min/Max 1}, = 150 mA (Max) |, = 180 mA (Max) 1N5158(M4L3052) 8/10 4/20 M4L40-3 36/44 1/6 1N5159(M4L3053) 9/11 1/20 M4L40M-3 36/44 1/6 1N5160(M4L3054) 10/12 1/20 M4L40-8 36/44 1/15 |, = 180 mA (Max) M4L40M-8 36/44 1/15 M4L40-28 36/44 14/45 M4L20-3 16/24 1/6 M4L40M-28 36/44 14/45 M4L20M-3 16/24 1/6 M4L40A 34/46 0. 5/80 MAL20-8 36/24 AAs M4L50-3 46/54 1/ 6 M4L20M-8 16/24 1/15 M4L50M-3 46/54 1/6 M4L20-28 16/24 14/45 M4L50-8 46/54 1/15 M4L20M-28 16/24 14/45 M4L50M-8 48/54 1/15 MAL20A 14/26 9.5/60 M4L50-28 46/54 14/45 M41L30-3 26/34 1/ 6 M4LS50M-28 46/54 14/45 Case 51 M4L30M-3 26/34 1/6 M4L50A 44/56 0. 5/60 (00-7) M4L30-8 26/34 1/15 M4L30M-8 26/34 1/15 *suffix "M" designates guaranteed ViBR)F unit over the Noten 3a iis temperature range, T, = -60 to +125C. M4L30A 24/36 0. 5/60 4-6Unijunction Transistors 2N2646 (siLicon) 50 nA 2N2647 P, = 300 mW Silicon annular PN unijunction transistors designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. CASE 22A (Lead 3 connected to case) MAXIMUM RATINGS (T, = 25C unless otherwise noted) Rating Symbol Value Unit RMS Power Dissipation* Pp 300* mW RMS Emitter Current Te 50 mA Peak Pulse Emitter Current** ie 2** Amp Emitter Reverse Voltage VB2F 30 Volts Interbase Voltage VpoB1 35 Volts Operating Junction Temperature Range Ty -65 to +125 % Storage Temperature Range T stg -65 to +150 SC * Derate 3.0 mW/C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-T'wo) must be limited by the external circuitry. ** Capacitor discharge 10 :F or less, 30 volts or less. 4-702N2646, 2N2647 (continued) Unijunction Transistors ELECTRICAL CHARACTERISTICS 7, - 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Intrinsic Standoff Ratio _ (Vpapi = 10 V) (Note 1) 2N2646 0,56 0.75 2N2647 0.68 - 0. 82 Interbase Resistance Rap K ohms (Vpepi = 3V. lp = 9) 4a? 7.0 9.1 Interbase Resistance Temperature Coefficient oR. 4/c (Vpapi = 3 V, Ig = 0, Ta = -55C to +125C) BB 0.1 0.9 Emitter Saturation Voltage VEBI (sat) Volts (Vpopi = 10 V, Ig = 50 mA) (Note 2) - 3.5 _ Modulated Interbase Current } A 'B2(mod, m (Vpn = 10 V, Ig = 50mA) (moa) - 15 - Emitter Reverse Current Tro HA (par = 30 V, Igy = 0) 2N2646 _ 0. 005 12 2N2647 -_ 0. 005 0.2 Peak Point Emitter Current Ip DA (Vgani = 25 V) 2N2646 _ 1.0 5.0 2N2647 _ 1.0 2.0 Valtey Point Current ly mA (Vp2p1 = 20 V, Rg = 100 ohms) (Note 2) 2N2646 4.0 6.0 _ 2N2647 8.0 10 18 Base-One Peak Pulse Voltage Vopi Volts (Note 3, Figure 3) 2N2646 3.0 5.0 2N2647 6.0 7.0 _ NOTES 1. Intrinsic standoff ratio, is defined by equation: n= Ye Mea) Vezet Where Vp = Peak Point Emitter Voltage Vagg1 = Interbase Voltage Viegi) = Emitter to Base-One Junction Diode Drop (~0.5V @ 10 pA) FIGURE 1 UNIJUNCTION TRANSISTOR SYMBOL 2. Use pulse techniques: PW ~ 300 us duty cycle =2% to avoid internal heating due to interbase modulation which may result in erroneous readings. 3. Base-One Peak Pulse Voltage is measured in circuit of Figure 3. This specification is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits. FIGURE 2 STATIC EMITTER CHARACTERISTIC CURVES AND NOMENCLATURE (Exaggerated to Show Details) Is2 Ve _ NEGATIVE OO CUTOFF fee RESISTANCE @t- SATURATION { REGION t REGION ' REGION 7 | Vo TFS peak POINT | le > Be \ EMITTER TO , | BASE-1 | CHARACTERISTIC 1 5 Vara Vesijut) +4 Ve Ww +4+--~-> Ip y le q >|) fe o---_-__4 leo 4-7] FIGURE 3 ,,,, TEST CIRCUIT (Typical Relaxation Oscillator)