Microsemi
Page 1
Copyright 2005
Rev. 0, 2006-01-17
WWW.Microsemi .COM
1N5767 (5082-3080) SERIES
1N5957
SERIES
DESCRIPTION
The 1N5767 and the 1N5957 PIN diodes
are based upon low capacitance PIN chips
designed with long minority carrier lifetime,
and thick intrinsic width. Thus operation as
low as 1 MHz is possible with low
distortion. Additionally, the low diode
capacitance allows useful operation well
into the microwave frequency range.
The 1N5767 (5082-3080) is a general
purpose low power PIN diode designed for
Both switch and attenuator applications.
The 1N5957 is primarily used as an attenuator
PIN diode and is particularly suitable wherever
current controlled, wide dynamic range resistance
elements are required. The 1N5957 has also been
characterized for the 75Ω attenuator, commonly
employed in CATV systems.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Reverse Voltage
VR (IR = 10 µA) 100 V
Average Power Dissipation: (25 oC)
Free Air (PA) 400 mW (Derate linearly to 175 oC)
Operating and Storage
Temperature Range -65 oC to +175 oC
KEY FEATURES
Useful attenuation from 1 µA
to 100 mA bias
Capacitance below 0.4 pF
Low distortion in switches and
attenuators
Metallurgical bond
Sealed in glass
Thermally matched construction
APPLICATIONS/BENEFITS
Surface mount package available
RoHS compliant packaging
available
1
1N
N5
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/1
1N
N5
59
95
57
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Microsemi
Page 2
Copyright 2005
Rev. 0, 2006-01-17
WWW.Microsemi .COM
1N5767 (5082-3080) SERIES
1N5957
SERIES
-3
10 -2
10 -1
10 0
10 1
10 2
10
If (mA)
20000
1
10
100
1000
10000
Rs (Ohms)
Rs versus If
TYPICAL
1N5767 (3080)
1N5957
f = 100 MHz
Parameter Symbol Conditions 1N5767 1N5957 Units
Total Capacitance (Max) CT V
R=100V, F= 1 MHz 0.4 0.4 pF
Series Resistance RS If = 10 µA, F= 100 MHz 1000Ω(min)
2000Ω(typ)
1500Ω(min)
3000Ω(typ)
Ohms
Series Resistance RS If = 20 mA, F = 100 MHz 8Ω(max)
4Ω(typ)
8Ω(max)
6Ω(typ)
Ohms
Series Resistance RS If = 100 mA, f = 100 MHz 2.5Ω(max)
1.5Ω(typ)
3.5Ω(max)
2.0Ω(typ)
Ohms
Carrier Lifetime τ I
F = 10 mA 1.0(min) 1.5(min)
2.0(typ)
µs
Reverse Current IR V
R = Voltage rating 10(max) 10(max) µA
Current for Rs = 75Ω I75 Rs = 75Ω 0.7 0.8 – 1.2 mA
Return Loss - Diode terminates 75Ω line 30(typ) 30(typ) dB
Second Order Distortion - Bridged tee attenuator
Attenuation = 10 dB
-40(typ) -50(typ) dB
Third Order Distortion - Pin = 50 dBmv
F1 = 10 MHz
F2 = 13 MHz
-60(typ) -65(typ) dB
E
EL
LE
EC
CT
TR
RI
IC
CA
AL
LS
S
Microsemi
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Copyright 2005
Rev. 0, 2006-01-17
WWW.Microsemi .COM
1N5767 (5082-3080) SERIES
1N5957
SERIES
0.0 0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE (V)
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
FORWARD CURRENT (A)
FORWARD VOLTAGE versus CURRENT
1N5767 1N5957
2001 10 100
Vr (V)
0.2
0.3
0.4
0.5
0.6
0.7
0.8
CAPACITANCE (pF)
Ct versus Vr
TYPICAL
1 MHz
5 MHz
10 MHz
=> 100 MHz
E
EL
LE
EC
CT
TR
RI
IC
CA
AL
LS
S
Microsemi
Page 4
Copyright 2005
Rev. 0, 2006-01-17
WWW.Microsemi .COM
1N5767 (5082-3080) SERIES
1N5957
SERIES
2001 10 100
Vr (V)
10
100
20
30
40
50
60
70
80
Rp (kOhms)
PARALLEL RESISTANCE versus REVERSE VOLTAGE
TYPICAL
100 MHz 500 MHz
1 GHz
3 GHz
E
EL
LE
EC
CT
TR
RI
IC
CA
AL
LS
S
Microsemi
Page 5
Copyright 2005
Rev. 0, 2006-01-17
WWW.Microsemi .COM
1N5767 (5082-3080) SERIES
1N5957
SERIES
NOTES:
N
NO
OT
TE
ES
S
