MMBTA13 NPN Darlington Transistor * This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. * Sourced from process 05. * See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25C unless otherwise noted Value Units VCES Collector-Emitter Voltage Parameter 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C - Continuous Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CES Collector-Emitter Breakdown Voltage IC = 100A, IB = 0 ICBO Collector-Cutoff Current VCB = 30V, IE = 0 100 nA IEBO Emitter-Cutoff Current VEB = 10V, IC = 0 100 nA 30 V On Characteristics * hFE DC Current Gain VCE = 5.0V, IC =10mA VCE = 5.0, IC = 100mA VCE (sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 0.1mA 1.5 V VBE (on) Base-Emitter On Voltage IC = 100mA,VCE = 5.0V 2.0 V 5,000 10,000 Small Signal Characteristics fT Current Gain Bandwidth Product IC = 10mA, VCE = 10V, f = 100MHz 125 pF * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2005 Fairchild Semiconductor Corporation MMBTA13 Rev. B 1 www.fairchildsemi.com MMBTA13 NPN Darlington Transistor January 2005 Symbol Parameter PD Total Device Dissipation Derate above 25C RJC Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Max. Units 350 2.8 mW mW/C C/W 357 C/W * Device mounted on FR-4PCB 1.6" x 1.6" x 0.06". 2 MMBTA13 Rev. B www.fairchildsemi.com MMBTA13 NPN Darlington Transistor Thermal Characteristics Ta=25C unless otherwise noted MMBTA13 NPN Darlington Transistor Mechanical Dimensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters 3 MMBTA13 Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 MMBTA13 Rev. B www.fairchildsemi.com MMBTA13 NPN Darlington Transistor TRADEMARKS