S-1009 Series
www.sii-ic.com
SUPER-LOW CURRENT CONSUMPTION SUPER HIGH-ACCURACY VOLTAGE
DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
© Seiko Instruments Inc., 2009-2011 Rev.5.0_01
Seiko Instruments Inc. 1
The S-1009 Series is a super high-accuracy voltage detector developed using CMOS process. The detection voltage is
fixed internally with an accuracy of ±0.5%. It operates with super lo w current consum pti on of 2 70 nA typ.
The release signal can be delayed by setting a capacitor externally. Delay time accuracy is ±15%. Two output forms Nch
open drain and CMOS output are av ai lable.
Compared with convent ional CMOS voltage detectors, th e S-1009 Series is the most suita ble for the portable devic es due
to the super-low current consumption, su per high-acc urac y and sm all pac kages.
Features
Super-low current consumpti on 270 nA typ. (1.2 V VDET < 2.3 V)
Super high-accurac y detecti on voltag e ±0.5% (2.4 V VDET 4.6 V)
±12 mV (0.8 V VDET < 2.4 V)
Operating voltage r ange 0.6 V to 10.0 V (CMOS output products)
Hysteresis characteristics 5% ±1%
Delay time accuracy ±15% (CD = 4.7 nF)
Detection voltage 0.8 V to 4.6 V (0.1 V step)
Output form Nch open drain output (Active “L”)
CMOS output (Active “L”)
Lead-free (Sn 100%), halo gen-free *1
*1. Refer to “ Product Name Structure” for details.
Applications
Power monitor and reset for CPUs a nd micr ocomputers
Constant voltage power monitor for TVs, DVD recorders an d hom e appl ia nces
Power supply monitor for por table dev ices s uch as notebo ok PCs, digita l still cam eras and mo bile p hones
Packages
SC-82AB
SOT-23-5
SNT-4A
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
2
Block Diagrams
1. Nch open drain output products
VSS
*1
*1
V
REF
+
OUT
VDD
CD
Delay
circuit
*1
*1. Parasitic diode
Figure 1
2. CMOS output products
VSS
*1
*1
V
REF
+
OUT
VDD
CD
Delay
circuit
*1
*1
*1. Parasitic diode
Figure 2
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 3
Product Name Structure
Users can select the detection voltage value, output form, and package type for the S-1009 Series. Refer to “1.
Product name” regarding the contents of product name, “2. Packages” regarding the package drawings and “3.
Product name list” regarding details of product nam e.
1. Product name
S-1009 x xx I xxxx U
Output form
N: Nch open drain output (Active “L”)
C: CMOS output (Active “L”)
Package abbreviation and IC packing specifications*1
N4T1: SC-82AB, Tape
M5T1: SOT-23-5, Tape
I4T1: SNT-4A, Tape
Detection voltage value
08 to 46
(e.g., when the detection voltage is 1.5 V, it is expressed as 15.)
Environmental code
U: Lead-free (Sn 100%), halogen-free
*1. Refer to the tape specifications.
2. Packages
Drawing code
Package name Package Tape Reel Land
SC-82AB NP004-A-P-SD
NP004-A-C-SD
NP004-A-C-S1 NP004-A-R-SD
SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD
SNT-4A PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD PF004-A-L-SD
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
4
3. Product name list
3. 1 Nch open drain output products
Table 1
Detection volta ge SC-82AB SOT-23-5 SNT-4A
0.8 V ± 12 mV S-1009N08I-N 4T 1U S-1009N08I-M5T 1U S-1009N08I-I4T1U
0.9 V ± 12 mV S-1009N09I-N 4T 1U S-1009N09I-M5T 1U S-1009N09I-I4T1U
1.0 V ± 12 mV S-1009N10I-N 4T 1U S-1009N10I-M5T 1U S-1009N10I-I4T1U
1.1 V ± 12 mV S-1009N11I-N 4T 1U S-1009N11I-M5T 1U S-1009N11I-I4T1U
1.2 V ± 12 mV S-1009N12I-N 4T 1U S-1009N12I-M5T 1U S-1009N12I-I4T1U
1.3 V ± 12 mV S-1009N13I-N 4T 1U S-1009N13I-M5T 1U S-1009N13I-I4T1U
1.4 V ± 12 mV S-1009N14I-N 4T 1U S-1009N14I-M5T 1U S-1009N14I-I4T1U
1.5 V ± 12 mV S-1009N15I-N 4T 1U S-1009N15I-M5T 1U S-1009N15I-I4T1U
1.6 V ± 12 mV S-1009N16I-N 4T 1U S-1009N16I-M5T 1U S-1009N16I-I4T1U
1.7 V ± 12 mV S-1009N17I-N 4T 1U S-1009N17I-M5T 1U S-1009N17I-I4T1U
1.8 V ± 12 mV S-1009N18I-N 4T 1U S-1009N18I-M5T 1U S-1009N18I-I4T1U
1.9 V ± 12 mV S-1009N19I-N 4T 1U S-1009N19I-M5T 1U S-1009N19I-I4T1U
2.0 V ± 12 mV S-1009N20I-N 4T 1U S-1009N20I-M5T 1U S-1009N20I-I4T1U
2.1 V ± 12 mV S-1009N21I-N 4T 1U S-1009N21I-M5T 1U S-1009N21I-I4T1U
2.2 V ± 12 mV S-1009N22I-N 4T 1U S-1009N22I-M5T 1U S-1009N22I-I4T1U
2.3 V ± 12 mV S-1009N23I-N 4T 1U S-1009N23I-M5T 1U S-1009N23I-I4T1U
2.4 V ± 0.5% S-1009N24I-N 4T 1U S-1009N24I-M5T 1U S-1009N24I-I4T1U
2.5 V ± 0.5% S-1009N25I-N 4T 1U S-1009N25I-M5T 1U S-1009N25I-I4T1U
2.6 V ± 0.5% S-1009N26I-N 4T 1U S-1009N26I-M5T 1U S-1009N26I-I4T1U
2.7 V ± 0.5% S-1009N27I-N 4T 1U S-1009N27I-M5T 1U S-1009N27I-I4T1U
2.8 V ± 0.5% S-1009N28I-N 4T 1U S-1009N28I-M5T 1U S-1009N28I-I4T1U
2.9 V ± 0.5% S-1009N29I-N 4T 1U S-1009N29I-M5T 1U S-1009N29I-I4T1U
3.0 V ± 0.5% S-1009N30I-N 4T 1U S-1009N30I-M5T 1U S-1009N30I-I4T1U
3.1 V ± 0.5% S-1009N31I-N 4T 1U S-1009N31I-M5T 1U S-1009N31I-I4T1U
3.2 V ± 0.5% S-1009N32I-N 4T 1U S-1009N32I-M5T 1U S-1009N32I-I4T1U
3.3 V ± 0.5% S-1009N33I-N 4T 1U S-1009N33I-M5T 1U S-1009N33I-I4T1U
3.4 V ± 0.5% S-1009N34I-N 4T 1U S-1009N34I-M5T 1U S-1009N34I-I4T1U
3.5 V ± 0.5% S-1009N35I-N 4T 1U S-1009N35I-M5T 1U S-1009N35I-I4T1U
3.6 V ± 0.5% S-1009N36I-N 4T 1U S-1009N36I-M5T 1U S-1009N36I-I4T1U
3.7 V ± 0.5% S-1009N37I-N 4T 1U S-1009N37I-M5T 1U S-1009N37I-I4T1U
3.8 V ± 0.5% S-1009N38I-N 4T 1U S-1009N38I-M5T 1U S-1009N38I-I4T1U
3.9 V ± 0.5% S-1009N39I-N 4T 1U S-1009N39I-M5T 1U S-1009N39I-I4T1U
4.0 V ± 0.5% S-1009N40I-N 4T 1U S-1009N40I-M5T 1U S-1009N40I-I4T1U
4.1 V ± 0.5% S-1009N41I-N 4T 1U S-1009N41I-M5T 1U S-1009N41I-I4T1U
4.2 V ± 0.5% S-1009N42I-N 4T 1U S-1009N42I-M5T 1U S-1009N42I-I4T1U
4.3 V ± 0.5% S-1009N43I-N 4T 1U S-1009N43I-M5T 1U S-1009N43I-I4T1U
4.4 V ± 0.5% S-1009N44I-N 4T 1U S-1009N44I-M5T 1U S-1009N44I-I4T1U
4.5 V ± 0.5% S-1009N45I-N 4T 1U S-1009N45I-M5T 1U S-1009N45I-I4T1U
4.6 V ± 0.5% S-1009N46I-N 4T 1U S-1009N46I-M5T 1U S-1009N46I-I4T1U
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 5
3. 2 CMOS output products
Table 2
Detection volta ge SC-82AB SOT-23-5 SNT-4A
0.8 V ± 12 mV S-1009C08I- N 4T 1U S-1009C08I-M5T 1U S-1009C08I-I4T 1U
0.9 V ± 12 mV S-1009C09I- N 4T 1U S-1009C09I-M5T 1U S-1009C09I-I4T 1U
1.0 V ± 12 mV S-1009C10I- N 4T 1U S-1009C10I-M5T 1U S-1009C10I-I4T 1U
1.1 V ± 12 mV S-1009C11I- N 4T 1U S-1009C11I-M5T 1U S-1009C11I-I4T 1U
1.2 V ± 12 mV S-1009C12I- N 4T 1U S-1009C12I-M5T 1U S-1009C12I-I4T 1U
1.3 V ± 12 mV S-1009C13I- N 4T 1U S-1009C13I-M5T 1U S-1009C13I-I4T 1U
1.4 V ± 12 mV S-1009C14I- N 4T 1U S-1009C14I-M5T 1U S-1009C14I-I4T 1U
1.5 V ± 12 mV S-1009C15I- N 4T 1U S-1009C15I-M5T 1U S-1009C15I-I4T 1U
1.6 V ± 12 mV S-1009C16I- N 4T 1U S-1009C16I-M5T 1U S-1009C16I-I4T 1U
1.7 V ± 12 mV S-1009C17I- N 4T 1U S-1009C17I-M5T 1U S-1009C17I-I4T 1U
1.8 V ± 12 mV S-1009C18I- N 4T 1U S-1009C18I-M5T 1U S-1009C18I-I4T 1U
1.9 V ± 12 mV S-1009C19I- N 4T 1U S-1009C19I-M5T 1U S-1009C19I-I4T 1U
2.0 V ± 12 mV S-1009C20I- N 4T 1U S-1009C20I-M5T 1U S-1009C20I-I4T 1U
2.1 V ± 12 mV S-1009C21I- N 4T 1U S-1009C21I-M5T 1U S-1009C21I-I4T 1U
2.2 V ± 12 mV S-1009C22I- N 4T 1U S-1009C22I-M5T 1U S-1009C22I-I4T 1U
2.3 V ± 12 mV S-1009C23I- N 4T 1U S-1009C23I-M5T 1U S-1009C23I-I4T 1U
2.4 V ± 0.5% S-1009C24I - N4T1U S-1009C24I-M5T1U S-1009C24I-I4T1U
2.5 V ± 0.5% S-1009C25I - N4T1U S-1009C25I-M5T1U S-1009C25I-I4T1U
2.6 V ± 0.5% S-1009C26I - N4T1U S-1009C26I-M5T1U S-1009C26I-I4T1U
2.7 V ± 0.5% S-1009C27I - N4T1U S-1009C27I-M5T1U S-1009C27I-I4T1U
2.8 V ± 0.5% S-1009C28I - N4T1U S-1009C28I-M5T1U S-1009C28I-I4T1U
2.9 V ± 0.5% S-1009C29I - N4T1U S-1009C29I-M5T1U S-1009C29I-I4T1U
3.0 V ± 0.5% S-1009C30I - N4T1U S-1009C30I-M5T1U S-1009C30I-I4T1U
3.1 V ± 0.5% S-1009C31I - N4T1U S-1009C31I-M5T1U S-1009C31I-I4T1U
3.2 V ± 0.5% S-1009C32I - N4T1U S-1009C32I-M5T1U S-1009C32I-I4T1U
3.3 V ± 0.5% S-1009C33I - N4T1U S-1009C33I-M5T1U S-1009C33I-I4T1U
3.4 V ± 0.5% S-1009C34I - N4T1U S-1009C34I-M5T1U S-1009C34I-I4T1U
3.5 V ± 0.5% S-1009C35I - N4T1U S-1009C35I-M5T1U S-1009C35I-I4T1U
3.6 V ± 0.5% S-1009C36I - N4T1U S-1009C36I-M5T1U S-1009C36I-I4T1U
3.7 V ± 0.5% S-1009C37I - N4T1U S-1009C37I-M5T1U S-1009C37I-I4T1U
3.8 V ± 0.5% S-1009C38I - N4T1U S-1009C38I-M5T1U S-1009C38I-I4T1U
3.9 V ± 0.5% S-1009C39I - N4T1U S-1009C39I-M5T1U S-1009C39I-I4T1U
4.0 V ± 0.5% S-1009C40I - N4T1U S-1009C40I-M5T1U S-1009C40I-I4T1U
4.1 V ± 0.5% S-1009C41I - N4T1U S-1009C41I-M5T1U S-1009C41I-I4T1U
4.2 V ± 0.5% S-1009C42I - N4T1U S-1009C42I-M5T1U S-1009C42I-I4T1U
4.3 V ± 0.5% S-1009C43I - N4T1U S-1009C43I-M5T1U S-1009C43I-I4T1U
4.4 V ± 0.5% S-1009C44I - N4T1U S-1009C44I-M5T1U S-1009C44I-I4T1U
4.5 V ± 0.5% S-1009C45I - N4T1U S-1009C45I-M5T1U S-1009C45I-I4T1U
4.6 V ± 0.5% S-1009C46I - N4T1U S-1009C46I-M5T1U S-1009C46I-I4T1U
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
6
Pin Configurations
1. SC-82AB
Table 3
Pin No. Symbol Description
1 VSS GND pin
2 VDD Input voltage p in
3 CD Connection pi n for del ay cap ac itor
4 OUT Voltage detecti on out put p in
4 3
1 2
SC-82AB
Top view
Figure 3
2. SOT-23-5
Table 4
Pin No. Symbol Description
1 OUT Voltage detecti on out put p in
2 VDD Input voltage p in
3 VSS GND pin
4
NC*1 No connection
5 CD Connection pi n for del ay cap ac itor
*1. The NC pin is electr ical l y open.
The NC pin can be c onn ecte d t o VDD or VSS.
5 4
1 3 2
SOT-23-5
Top view
Figure 4
3. SNT-4A
Table 5
Pin No. Symbol Description
1 VSS GND pin
2 OUT Voltage detecti on out put p in
3 CD Connection pi n for del ay cap ac itor
4 VDD Input voltage p in
SNT-4A
Top view
1 4
2 3
Figure 5
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 7
Absolute Maximum Ratings
Table 6
(Ta = +25°C unless other wise specifie d)
Item Symbol Absolute Maximum Rating Unit
Power supply voltage VDDVSS 12 V
CD pin input volt a ge VCD V
SS0.3 to VDD + 0.3 V
Nch open drain output products VSS0.3 to 12.0 V
Output voltage CMOS outp ut prod ucts VOUT VSS0.3 to VDD + 0.3 V
Output current IOUT 50 mA
SC-82AB 350*1 mW
SOT-23-5 600*1 mW
Power dissipation SNT-4A PD 300*1 mW
Operating ambient tem peratu re Topr 40 to +85 °C
Storage temperat ure Tstg 40 to +125 °C
*1. When mounted on bo ar d
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
0 50 100 150
0
Power Dissipation (PD) [mW]
Ambient Temperature (Ta) [°C]
200
100
300
500
700
SOT-23-5
SC-82AB
400
600
SNT-4A
Figure 6 Power Dissip atio n o f Packag e (W hen moun ted o n bo ard )
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
8
Electrical Characteristics
1. Nch open drain output products
Table 7 (Ta = +25°C unless otherwise specified)
Item Symbol Conditions Min. Typ. Max. Unit
Test
Circuit
0.8 V VDET < 2.4 V VDET(S)
0.012 VDET(S) VDET(S)
+ 0.012 V 1
Detection volta ge*1 VDET 2.4 V VDET 4.6 V VDET(S)
× 0.995 VDET(S) VDET(S)
× 1.005 V 1
Hysteresis width VHYS VDET
× 0.04 VDET
× 0.05 VDET
× 0.06 V 1
0.8 V VDET < 1.2 V 0.30 0.90 μA 2
1.2 V VDET < 2.3 V 0.27 0.90 μA 2
2.3 V VDET < 3.6 V 0.42 0.90 μA 2
Current
consumption ISS V
DD = +VDET + 0.6 V
3.6 V VDET 4.6 V 0.39 0.90 μA 2
Operating volt age VDD 0.7 10.0 V 1
VDD = 0.7 V
S-1009N08 to 14 0.14 0.40 mA 3
VDD = 1.2 V
S-1009N15 to 46 0.73 1.33 mA 3
Output current IOUT Output trans ist or,
Nch,
VDS = 0.5 V VDD = 2.4 V
S-1009N27 to 46 1.47 2.39 mA 3
Leakage curre nt ILEAK Output tr ansistor, Nch,
VDD = 10.0 V, VOUT = 10.0 V 0.08 μA 3
Delay time tD C
D = 4.7 nF 22.1 26.0 29.9 ms 4
0.8 V VDET < 0.9 V ±180 ±430 ppm/°C 1
0.9 V VDET < 1.2 V ±120 ±370 ppm/°C 1
Detection volta ge
temperature
coefficient*2
Δ−VDET
ΔTa VDET Ta = 40°C to +85°C 1.2 V VDET 4. 6 V ±100 ±350 ppm/°C 1
*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the detection
voltage range i n Table 1.)
*2. The temperatu re cha nge of th e dete ct io n volt age [mV/ °C] is calcu late d b y usin g the f oll o wing eq uat ion.
Δ VDET
ΔTa []
mV/°C *1 = VDET(S)(typ.)[]
V*2 × Δ VDET
ΔTa VDET []
ppm/°C *3 ÷ 1000
*1. Temperature c hange o f the det ecti on volta ge
*2. Specified d etect i on v olta ge
*3. Detection voltag e tem perature coeffi cient
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 9
2. CMOS output products
Table 8 (Ta = +25°C unless otherwise specified)
Item Symbol Conditions Min. Typ. Max. Unit
Test
Circuit
0.8 V VDET < 2.4 V VDET(S)
0.012 VDET(S) VDET(S)
+ 0.012 V 1
Detection volta ge*1 VDET 2.4 V VDET 4.6 V VDET(S)
× 0.995 VDET(S) VDET(S)
× 1.005 V 1
Hysteresis width VHYS VDET
× 0.04 VDET
× 0.05 VDET
× 0.06 V 1
0.8 V VDET < 1.2 V 0.30 0.90 μA 2
1.2 V VDET < 2.3 V 0.27 0.90 μA 2
2.3 V VDET < 3.6 V 0.42 0.90 μA 2
Current
consumption ISS V
DD = +VDET + 0.6 V
3.6 V VDET 4.6 V 0.39 0.90 μA 2
Operating volt age VDD 0.6 10.0 V 1
VDD = 0.7 V
S-1009C08 to 14 0.14 0.40 mA 3
VDD = 1.2 V
S-1009C15 to 46 0.73 1.33 mA 3
Output transist or,
Nch,
VDS = 0.5 V VDD = 2.4 V
S-1009C27 to 46 1.47 2.39 mA 3
VDD = 4.8 V
S-1009C08 to 39 1.62 2.60 mA 5
Output current IOUT
Output transist or,
Pch,
VDS = 0.5 V VDD = 6.0 V
S-1009C40 to 46 1.78 2.86 mA 5
Delay time tD C
D = 4.7 nF 22.1 26.0 29.9 ms 4
0.8 V VDET < 0.9 V ±180 ±430 ppm/°C 1
0.9 V VDET < 1.2 V ±120 ±370 ppm/°C 1
Detection volta ge
temperature
coefficient*2
Δ−VDET
ΔTa VDET Ta = 40°C to +85°C 1.2 V VDET 4. 6 V ±100 ±350 ppm/°C 1
*1. VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the detection
voltage range i n Table 2.)
*2. The temperatu re cha nge of th e dete ct io n volt age [mV/ °C] is calcu late d b y usin g the f oll o wing eq uat ion.
Δ VDET
ΔTa []
mV/°C *1 = VDET(S)(typ.)[]
V*2 × Δ VDET
ΔTa VDET []
ppm/°C *3 ÷ 1000
*1. Temperature c hange o f the det ecti on volta ge
*2. Specified d etect i on v olta ge
*3. Detection voltag e tem perature coeffi cient
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
10
Test Circuits
1.
S-1009
Series
VDD
VDD
VSS
OUT
R*1
100 kΩ
V
V
CD
2.
S-1009
Series
VDD OUT
A
VDD
VSS CD
*1. R is unnecessary for CM OS out put pr o ducts .
Figure 7 Figure 8
3.
VDS
VDD OUT AV
V
VDD
VSS CD
S-1009
Series
4.
S-1009
Series
VDD
VSS
OUT
R*1
100 kΩ
CD
Oscilloscope
P.G.
*1. R is unnecessary for CM OS out put pr oduct s. *1. R is unnecessar y for CM OS out put pr o duct s.
Figure 9 Figure 10
5.
VDD
VDS
OUT AV
V
VDD
VSS CD
S-1009
Series
Figure 11
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 11
Timing Chart
1. Nch open drain output products
V
OUT
VDD
VSS
R
100 kΩ
Release voltage (+VDET)
Detection voltage (VDET)
VDD
VSS
Minimum operating voltage
Hysteresis width
(VHYS)
VDD
VSS
CD
Output from the OUT pin
tD
Figure 12
2. CMOS output products
tD
V
VDD
VSS
Release voltage (+VDET)
Detection voltage (VDET)
VDD
VSS
Minimum operating voltage
Hysteresis width
(VHYS)
Output from the OUT pin
VSS
VDD
OUT CD
Remark When VDD is the min imum operati ng voltage or les s, the ou tput voltag e from the OUT pin is indefi nite
in the shaded area.
Figure 13
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
12
Operation
1. Basic operation: CMOS output (Active “L”)
(1) When the power supply voltage (VDD) is the release voltage (+VDET) or more, the Nch transistor is OFF and
the Pch transis tor is ON to ou tput VDD (“H”). Since the Nch transist or N1 in Figure 14 is OFF, the comp arator
input voltage is (RB + RC ) VDD
RA + RB + RC .
(2) Although VDD decreases to +VDET or less, the output is VDD when VDD is the detection voltage ( VDET) or more.
When VDD decreases to VDET or less (A in Figure 15), the Nch transistor is ON and the Pch transistor is
OFF so that VSS is output. The Nch transistor N1 in Figure 14 is turned on, and the input voltage to the
comparator is RB VDD
RA + RB .
(3) The output is indefinite by decreasing VDD to the IC’s minimum operating voltage or less. If the output is
pulled up, it will be VDD.
(4) VSS is output by increasing VDD to t he minimum operatin g voltage or more. Alth ough VDD exceeds VDET and
VDD is less than +VDET, the output is VSS.
(5) When increasing VDD to +VDET or more (B in Figure 15), the Nch transistor is OFF and the Pch transistor is
ON so that VDD is output. VDD output to the O UT pin del a ys i n tD by the delay circuit.
VSS
*1
*1
V
REF
+
OUT
VDD
CD
Delay
circuit
*1
*1
C
D
Pch
Nch
N1
R
C
R
A
R
B
*1. Parasiteic dio de
Figure 14 Operation 1
Hysteresis width
(V
HYS
) ABV
DD
V
SS
Minimum operating voltage
Output from OUT pin
V
DD
V
SS
(1) (2) (3) (5) (4)
Release voltage (+V
DET
)
Detection voltage (V
DET
)
t
D
Figure 15 Operation 2
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 13
2. Delay Circuit
The delay circuit delays the output signal to the OUT pin from the time at which the power voltage (VDD) exceeds
the release voltage (+VDET) when VDD is turned on. The output signal is not delayed when VDD decreases to the
detection volt a ge (VDET) or less (Refer to Figure 15).
The delay time (tD) is determined by the time constant of the built-in constant current (approx. 100 nA) and the
attached exter nal capacitor (CD), or the d elay time (tD0) when the CD pin is open, and calculat ed from the follo wing
equation.
tD [ms] = Delay coefficient × CD [nF] + tD0 [ms]
Delay coefficient (+85°C) : Min. 2.82, Typ. 4. 20, Max. 5. 72
Delay coefficient (+25°C) : Min. 4.70, Typ. 5. 47, Max. 6. 24
Delay coefficient (40°C) : Min. 5.64, Typ. 8. 40, Max. 1 2.01
t
D0 (40°C to +85°C) : Min. 0.01 ms, T yp. 0.10 ms, Ma x. 0.24 ms
When the CD value is sufficiently large, the tD0 value can be disreg ard ed.
Caution 1. When the CD pin is open, a double pulse shown in Figure 16 may appear at release.
To avoid the double pulse, attach 100 pF or larger capacitor to the CD pin. Do not apply
voltage to the CD pi n fro m the exteri or.
VOUT
Time
Figure 16
2. Print circuit board layout should be made in such a way that no current flows into or flows
from the CD pin since the impedance of the CD pin is high, otherwise correct delay time
cannot be provided.
3. There is no limit for the capacitance of the external capacitor (CD) as long as the leakage
current of the capacitor can be ignored against the built-in constant current value. Leakage
current causes deviation in delay time. When the leakage current is larger than the built-in
constant curr ent, no releas e tak es pl ac e.
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
14
3. Other characteristics
3. 1 T emp er ature ch ara ct eri stic s of detecti on voltag e
The shaded area in Figure 17 shows the temperature characteristics of the detection voltage in the operating
temperature r a nge.
40 25
+0.945 mV/°C
V
DET
[V]
85 Ta [°C]
0.945 mV/°C
V
DET25*1
*1. VDET25 is an actu al det ect ion vo lta ge v alu e at +25°C.
Figure 17 Temperature ch ara cte risti cs o f detecti on volt age (Exam pl e for VDET = 2.7 V)
3. 2 T emp er atu re ch ara ct eristi c s of release voltag e
The temperature change Δ + VDET
ΔTa of the release voltage is calculated by using the temperature change
Δ VDET
ΔTa of the detect ion vo lt age as follows:
Δ + VDET
ΔTa = +VDET
VDET × Δ VDET
ΔTa
The temperatur e chang e of th e rel eas e volt a ge a nd t he detection volt ag e has th e same sign c ons eq uent l y.
3. 3 T emp er atu re ch ara ct eristi c s of h yster esi s voltage
The temperat ure change of the h ysteresis volta ge is expressed as Δ + VDET
ΔTa Δ VDET
ΔTa and is calculated as
follows:
Δ + VDET
ΔTa Δ VDET
ΔTa = VHYS
VDET × Δ VDET
ΔTa
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 15
Standard Circuit
VDD
OUT
VSS
R*1
100 kΩ
CD*2
CD
*1. R is unnecessary for CM OS out put pr oduct s.
*2. The delay capacit or (CD) shou ld be co n necte d dir ect l y t o the CD p in and to t h e VS S pin.
Figure 18
Caution The abo ve co n necti on di agram and co nstan t w ill no t guaran tee su c cessfu l op erati on .
Perform thorough evaluation using the actual application to set the constant.
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
16
Explanation of Terms
1. Detection voltage (VDET), release voltage (+VDET)
The detection voltage (VDET) is a voltage at which the output turns to “L”. The detection voltage varies slightly
among products of the same specification. The variation of detection voltage between the specified minimum
(VDET) Min. and the m axim u m (VDET) Max. is called the d etect ion vo ltag e ran ge (Ref er to Figure 19).
Example: In the S-1009C15, t h e det ec t ion vo lt age is eit h er one in t h e range of 1. 4 88 (VDET) 1.512.
This means that some S-100 9C15s h ave VDET = 1.488 V and some h av e VDET = 1.512 V.
The release voltage is a voltage at which the output turns to “H”. The release voltage varies slightly among
products of the same specification. The variation of release voltages between the specified minimum (+VDET) Min.
and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure 20). The range is calculated
from the actual det ecti on vo lt age (VDET) of a product a nd i s in t he rang e of VDET × 1.04 +VDET VDET × 1. 06.
Example: F or the S-1 00 9 C15, t he rel ea se volt age is ei t her on e in t he range of 1. 548 (+VDET) 1.602.
This means that some S-100 9C15s h ave +VDET = 1.548 V and some h av e +VDET = 1.602 V.
Detect i on volta g e
Detect i on volta g e
range
V
DD
(V
DET
) Min.
(V
DET
) Max.
OUT
Release voltage
Release
voltage range
V
DD
(+V
DET
) Min.
(+V
DET
) Max.
OUT
Delay time
Figure 19 Detection voltage (CMOS output products) Figure 20 Release voltage (CMOS output products)
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 17
2. Hysteresis width (VHYS)
The hysteresis width is t he vo ltag e dif fer enc e between the det ecti on v olt age a nd t he rel e ase vo ltag e (T he volt ag e a t
point B The voltage at point A = VHYS in Figure 15). Setting the hysteresis width between the detection voltage
and the releas e volt age, pr ev ent s malf unct i on ca used b y noise on the input voltage.
3. Delay Time (tD)
The delay time in the S-1009 Serie s is a period from t he input volt age to the VDD pin e xceeding the re lease voltage
(+VDET) until the out put from t he OUT pin inv erts. T he dela y t ime chang es accor ding t o th e exter nal c ap acitor (CD).
t
D
V
DD
OUT
V
+V
DET
Figure 21 Delay time
4. Through-type current
Through-type current is a current that flows instantaneously at the time of detection and release of a voltage
detector. T he through-type current is l arge in CMOS out put prod ucts, smal l in Nc h op en dr ain outp ut pro duct s.
5. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 22), taking a CMOS active “L”
product for example, the through-type current which is generated when the output goes from “L” to “H” (release)
causes a voltage drop equal to [through-type current] × [input resistance] across the resistor. When the input
voltage drops below the detect ion voltage (VDET) as a result, the o utput voltage goes t o low level. In this st ate, the
through-type current stops and its resultant voltage drop disappears, and the output goes from “L” to “H”. The
through-type current is then generated again, a voltage drop appears, and repeating the process finally induces
oscillation.
OUT
VSS
VDD
R
B
R
A
V
IN
S-1009C
Figure 22 An example for bad i mpl emen tatio n d ue to detecti on voltage ch ang e
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
18
Precautions
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circ uit.
In CMOS output products of the S-1009 Series, the through-type current flows at the detection and the release. If
the input impedance is high, oscillation may occur due to the voltage drop by the through-type current during
releasing.
In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the power
supply voltage (VDD) is sl o w near the det ec ti on vo ltag e.
When designing for mass production using an application circuit described herein, the product deviation and
temperature characteristics of the external parts should be taken into consideration. SII shall not bear any
responsibilit y for pat ent infr in gement s rel ate d to pro ducts using t h e circ uit s descri bed he rein.
SII claims no responsibility for any disputes arising out of or in connection with any infringement by products
including this I C of pate nt s o wned b y a th ir d part y.
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 19
Characteristics (Typical Data)
1. Detection voltage (VDET) vs. temperature (Ta)
S-1009N08
0.90
0.85
0.80
0.75
0.70
VDET [V]
Ta [°C]
40 85
25 250 7550
+VDET
VDET
S-1009N11
1.20
1.15
1.10
1.05
1.00
VDET [V]
Ta [°C]
40 85
25 250 7550
+VDET
VDET
S-1009N12
40
V
DET
[V]
1.00
Ta [°C]
1.40
1.10
1.20
1.30
85
25 250 7550
+V
DET
V
DET
S-1009N46
40
V
DET
[V]
4.20
Ta [°C]
5.00
4.40
4.60
4.80
85
25 250 7550
+V
DET
V
DET
2. Hysteresis voltage width (VHYS) vs. temperature (Ta)
S-1009N08
8
3
40 Ta [°C]
7
6
5
4
V
HYS
[%]
40 85
25 250 7550
S-1009N11
8
3
40 Ta [°C]
7
6
5
4
V
HYS
[%]
40 85
25 250 7550
S-1009N12
40
V
HYS
[%]
3
Ta [°C]
8
4
5
6
7
85
25 250 7550
S-1009N46
40
V
HYS
[%]
3
Ta [°C]
8
4
5
6
7
85
25 250 7550
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
20
3. Current consumption (ISS) vs. input voltage (VDD)
S-1009C08 Ta = +25°C
1.50
1.25
1.00
0.75
0.50
0.25
00246810
I
SS
[μA]
V
DD
[V]
S-1009C11 Ta = +25°C
1.00
00246810
I
SS
[μA]
V
DD
[V]
0.75
0.50
0.25
S-1009C12 Ta = +25°C
0
I
SS
[μA]
0
V
DD
[V]
1.0
0.50
0.25
0.75
104628
S-1009C46 Ta = +25°C
0
I
SS
[μA]
0
V
DD
[V]
1.0
0.50
0.25
0.75
104628
4.
Current consumption (I
SS
) vs. temperature (Ta)
S-1009N08 VDD = +VDET + 0.6 V
1.00
0.75
0.50
0.25
0
Ta [°C]
I
SS
[μA]
40 85
25 250 7550
S-1009N11 VDD = +VDET + 0.6 V
1.00
0.75
0.50
0.25
0
Ta [°C]
I
SS
[μA]
40 85
25 250 7550
S-1009N12 VDD = +VDET + 0.6 V
40
ISS [μA]
0
Ta [°C]
1.00
0.25
0.50
0.75
85
25 250 7550
S-1009N46 VDD = +VDET + 0.6 V
40
ISS [μA]
0
Ta [°C]
1.00
0.25
0.50
0.75
85
25 250 7550
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 21
5. Nch transistor output current (IOUT)
vs.
VDS 6. Pch transistor output current (IOUT)
vs.
VDS
S-1009N46 Ta = +25°C
0
IOUT [mA]
0
VDS [V]
15.0
5.0
2.5
10.0
7.5
12.5
4.01.0 1.50.5 3.0 3.52.52.0
VDD = 3.6 V
2.4 V
1.2 V
1.0 V
S-1009C08 Ta = +25°C
0
IOUT [mA]
0
VDS [V]
40.0
10.0
30.0
20.0
10.04.02.0 8.06.0
VDD = 8.4 V
7.2 V
6.0 V
4.8 V
3.6 V
2.4 V
1.2 V
7. Nch transistor output current (IOUT)
vs.
input voltage (VDD) 8. Pch transistor output current (IOUT)
vs.
input voltage (VDD)
S-1009N46 VDS = 0.5 V
0
IOUT [mA]
0
VDD [V]
4.0
1.0
3.0
2.0
6.03.02.01.0 5.04.0
Ta = 40°C
+25°C
+85°C
S-1009C08 VDS = 0.5 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
00246810
V
DD
[V]
I
OUT
[mA]
Ta = 40°C
+25°C
+85°C
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
22
9. Minimum operating voltage
vs.
input voltage (VDD)
S-1009N08 Pull-up to VDD
Pull-up resistance: 100 kΩ
1.2
1.0
0.8
0.6
0.4
0.2
00 0.2 0.4 0.6 0.8 1.0
VDD [V]
VOUT [V]
Ta = 40°C
+25°C
+85°C
S-1009N11 Pull-up to VDD
Pull-up resistance: 100 kΩ
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00 0.2 0.4 0.6 0.8 1.0 1.2
VDD [V]
VOUT [V]
Ta = 40°C
+25°C
+85°C
S-1009N12 Pull-up to VDD
Pull-up resistance: 100 kΩ
0
VOUT [V]
0
VDD [V]
1.6
0.4
1.2
0.8
1.40.80.60.40.2 1.21.0
Ta = 40°C
+25°C
+85°C
S-1009N46 Pull-up to VDD
Pull-up resistance: 100 kΩ
0
V
OUT
[V]
0
V
DD
[V]
6.0
1.0
3.0
2.0
4.0
5.0
5.04.03.02.01.0
Ta = 40°C
+25°C
+85°C
S-1009N08 Pull-up to 10 V
Pull-up resistance: 100 kΩ
12.0
10.0
8.0
6.0
4.0
2.0
00 0.2 0.4 0.6 0.8 1.0
VDD [V]
VOUT [V]
Ta = 40°C
+25°C
+85°C
S-1009N11 Pull-up to 10 V
Pull-up resistance: 100 kΩ
12.0
00 0.2 0.4 0.6 0.8 1.0 1.2
VDD [V]
VOUT [V]
10.0
8.0
6.0
4.0
2.0
Ta = 40°C
+25°C
+85°C
S-1009N12 Pull-up to 10 V
Pull-up resistance: 100 kΩ
0
V
OUT
[V]
0
V
DD
[V]
12.0
2.0
8.0
6.0
10.0
4.0
1.40.80.60.40.2 1.21.0
Ta = 40°C
+25°C
+85°C
S-1009N46 Pull-up to 10 V
Pull-up resistance: 100 kΩ
0
VOUT [V]
0
VDD [V]
12.0
2.0
6.0
4.0
8.0
10.0
5.04.03.02.01.0
Ta = 40°C
+25°C
+85°C
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 23
10. Dynamic response
vs.
COUT (CD pin; open)
S-1009C08
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
1
0.01
0.1
0.10.0001 0.010.001
tPLH
tPHL
S-1009N08
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
10
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009C11
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
1
0.01
0.1
0.10.0001 0.010.001
tPLH
tPHL
S-1009N11
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
10
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009C12
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
1
0.01
0.1
0.10.0001 0.010.001
tPLH
tPHL
S-1009N12
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
10
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009C46
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
1
0.01
0.1
0.10.0001 0.010.001
tPLH
tPHL
S-1009N46
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
10
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
24
VIH
*1
Output voltage
Input voltage
VIL
*
2
VDD tPHL tPLH
1 μs
1 μs
VDD × 10%
VDD × 90%
*1. VIH = 10 V
*2. VIL = 0.7 V
OUT
VSS
VDD
S-1009
Series
V
R
*1
100 kΩ
C
OUT
V
DD
V
CD
*1. R is unnecessary for CM OS out put pr oduct s.
Figure 24 Measurement Circuit for Response Time
Figure 23 Measurement Condition for Response Time
Caution The abo ve con necti o n d iagram an d co nstan t w il l no t gu arante e suc c essful op er atio n.
Perform thorough evaluation using the actual application to set the constant.
11. Delay Time
vs.
CD Pin Capacitance (CD) (No output pin capacitance)
S-1009N08 Ta = +25°C
0.1
t
D
[ms]
0.1
1
C
D
[nF]
10000
10
1000
100
10001 10010
S-1009N11 Ta = +25°C
0.1
tD [ms]
0.1
1
CD [nF]
10000
10
1000
100
10001 10010
S-1009N12 Ta = +25°C
0.1
tD [ms]
CD [nF] 10001 10010
0.1
1
10000
10
1000
100
S-1009N46 Ta = +25°C
0.1
t
D
[ms]
C
D
[nF] 10001 10010
0.1
1
10000
10
1000
100
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 25
12. Delay Time
vs.
Temperature (Ta)
S-1009N08 CD = 4. 7 nF
50
0
Ta [°C]
40
30
20
10
t
D
[ms]
40 85
25 250 7550
S-1009N11 CD = 4. 7 nF
50
0
Ta [°C]
40
30
20
10
t
D
[ms]
40 85
25 250 7550
S-1009N12 CD = 4. 7 nF
40
t
D
[ms]
0
Ta [°C]
50
20
10
30
40
85
25 250 7550
S-1009N46 CD = 4. 7 nF
40
t
D
[ms]
0
Ta [°C]
50
20
10
30
40
85
25 250 7550
1 μs
tD
VDD × 90%
Input voltage
Output voltage
VIL*2
VSS
VIH*1
*1. VIH = 10 V
*2. VIL = 0.7 V
OUT
VSS
VDD
S-1009
Series
V
R
*1
100 kΩ
V
DD
V
CD
*1. R is unnecessary for CM OS out put pr oduct s.
Figure 26 Measuremen t ci rcu it fo r dela y ti me
Figure 25 Measu rement condition for delay time
Caution The abo ve con necti o n d iagram an d co nstan t w il l no t gu arante e suc c essful op er atio n.
Perform thorough evaluation using the actual application to set the constant.
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
26
Application Circuit Examples
1. Microcomputer reset circuits
In microcomputers, when the po wer supply voltage is lower than the guaranteed operating voltage, an unspecified
operation may be performed or the contents of the memory register may be lost. When power supply voltage
returns to the normal level, the microcomputer needs to be initialized. Otherwise, the S-1009 Series may
malfunction aft er that .
Reset circuits t o prot ec t micro comp uter in t h e event of current being mom entarily switch ed of f or l owered.
Using the S-1009 Series which has the low operating voltage, a high accuracy detection voltage and hysteresis,
reset circuits c an b e eas ily c o nst ruct e d as s een in Figure 27 and 28.
VSS
VDD
Microcomputer
S-1009C
VSS
(Only for Nch open dr ain out put pro ducts)
VDD1 VDD2
Microcomputer
S-1009N
Figure 27 Example of rese t circu it (S-10 09C) Figure 28 Example o f re set ci rcui t (S-1009N)
Caution The abo ve con necti o n d iagram an d co nstan t w il l no t gu arante e suc c essful op er atio n.
Perform thorough evaluation using the actual application to set the constant.
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 27
2. Power-on reset circuit
A power-on reset circuit c an be co nst ruct ed usin g the S-1009 Series (Nc h op en dr ai n o utput pr od ucts onl y).
(Nch open drain output product)
OUT
VIN
VSS
VDD
S-1009N
RA*1
C
Di*2
(RA 100 kΩ)
R
100 kΩ
*1. R should be 100 kΩ or l ess t o prev ent osc il l at ion.
*2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the po wer falling, Di can be
removed when the delay of the falling time is not important.
Figure 29
VDD
[V]
t [s]
OUT
[V]
t [s]
Figure 30
Remark When the power rises s harply, the output may instantaneously be set to the “H” level due to the IC’s
indefinite ar ea (the output volt age is indefinit e when it is the IC’s minimu m operating voltag e or less),
as seen in Figure 31.
VDD
[V]
t [s]
OUT
[V]
t [s]
Figure 31
Caution 1. The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
2. Note that the h ysteresis wi dth may be larger as the follow ing equation shows w hen using the
above connection. Perform thorough evaluation using the actual application to set the
constant.
Maximum h ysteresis width = VHYS + RA 20 μA
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
28
3. Change of detection voltage
In the Nch open drain out put product s of S-100 9 Series, u sers do n ot need a sp ecific v alue of det ect ion volt age, the
detection volt a ge can be c ha nge d by u sin g a resistance divider or a d iod e, as seen in F i g ure 32 a nd 33.
In Figure 32, hysteresis width also chan ges.
(Nch open drain
ouput product)
R
A*1
OUT
VIN
VSS
VDD
S-1009N
R
B
(R
A
100 kΩ)
R
100 kΩ
Detection volt age = RA + RB
RB VDET
Hysteresis width = RA + RB
RB VHYS
(Nch open drain
output product)
V
f1
OUT
VIN
VSS
VDD
S-1009N
R
100 kΩ
Detection volt age = Vf1 + (VDET)
*1. RA should be 100 kΩ or l ess to prev ent oscil lat i on.
Caution If RA and RB are large, the hysteresis width
may also be larger than the value given by
the above equation due to the through-type
current (which flows slightly in an Nch open
drain product).
Figure 33
Figure 32
Caution 1. The abo ve connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
2. Note that the h ysteresis wi dth may be larger as the follow ing equation shows w hen using the
above connections. Perform thorough evaluation using the actual application to set the
constant.
Maximum h ysteresis width = RA + RB
RB VHYS + RA 20 μA
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 29
Marking Specifications
1. SC-82AB
(1) to (3) : Product code (refer to Product name vs. Product code)
4 3
1 2
SC-82AB
Top view
(1) (2) (3)
Product name vs. Product code
1. 1 Nch open drain output products 1. 2 CMOS o utput products
Product Code Product Code
Product Name (1) (2) (3) Product Name (1) (2) (3)
S-1009N08I-N4T1U T 8 A S-1009C08I-N4T1U T 6 A
S-1009N09I-N4T1U T 8 B S-1009C09I-N4T1U T 6 B
S-1009N10I-N4T1U T 8 C S-1009C10I-N4T1U T 6 C
S-1009N11I-N4T1U T 8 D S-1009C11I-N4T1U T 6 D
S-1009N12I-N4T1U T 8 E S-1009C12I-N4T1U T 6 E
S-1009N13I-N4T1U T 8 F S-1009C13I-N4T1U T 6 F
S-1009N14I-N4T1U T 8 G S-1009C14I-N4T1U T 6 G
S-1009N15I-N4T1U T 8 H S-1009C15I-N4T1U T 6 H
S-1009N16I-N4T1U T 8 I S-1009C16I-N4T1U T 6 I
S-1009N17I-N4T1U T 8 J S-1009C17I-N4T1U T 6 J
S-1009N18I-N4T1U T 8 K S-1009C18I-N4T1U T 6 K
S-1009N19I-N4T1U T 8 L S-1009C19I-N4T1U T 6 L
S-1009N20I-N4T1U T 8 M S-1009C20I-N4T1U T 6 M
S-1009N21I-N4T1U T 8 N S-1009C21I-N4T1U T 6 N
S-1009N22I-N4T1U T 8 O S-1009C22I-N4T1U T 6 O
S-1009N23I-N4T1U T 8 P S-1009C23I-N4T1U T 6 P
S-1009N24I-N4T1U T 8 Q S-1009C24I-N4T1U T 6 Q
S-1009N25I-N4T1U T 8 R S-1009C25I-N4T1U T 6 R
S-1009N26I-N4T1U T 8 S S-1009C26I-N4T1U T 6 S
S-1009N27I-N4T1U T 8 T S-1009C27I-N4T1U T 6 T
S-1009N28I-N4T1U T 8 U S-1009C28I-N4T1U T 6 U
S-1009N29I-N4T1U T 8 V S-1009C29I-N4T1U T 6 V
S-1009N30I-N4T1U T 8 W S-1009C30I-N4T1U T 6 W
S-1009N31I-N4T1U T 8 X S-1009C31I-N4T1U T 6 X
S-1009N32I-N4T1U T 8 Y S-1009C32I-N4T1U T 6 Y
S-1009N33I-N4T1U T 8 Z S-1009C33I-N4T1U T 6 Z
S-1009N34I-N4T1U T 9 A S-1009C34I-N4T1U T 7 A
S-1009N35I-N4T1U T 9 B S-1009C35I-N4T1U T 7 B
S-1009N36I-N4T1U T 9 C S-1009C36I-N4T1U T 7 C
S-1009N37I-N4T1U T 9 D S-1009C37I-N4T1U T 7 D
S-1009N38I-N4T1U T 9 E S-1009C38I-N4T1U T 7 E
S-1009N39I-N4T1U T 9 F S-1009C39I-N4T1U T 7 F
S-1009N40I-N4T1U T 9 G S-1009C40I-N4T1U T 7 G
S-1009N41I-N4T1U T 9 H S-1009C41I-N4T1U T 7 H
S-1009N42I-N4T1U T 9 I S-1009C42I-N4T1U T 7 I
S-1009N43I-N4T1U T 9 J S-1009C43I-N4T1U T 7 J
S-1009N44I-N4T1U T 9 K S-1009C44I-N4T1U T 7 K
S-1009N45I-N4T1U T 9 L S-1009C45I-N4T1U T 7 L
S-1009N46I-N4T1U T 9 M S-1009C46I-N4T1U T 7 M
Remark Please contact our sales off ice for prod uc t s with specifications ot her th an t he above.
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
S-1009 Series Rev.5.0_01
Seiko Instruments Inc.
30
2. SOT-23-5
(1) to (3) : Product code (refer to Product name vs. Product code)
(4) : Lot number
5 4
1 3
2
(1) (2) (3) (4)
SOT-23-5
To
p
vie
w
Product name vs. Product code
2. 1 Nch open drain output products 2. 2 CMOS output products
Product Code Product Code
Product Name (1) (2) (3) Product Name (1) (2) (3)
S-1009N08I-M5T1U T 8 A S-1009C08I-M5T1U T 6 A
S-1009N09I-M5T1U T 8 B S-1009C09I-M5T1U T 6 B
S-1009N10I-M5T1U T 8 C S-1009C10I-M5T1U T 6 C
S-1009N11I-M5T1U T 8 D S-1009C11I-M5T1U T 6 D
S-1009N12I-M5T1U T 8 E S-1009C12I-M5T1U T 6 E
S-1009N13I-M5T1U T 8 F S-1009C13I-M5T1U T 6 F
S-1009N14I-M5T1U T 8 G S-1009C14I-M5T1U T 6 G
S-1009N15I-M5T1U T 8 H S-1009C15I-M5T1U T 6 H
S-1009N16I-M5T1U T 8 I S-1009C16I-M5T1U T 6 I
S-1009N17I-M5T1U T 8 J S-1009C17I-M5T1U T 6 J
S-1009N18I-M5T1U T 8 K S-1009C18I-M5T1U T 6 K
S-1009N19I-M5T1U T 8 L S-1009C19I-M5T1U T 6 L
S-1009N20I-M5T1U T 8 M S-1009C20I-M5T1U T 6 M
S-1009N21I-M5T1U T 8 N S-1009C21I-M5T1U T 6 N
S-1009N22I-M5T1U T 8 O S-1009C22I-M5T1U T 6 O
S-1009N23I-M5T1U T 8 P S-1009C23I-M5T1U T 6 P
S-1009N24I-M5T1U T 8 Q S-1009C24I-M5T1U T 6 Q
S-1009N25I-M5T1U T 8 R S-1009C25I-M5T1U T 6 R
S-1009N26I-M5T1U T 8 S S-1009C26I-M5T1U T 6 S
S-1009N27I-M5T1U T 8 T S-1009C27I-M5T1U T 6 T
S-1009N28I-M5T1U T 8 U S-1009C28I-M5T1U T 6 U
S-1009N29I-M5T1U T 8 V S-1009C29I-M5T1U T 6 V
S-1009N30I-M5T1U T 8 W S-1009C30I-M5T1U T 6 W
S-1009N31I-M5T1U T 8 X S-1009C31I-M5T1U T 6 X
S-1009N32I-M5T1U T 8 Y S-1009C32I-M5T1U T 6 Y
S-1009N33I-M5T1U T 8 Z S-1009C33I-M5T1U T 6 Z
S-1009N34I-M5T1U T 9 A S-1009C34I-M5T1U T 7 A
S-1009N35I-M5T1U T 9 B S-1009C35I-M5T1U T 7 B
S-1009N36I-M5T1U T 9 C S-1009C36I-M5T1U T 7 C
S-1009N37I-M5T1U T 9 D S-1009C37I-M5T1U T 7 D
S-1009N38I-M5T1U T 9 E S-1009C38I-M5T1U T 7 E
S-1009N39I-M5T1U T 9 F S-1009C39I-M5T1U T 7 F
S-1009N40I-M5T1U T 9 G S-1009C40I-M5T1U T 7 G
S-1009N41I-M5T1U T 9 H S-1009C41I-M5T1U T 7 H
S-1009N42I-M5T1U T 9 I S-1009C42I-M5T1U T 7 I
S-1009N43I-M5T1U T 9 J S-1009C43I-M5T1U T 7 J
S-1009N44I-M5T1U T 9 K S-1009C44I-M5T1U T 7 K
S-1009N45I-M5T1U T 9 L S-1009C45I-M5T1U T 7 L
S-1009N46I-M5T1U T 9 M S-1009C46I-M5T1U T 7 M
Remark Please contact our sales off ice for prod uc t s with specifications ot her th an t he above.
SUPER-LOW CURRENT CONSUMPTIO N SUPER HIG H- ACC URACY VOLTAGE DE TECTO R WITH DELAY CIR C UIT (EXTERNAL D ELAY TIME SETTING)
Rev.5.0_01 S-1009 Series
Seiko Instruments Inc. 31
3. SNT-4A
(1) to (3) : Product code (refer to Product name vs. Product code)
1
SNT-4A
To
p
view
(1) (2) (3)
2
4
3
Product name vs. Product code
3. 1 Nch open drain output products 3. 2 CMOS output products
Product Code Product Code
Product Name (1) (2) (3) Product Name (1) (2) (3)
S-1009N08I-I4T1U T 8 A S-1009C08I-I4T1U T 6 A
S-1009N09I-I4T1U T 8 B S-1009C09I-I4T1U T 6 B
S-1009N10I-I4T1U T 8 C S-1009C10I-I4T1U T 6 C
S-1009N11I-I4T1U T 8 D S-1009C11I-I4T1U T 6 D
S-1009N12I-I4T1U T 8 E S-1009C12I-I4T1U T 6 E
S-1009N13I-I4T1U T 8 F S-1009C13I-I4T1U T 6 F
S-1009N14I-I4T1U T 8 G S-1009C14I-I4T1U T 6 G
S-1009N15I-I4T1U T 8 H S-1009C15I-I4T1U T 6 H
S-1009N16I-I4T1U T 8 I S-1009C16I-I4T1U T 6 I
S-1009N17I-I4T1U T 8 J S-1009C17I-I4T1U T 6 J
S-1009N18I-I4T1U T 8 K S-1009C18I-I4T1U T 6 K
S-1009N19I-I4T1U T 8 L S-1009C19I-I4T1U T 6 L
S-1009N20I-I4T1U T 8 M S-1009C20I-I4T1U T 6 M
S-1009N21I-I4T1U T 8 N S-1009C21I-I4T1U T 6 N
S-1009N22I-I4T1U T 8 O S-1009C22I-I4T1U T 6 O
S-1009N23I-I4T1U T 8 P S-1009C23I-I4T1U T 6 P
S-1009N24I-I4T1U T 8 Q S-1009C24I-I4T1U T 6 Q
S-1009N25I-I4T1U T 8 R S-1009C25I-I4T1U T 6 R
S-1009N26I-I4T1U T 8 S S-1009C26I-I4T1U T 6 S
S-1009N27I-I4T1U T 8 T S-1009C27I-I4T1U T 6 T
S-1009N28I-I4T1U T 8 U S-1009C28I-I4T1U T 6 U
S-1009N29I-I4T1U T 8 V S-1009C29I-I4T1U T 6 V
S-1009N30I-I4T1U T 8 W S-1009C30I-I4T1U T 6 W
S-1009N31I-I4T1U T 8 X S-1009C31I-I4T1U T 6 X
S-1009N32I-I4T1U T 8 Y S-1009C32I-I4T1U T 6 Y
S-1009N33I-I4T1U T 8 Z S-1009C33I-I4T1U T 6 Z
S-1009N34I-I4T1U T 9 A S-1009C34I-I4T1U T 7 A
S-1009N35I-I4T1U T 9 B S-1009C35I-I4T1U T 7 B
S-1009N36I-I4T1U T 9 C S-1009C36I-I4T1U T 7 C
S-1009N37I-I4T1U T 9 D S-1009C37I-I4T1U T 7 D
S-1009N38I-I4T1U T 9 E S-1009C38I-I4T1U T 7 E
S-1009N39I-I4T1U T 9 F S-1009C39I-I4T1U T 7 F
S-1009N40I-I4T1U T 9 G S-1009C40I-I4T1U T 7 G
S-1009N41I-I4T1U T 9 H S-1009C41I-I4T1U T 7 H
S-1009N42I-I4T1U T 9 I S-1009C42I-I4T1U T 7 I
S-1009N43I-I4T1U T 9 J S-1009C43I-I4T1U T 7 J
S-1009N44I-I4T1U T 9 K S-1009C44I-I4T1U T 7 K
S-1009N45I-I4T1U T 9 L S-1009C45I-I4T1U T 7 L
S-1009N46I-I4T1U T 9 M S-1009C46I-I4T1U T 7 M
Remark Please contact our sales off ice for prod uc t s with specificat ions other th an above.
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
0.3 +0.1
-0.05
0.4 +0.1
-0.05
0.05
12
43
0.16+0.1
-0.06
1.3±0.2
2.0±0.2
No. NP004-A-P-SD-1.1
SC82AB-A-PKG Dimensions
NP004-A-P-SD-1.1
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
1.1±0.1
0.2±0.05
4.0±0.1
2.0±0.05
4.0±0.1
2.2±0.2
(0.7)
No. NP004-A-C-SD-3.0
NP004-A-C-SD-3.0
SC82AB-A-Carrier Tape
Feed direction
12
34
ø1.05±0.1
ø1.5 +0.1
-0
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
No. NP004-A-C-S1-2.0
NP004-A-C-S1-2.0
SC82AB-A-Carrier Tape
4.0±0.1 2.0±0.1
4.0±0.1 ø1.05±0.1
0.2±0.05
1.1±0.1
Feed direction
2.3±0.15
12
34
ø1.5 +0.1
-0
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
QTY. 3,000
(60°)
(60°)
ø13±0.2
12.5max.
9.0±0.3
No. NP004-A-R-SD-1.1
NP004-A-R-SD-1.1
SC82AB-A-Reel
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
2.9±0.2
1.9±0.2
0.95±0.1
0.4±0.1
0.16 +0.1
-0.06
123
4
5
No. MP005-A-P-SD-1.2
MP005-A-P-SD-1.2
SOT235-A-PKG Dimensions
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1
1.4±0.2
0.25±0.1
3.2±0.2
123
45
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 3,000
No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
1.2±0.04
0.65
0.2±0.05
0.48±0.02
0.08
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-4.0
No. PF004-A-P-SD-4.0
+0.05
-0.02
12
3
4
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PF004-A-C-SD-1.0
SNT-4A-A-Carrier Tape
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.45±0.1 0.65±0.05
0.25±0.05
1
2
34
No. PF004-A-C-SD-1.0
+0.1
-0
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 5,000
No. PF004-A-R-SD-1.0
PF004-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-Reel
No.
TITLE
SCALE
UNIT mm
SNT-4A-A-Land Recommendation
Seiko Instruments Inc.
PF004-A-L-SD-3.0
No. PF004-A-L-SD-3.0
0.3
0.35
0.3
0.52
1.16
0.52
Caution Making the wire pattern under the package is possible. However, note that the package
may be upraised due to the thickness made by the silk screen printing and of a solder
resist on the pattern because this package does not have the standoff.
www.sii-ic.com
The information described herein is subject to change without notice.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the approp riate governmental authority.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permissi on of Seiko Instruments Inc. is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicle s, without prior written permission of Seiko Instrum ents Inc.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or comm unity damage that may ensue.