T4-LDS-0223-1, Rev. 1 (120178) ©2011 Microsemi Corporation Page 1 of 5
2N2857UB
Available on
commercial
versions
RF and MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Qualified per MIL-PRF-19500/343
Quali f i ed Levels:
JAN, JAN TX,
and JANTXV
DESCRIPTION
The 2N2857UB i s a military qualifi ed s ilic on NPN tran s is tor (al so available i n c om m er cial
version), desi gned for UHF equipment and other high-reliability application s . Common
applications include low noise amplifier; osc illator, and mixer app lic ations. Mic rosemi also
of fers numerous oth er products to meet higher and lower p ower voltage r egulat ion
applications.
UB Package
Also available in:
TO-72 Package
(axial-leaded)
2N2857
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent to JEDEC registered 2N2857.
• Silicon NPN, UB packaged UHF transistor.
• Maximum unilateral gain = 13 dB (typ) @ 500 MHz.
• JAN, JANTX, and JANTXV military qualified versi ons available per MIL-PRF-19500/343.
• RoHS compliant version available (commercial grade only).
APPLICATIONS / BENE FITS
• Low-power, ultra-high frequency transistor.
• Low-profi le cera mic sur face mount pa ckag e.
MAXIMUM RATIN GS @ T
A
= +25 oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Busi ness Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Collector-Emitter Voltage
VCEO
15
V
Collector-Bas e Voltage
VCBO
30
V
Emitter-Base Voltage
VEBO
3
V
Thermal Resistance J unction-to-Ambient
RӨJA
400
oC/W
Thermal Resistance J unction-to-Solder Pad
RӨJSP
210
oC/W
Steady-State Power Dissipation (1)
PD
200
mW
Collector Current
IC
40
mA
Notes: 1. Derate linearly 1.14 mW/°C for TA > +25 °C.
T4-LDS-0223-1, Rev. 1 (120178) ©2011 Microsemi Corporation Page 2 of 5
2N2857UB
• CASE: Ceramic.
• TERMINALS: Gold plating over nickel underplate. RoHS c ompliant matte/tin available on commercial grade only.
• MARKING: Part number, date code, manufacturer’s ID.
• TAPE & REEL opti on: Standard per EIA-418D. Consult factory for quantities.
• WEIGHT: < 0.04 Grams.
• See Package Dimensions on last page.
JAN 2N2857 UB (e3)
Reliability Level
JAN=JAN level
JANTX=JAN level
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount package
SYMBOLS & DEFINIT IONS
Symbol
Definition
IC
Collector current (dc).
IB
Base cur rent ( dc).
TA
Ambient or free air temperature.
TC
Case temperature.
VCB
Collector to base voltage (dc).
VEB
Emitter to base vol tage (dc).
T4-LDS-0223-1, Rev. 1 (120178) ©2011 Microsemi Corporation Page 3 of 5
2N2857UB
TC
C
OFF CHARACTERISTICS
Test Conditions Symbol
Value
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(IC = 3.0 mA, Bias condition D) V(BR)CEO
15
-
-
V
Collector to Em itte r Cutoff Current
(VCE = 16 V, Bias condition C) ICES
-
-
100
nA
Emitter to Base Cutoff Current
(VEB = 3 V, B ias condi tion D) IEBO
-
-
10
µA
Collector to Base Cutoff Current
(VCB = 15 V, Bias condition D) ICBO
-
-
10
nA
ON CHARACTERISTICS
Test Conditions Symbol
Value
Min.
Typ.
Max.
Unit
Forward Current transfer ratio
(IC = 3.0 mA, VCE = 1.0 V) hFE 30 - 150
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA) VCE(sat) - 0.4 V
Base-Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA) VBE(sat) - 1.0 V
DYNAMIC CHARACTERISTICS
Test Conditions
Symbol
Value
Unit
Min.
Typ.
Max.
Magnitude of common em itter small signal short
circuit forward current transfer ratio
(VCE = 6 V, Ic = 5 mA, f = 100 MHz) |hfe| 10 - 21
Collector-base time constant
(IE = 2.0 mA, VCB = 6.0 V, f = 31.9 MHz) rb’Cc 4 - 15 pF
Collec tor to Base – feedbac k capacitance
(IE = 0 mA, VCB = 10 V, 100 kHz < f < 1 MHz Ccb 1.0
pF
Noise Figure (50 Ohms)
(IC = 1.5 mA, VCE = 6 V, f = 450 MHz, Rg = 50 Ω) F
4.5
dB
Small Signal Power Gain (common emitter)
(IE = 1.5 mA, VCE = 6 V, f = 450 MHz Gpe 12.5 21
dB
T4-LDS-0223-1, Rev. 1 (120178) ©2011 Microsemi Corporation Page 4 of 5
2N2857UB
Time (sec)
FIGURE 1
Max imum Th ermal Imp edan ce
Theta (oCW)
T4-LDS-0223-1, Rev. 1 (120178) ©2011 Microsemi Corporation Page 5 of 5
2N2857UB
Symbol
Dimensions
Note Symbol
Dimensions
Note
inch
millimeters
inch
millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
.046
.056
1.17
1.42
LS1
.035
.039
0.89
1.02
BL
.115
.128
2.92
3.25
LS2
.071
.079
1.80
2.01
BW
.085
.108
2.16
2.74
LW
0.16
0.24
0.41
0.61
CL
.128
3.25
r
.008
0.20
CW
.108
2.74
r1
.012
0.31
LL1
.022
.038
0.56
0.97
r2
.022
.056
LL2
.017
.035
0.43
0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.