DATA SH EET
Product specification
Supersedes data of April 1992 1996 Jun 19
DISCRETE SEMICONDUCTORS
1N5059 to 1N5062
Controlled avalanche rectifiers
handbook, 2 columns
M3D116
1996 Jun 19 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy
absorption capability
•Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
1N5059 −200 V
1N5060 −400 V
1N5061 −600 V
1N5062 −800 V
VRWM crest working reverse voltage
1N5059 −200 V
1N5060 −400 V
1N5061 −600 V
1N5062 −800 V
VRcontinuous reverse voltage
1N5059 −200 V
1N5060 −400 V
1N5061 −600 V
1N5062 −800 V
IF(AV) average forward current Ttp =45°C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
−2.0 A
Tamb =80°C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
−0.8 A
IFSM non-repetitive peak forward current t = 10 ms half sinewave −50 A
ERSM non-repetitive peak reverse avalanche
energy L = 120 mH; Tj=T
j max prior to
surge; inductive load switched off −20 mJ
Tstg storage temperature −65 +175 °C
Tjjunction temperature see Fig.5 −65 +175 °C
1996 Jun 19 3
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”
.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF=1A; T
j=T
j max; see Fig.6 −−0.8 V
IF= 1 A; see Fig.6 −−1.0 V
V(BR)R reverse avalanche
breakdown voltage IR= 0.1 mA
1N5059 225 −−V
1N5060 450 −−V
1N5061 650 −−V
1N5062 900 −−V
I
Rreverse current VR=V
RRMmax; see Fig.7 −−1µA
V
R
=V
RRMmax; Tj= 165 °C; see Fig.7 −−150 µA
trr reverse recovery time when switched from IF=0.5AtoI
R=1A;
measured at IR= 0.25 A; see Fig.10 −3−µs
Cddiode capacitance VR= 0 V; f = 1 MHz; see Fig.8 −50 −pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
1996 Jun 19 4
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
GRAPHICAL DATA
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
a = 1.57; VR=V
RRMmax;δ= 0.5.
Lead length 10 mm.
handbook, halfpage
3
2
1
0
MBG044
0 40 20080 120 160
Ttp (°C)
IF(AV)
(A)
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
a = 1.57; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig.9.
handbook, halfpage
0
IF(AV)
(A)
40 200
1.6
1.2
0.4
0
0.8
80 120 160
Tamb (°C)
MBG054
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
handbook, halfpage
0123
4
3
1
0
2
MGC745
2
P
(W)
IF(AV) (A)
1.42
2.5
a = 3
1.57
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0 1200
0
MBH388
100
200
800400 VR (V)
Tj
(°C)
60 6159 62
1996 Jun 19 5
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
Solid line: Tj=25°C.
Dotted line: Tj= 175 °C.
Fig.6 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
0
15
IF
10
5
012
MGC735
VF (V)
(A)
Fig.7 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
103
10
(µA)
IR
2
10
1
10−12000
MGC734
40 80 120 160
Tj (oC)
max
VR=V
RRMmax.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
102
MBG031
101
1
102
10
Cd
(pF)
VR (V)
Fig.9 Device mounted on a printed-circuit board.
handbook, halfpage
MGA200
3
2
7
50
25
50
Dimensions in mm.
1996 Jun 19 6
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
Fig.10 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
1996 Jun 19 7
Philips Semiconductors Product specification
Controlled avalanche rectifiers 1N5059 to 1N5062
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Dimensions in mm.
Fig.11 SOD57.
handbook, full pagewidth
,
,
,
3.81
max
MBC880
ka
28 min28 min 4.57
max
0.81
max
