D2 PA K PSMN1R1-40BS N-channel 40 V 1.3 m standard level MOSFET in D2PAK Rev. 2 -- 29 February 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK (SOT404) package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.3 Applications DC-to-DC convertors Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj 25 C; Tj 175 C - - 40 V ID drain current Tmb = 25 C; VGS = 10 V; see Figure 1 - - 120 A Ptot total power dissipation Tmb = 25 C; see Figure 2 - - 306 W Tj junction temperature -55 - 175 C VGS = 10 V; ID = 25 A; Tj = 100 C; see Figure 12;see Figure 13 - 1.68 2 m VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 13 - 1.16 1.3 m [1] Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge VGS = 10 V; ID = 75 A; VDS = 20 V; see Figure 14;see Figure 15 - 32 - nC - 136 - nC - - 1.4 J Avalanche ruggedness EDS(AL)S [1] non-repetitive drain-source avalanche energy Continuous current is limited by package VGS = 10 V; Tj(init) = 25 C; ID = 120 A; Vsup 40 V; unclamped; RGS = 50 ; tp = 0.1 ms PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain[1] 3 S source mb D drain Simplified outline Graphic symbol mb D G S mbb076 2 1 3 SOT404 (D2PAK) [1] It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number PSMN1R1-40BS Package Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj 25 C; Tj 175 C - 40 V VDGR drain-gate voltage Tj 25 C; Tj 175 C; RGS = 20 k - 40 V VGS gate-source voltage ID drain current -20 20 V VGS = 10 V; Tmb = 100 C [1] - 120 A VGS = 10 V; Tmb = 25 C; see Figure 1 [1] - 120 A - 1320 A IDM peak drain current pulsed; tp 10 s; Tmb = 25 C; see Figure 3 Ptot total power dissipation Tmb = 25 C; see Figure 2 - 306 W Tstg storage temperature -55 175 C Tj junction temperature -55 175 C Tsld(M) peak soldering temperature - 260 C - 120 A Source-drain diode [1] IS source current Tmb = 25 C ISM peak source current pulsed; tp 10 s; Tmb = 25 C - 1320 A VGS = 10 V; Tj(init) = 25 C; ID = 120 A; Vsup 40 V; unclamped; RGS = 50 ; tp = 0.1 ms - 1.4 All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2012. All rights reserved. Avalanche ruggedness EDS(AL)S [1] non-repetitive drain-source avalanche energy J Continuous current is limited by package. PSMN1R1-40BS Product data sheet Rev. 2 -- 29 February 2012 2 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 003a a f329 350 ID (A) 300 03aa16 120 Pder (%) 250 80 200 150 40 (1) 100 50 0 0 0 Fig 1. 50 100 150 200 Tmb (C) Normalized continuous drain current as a function of mounting base temperature 0 50 100 150 200 Tmb (C) Fig 2. Normalized total power dissipation as a function of mounting base temperature 003a a f328 104 ID (A) 103 tp =10 s Limit R DS on = VDS / ID 100 s 102 DC 10 1 ms 10 ms 100 ms 1 10-1 10-1 Fig 3. 1 10 102 V DS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN1R1-40BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 3 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 0.22 0.49 K/W Rth(j-a) thermal resistance from junction to ambient minimum footprint; mounted on a printed-circuit board - 50 - K/W 003aag770 1 Zth(j-mb) (K/W) 10-1 = 0.5 0.2 0.1 0.05 = 0.02 10-2 tp T P single shot t tp T -3 10 10-6 Fig 4. 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN1R1-40BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 4 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 A; VGS = 0 V; Tj = -55 C 36 - - V ID = 250 A; VGS = 0 V; Tj = 25 C 40 - - V ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 10 - - 4.6 V ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 10 1 - - V ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 11;see Figure 10 2 3 4 V VDS = 40 V; VGS = 0 V; Tj = 25 C - 0.02 10 A VDS = 40 V; VGS = 0 V; Tj = 175 C - - 500 A VGS = 20 V; VDS = 0 V; Tj = 25 C - 10 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 C - 10 100 nA VGS = 10 V; ID = 25 A; Tj = 100 C; see Figure 12;see Figure 13 - 1.68 2 m VGS = 10 V; ID = 25 A; Tj = 175 C; see Figure 12;see Figure 13 - 2.3 2.8 m VGS = 10 V; ID = 25 A; Tj = 25 C; see Figure 13 - 1.16 1.3 m - 1.1 - Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage IDSS drain leakage current IGSS gate leakage current RDSon RG drain-source on-state resistance internal gate resistance f = 1 MHz (AC) Dynamic characteristics QG(tot) total gate charge ID = 0 A; VDS = 0 V; VGS = 10 V - 133 - nC - 136 - nC QGS gate-source charge ID = 75 A; VDS = 20 V; VGS = 10 V; see Figure 14;see Figure 15 - 52 - nC QGS(th) pre-threshold gate-source charge - 30 - nC QGS(th-pl) post-threshold gate-source charge - 22 - nC QGD gate-drain charge - 32 - nC VGS(pl) gate-source plateau voltage ID = 75 A; VDS = 20 V;see Figure 14; see Figure 15 - 6.1 - V Ciss input capacitance - 9710 - pF Coss output capacitance VDS = 20 V; VGS = 0 V; f = 1 MHz; Tj = 25 C;see Figure 16 - 2042 - pF Crss reverse transfer capacitance - 994 - pF td(on) turn-on delay time - 45 - ns tr rise time - 66 - ns td(off) turn-off delay time - 111 - ns tf fall time - 53 - ns PSMN1R1-40BS Product data sheet VDS = 20 V; RL = 0.8 ; VGS = 5 V; RG(ext) = 4.7 All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 5 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK Table 6. Characteristics ...continued Symbol Parameter Conditions Min Typ Max Unit - 0.8 1.2 V - 64 - ns - 117 - nC Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 C; see Figure 17 trr reverse recovery time Qr recovered charge IS = 25 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 20 V 003aaf316 200 003aaf317 75 ID (A) 60 gfs (S) 150 45 100 30 Tj = 175 C 50 15 0 0 0 Fig 5. Tj = 25 C 15 30 45 ID (A) 0 60 Forward transconductance as a function of drain current; typical values Fig 6. 003aaf320 18000 C (pF) 4 VGS (V) 6 Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aag669 8 RDSon (m) Ciss 14000 2 6 10000 4 Crss 6000 2 2000 1 Fig 7. 10 VGS (V) Input and reverse transfer capacitances as a function of gate-source voltage; typical values PSMN1R1-40BS Product data sheet 0 102 4 Fig 8. 8 12 16 VGS (V) 20 Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 6 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 003aaf319 80 10 ID (A) 6.0 5.2 5.0 003aad280 5 VGS (V) = 4.8 VGS(th) (V) 4 max 60 4.7 3 typ 4.6 40 2 min 20 1 4.5 0 0 Fig 9. 0.25 0.5 0 -60 0.75 V (V) 1 DS Output characteristics: drain current as a function of drain-source voltage; typical values 03aa35 10-1 ID (A) 0 60 120 180 Tj (C) Fig 10. Gate-source threshold voltage as a function of junction temperature 003a a f322 2.5 a min 10-2 typ max 2 10-3 1.5 10-4 1 10-5 0.5 10-6 0 2 4 6 0 -60 VGS (V) Fig 11. Sub-threshold drain current as a function of gate-source voltage PSMN1R1-40BS Product data sheet 0 60 120 Tj (C) 180 Fig 12. Normalized drain-source on state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 7 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 003aag670 8 RDSon (m) 4.6 4.8 VDS 6 ID VGS(pl) VGS (V) = 5 4 VGS(th) 5.2 VGS 2 QGS1 10 QGS2 QGS 20 QGD QG(tot) 0 0 20 40 60 ID (A) Fig 13. Drain-source on-state resistance as a function of drain current; typical values 003aaf323 10 VGS (V) 003aaa508 80 Fig 14. Gate charge waveform definitions 003aaf324 105 C (pF) 20V 8 104 VDS = 8V Ciss 32V 6 Coss 103 Crss 4 102 2 0 0 40 80 120 Q (nC)160 G Fig 15. Gate-source voltage as a function of gate charge; typical values PSMN1R1-40BS Product data sheet 10 10-1 1 10 VDS (V) 102 Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 8 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 003aaf325 75 IS (A) 60 45 30 15 Tj = 175 C Tj = 25 C 0 0 0.25 0.5 0.75 VSD (V) 1 Fig 17. Source current as a function of source-drain voltage; typical values PSMN1R1-40BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 9 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 SOT404 Fig 18. Package outline SOT404 (D2PAK) PSMN1R1-40BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 10 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes PSMN1R1-40BS v.2 20120229 Product data sheet - PSMN1R1-40BS v.1 - - Modifications: PSMN1R1-40BS v.1 PSMN1R1-40BS Product data sheet * * Status changed from objective to product. Various changes to content. 20110929 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 11 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 9. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,IC-buslogo,ICODE,I-CODE,ITEC,Labelution ,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE-- are trademarks of NXP B.V. HD RadioandHD Radiologo -- are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com PSMN1R1-40BS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 -- 29 February 2012 (c) NXP B.V. 2012. All rights reserved. 13 of 14 PSMN1R1-40BS NXP Semiconductors N-channel 40 V 1.3 m standard level MOSFET in D2PAK 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 February 2012 Document identifier: PSMN1R1-40BS Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: PSMN1R1-40BS,118