PD - 96117C IRF6715MPbF IRF6715MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS RDS(on) RDS(on) 25V max 20V max 1.3m@ 10V 2.1m@ 4.5V l Dual Sided Cooling Compatible Qg l Ultra Low Package Inductance l Optimized for High Frequency Switching Qgd Qgs2 Qrr Qoss Vgs(th) 12.0nC 5.3nC 37nC 26nC 1.9V tot 40nC l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested MX DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MX MQ MT MP Description The IRF6715MPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6715MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6715MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6715MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Max. Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g Typical RDS(on) (m) ID = 34A 3 2 T J = 125C 1 T J = 25C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance Vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com e e f h 4 Units 25 20 34 27 180 270 200 27 VGS, Gate-to-Source Voltage (V) VDS V A mJ A 14.0 ID= 27A 12.0 10.0 VDS= 20V VDS= 13V 8.0 6.0 4.0 2.0 0.0 0 20 40 60 80 100 120 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.56mH, RG = 25, IAS = 27A. 1 02/16/11 IRF6715MPbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Conditions Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 25 --- --- 17 --- --- Static Drain-to-Source On-Resistance --- --- 1.3 2.1 1.6 2.7 Gate Threshold Voltage Gate Threshold Voltage Coefficient 1.4 --- 1.9 -6.2 2.4 --- Drain-to-Source Leakage Current --- --- --- --- 1.0 150 Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage --- --- --- --- 100 -100 nA VDS = 20V, VGS = 0V, TJ = 125C VGS = 20V Forward Transconductance Total Gate Charge 135 --- --- 40 --- 59 S VGS = -20V VDS = 13V, ID = 27A Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge --- --- 12 5.3 --- --- Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- 12 11 --- --- Output Charge --- --- 17 26 --- --- Gate Resistance Turn-On Delay Time --- --- 1.1 20 2.0 --- Rise Time Turn-Off Delay Time --- --- 31 16 --- --- ns VDD = 13V, VGS = 4.5V ID = 27A Fall Time Input Capacitance --- --- 12 5340 --- --- Output Capacitance Reverse Transfer Capacitance --- --- 1280 600 --- --- pF See Fig. 17 VGS = 0V VDS = 13V Min. Typ. Max. Units V VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 34A VGS = 4.5V, ID i = 27A i V VDS = VGS, ID = 100A mV/C A VDS = 20V, VGS = 0V VDS = 13V nC VGS = 4.5V ID = 27A See Fig. 15 nC VDS = 16V, VGS = 0V i RG = 1.8 = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) --- ISM Pulsed Source Current (Body Diode) --- --- 270 VSD Diode Forward Voltage --- --- 1.0 V trr Reverse Recovery Time Reverse Recovery Charge --- --- 28 37 42 56 ns nC Qrr g --- 98 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 27A, VGS = 0V TJ = 25C, IF = 27A di/dt = 200A/s i i Notes: Pulse width 400s; duty cycle 2% 2 www.irf.com IRF6715MPbF Absolute Maximum Ratings e e f Max. Parameter Units 2.8 1.8 78 270 -40 to + 150 Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG W C Thermal Resistance Parameter el jl kl fl RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor e Typ. Max. Units --- 12.5 20 --- 1.0 45 --- --- 1.6 --- C/W 0.022 W/C 100 Thermal Response ( Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 J 0.1 0.01 0.001 1E-006 R1 R1 J 1 0.0001 0.001 0.01 R3 R3 1 2 2 3 i (sec) Ri (C/W) A Ci= i/Ri Ci= i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 R2 R2 A 3 2.773 24.841 0.00418 0.053914 17.387 8.86912 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling , mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized R is measured at TJ of approximately 90C. back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). www.irf.com Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF6715MPbF 1000 1000 100 10 BOTTOM 1 0.1 2.5V 0.01 60s PULSE WIDTH TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 100 BOTTOM 10 2.5V 1 60s PULSE WIDTH Tj = 25C Tj = 150C 0.1 0.001 0.1 1 10 100 0.1 1000 10 100 1000 Fig 5. Typical Output Characteristics 2.0 1000 ID = 34A VDS = 15V 60s PULSE WIDTH Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 T J = 150C T J = 25C 10 T J = -40C 1 1.5 V GS = 10V V GS = 4.5V 1.0 0.5 0.1 1 2 3 4 5 20 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd T J = 25C Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 8.0V Vgs = 10V 16 Typical RDS(on) ( m) C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 Fig 7. Normalized On-Resistance vs. Temperature Fig 6. Typical Transfer Characteristics 100000 -60 -40 -20 0 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V Crss 12 8 4 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 0 40 80 120 160 200 ID, Drain Current (A) Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage www.irf.com IRF6715MPbF 10000 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150C 100sec 100 T J = 25C T J = -40C 10 1 10 1msec 1 0.1 VGS = 0V DC TJ = 150C Single Pulse 0.01 0 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.10 Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 180 160 140 120 100 80 60 40 20 0 50 75 100 125 10.00 100.00 Fig11. Maximum Safe Operating Area 200 25 1.00 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) 3.0 2.5 2.0 1.5 ID = 100A ID = 250A ID = 1.0mA 1.0 ID = 1.0A 0.5 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( C ) T C , Case Temperature (C) Fig 13. Typical Threshold Voltage vs. Junction Temperature Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Pulse Avalanche Energy (mJ) ID, Drain Current (A) 10msec TA = 25C ID TOP 2.74A 3.70A BOTTOM 27A 800 700 600 500 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6715MPbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 15a. Gate Charge Test Circuit Qgd Qgs2 Qgs1 Fig 15b. Gate Charge Waveform V(BR)DSS 15V D.U.T V RGSG 20V DRIVER L VDS tp + - VDD IAS I AS 0.01 tp Fig 16b. Unclamped Inductive Waveforms Fig 16a. Unclamped Inductive Test Circuit V DS VGS RG A RD VDS 90% D.U.T. + - VDD V GS Pulse Width 1 s Duty Factor 0.1 % 10% VGS td(on) Fig 17a. Switching Time Test Circuit 6 tr t d(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRF6715MPbF Driver Gate Drive D.U.T + - - RG * * * * * *** D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D= Period P.W. + V DD ** + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel ISD *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs DirectFET Board Footprint, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D S G S D www.irf.com D 7 IRF6715MPbF DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE MIN MAX A 6.35 6.25 B 5.05 4.80 C 3.95 3.85 D 0.45 0.35 E 0.72 0.68 F 0.72 0.68 G 1.42 1.38 H 0.84 0.80 J 0.42 0.38 K 1.01 0.88 L 2.41 2.28 M 0.616 0.676 R 0.020 0.080 P 0.17 0.08 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.054 0.032 0.015 0.035 0.090 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.056 0.033 0.017 0.039 0.095 0.0274 0.0031 0.007 DirectFET Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" 8 www.irf.com IRF6715MPbF DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7" reel, order IRF6715MTR1PBF STANDARD OPTION METRIC CODE MIN MAX A N.C 330.0 B 20.2 N.C C 12.8 13.2 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIMENSIONS (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC MIN MIN MAX MAX MIN MAX 12.992 6.9 N.C N.C 177.77 N.C 0.795 0.75 N.C N.C 19.06 N.C 0.504 0.53 13.5 0.50 0.520 12.8 0.059 N.C 0.059 N.C 1.5 N.C 3.937 2.31 58.72 N.C N.C N.C N.C 0.53 N.C 0.724 N.C 13.50 0.488 0.47 11.9 N.C 0.567 12.01 0.469 0.47 11.9 0.606 12.01 N.C LOADED TAPE FEED DIRECTION NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 7.90 0.319 8.10 0.154 3.90 4.10 0.161 0.469 0.484 11.90 12.30 0.215 5.45 5.55 0.219 0.201 0.209 5.10 5.30 0.256 6.50 6.70 0.264 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60 Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/2011 www.irf.com 9